Optoelectronic component
The invention relates to an optoelectronic component, which, in at least one embodiment, comprises an optoelectronic semiconductor chip having an emission side and a conversion element on the emission side. The conversion element is configured for conversion of a primary beam emitted by the semiconductor chip in operation as intended. The conversion element is divided into at least one first layer and one second layer. The first layer is arranged between the second layer and the emission side. The first layer comprises a first matrix material having fluorescent particles introduced therein. The second layer comprises a second matrix material having fluorescent particles introduced therein. The first matrix material of the first layer has a higher index of refraction than the second matrix material of the second layer.
1. An optoelectronic component, comprising:
an optoelectronic semiconductor chip with an emission side;
a conversion element on the emission side, wherein
the conversion element is configured for converting a primary radiation emitted by the semiconductor chip in operation as intended,
the conversion element is divided into at least a first layer and a second layer,
the first layer is arranged between the second layer and the emission side,
the first layer comprises a first matrix material with phosphor incorporated therein,
the second layer comprises a second matrix material with phosphors incorporated therein, and
the first matrix material of the first layer has a higher refractive index than the second matrix material of the second layer.
2. The optoelectronic component as claimed in claim 1 , wherein the refractive index of the first matrix material is lower than a refractive index of the semiconductor material of the semiconductor chip.
3. The optoelectronic component as claimed in claim 1 , wherein
a radiation-permeable optical element is arranged on the conversion element,
a refractive index of the optical element is not higher than the refractive index of the second matrix material.
4. The optoelectronic component as claimed in claim 1 , wherein the first and/or the second matrix material is based on a silazane or siloxane or silicone.
5. The optoelectronic component as claimed in claim 1 , wherein
the first layer comprises phosphors of a first phosphor,
a refractive index difference between the first fluorescent and the first matrix material is no greater than 1.0.
6. The optoelectronic component as claimed in claim 1 , wherein the first layer and the second layer comprise phosphors particles from the same first phosphor.
7. The optoelectronic component as claimed in claim 1 , wherein the first layer and the second layer each comprise a mixture of phosphors of different phosphors, the mixtures of phosphors in the first layer and the second layer being equal within the production tolerances.
8. The optoelectronic component as claimed in claim 1 , wherein
the first layer comprises phosphors of a first phosphor,
the second layer comprises phosphors of a second phosphor,
the second phosphor is different from the first phosphor.
9. The optoelectronic component as claimed in claim 8 , wherein the first and the second phosphor are designed in such a way that during the conversion of the primary radiation emitted by the semiconductor chip in operation, the first phosphor causes a greater Stokes shift than the second phosphor.
10. The optoelectronic component as claimed in claim 8 , wherein the first phosphor has a higher refractive index than the second phosphor.
11. The optoelectronic component as claimed in claim 8 , wherein a refractive index difference between the first phosphor and the first matrix material is less than a refractive index difference between the first phosphor and the second matrix material.
12. The optoelectronic component as claimed in claim 8 , wherein
the first phosphor is a nitride-based fluorescent,
the second phosphor is a garnet-based fluorescent.
13. The optoelectronic component as claimed in claim 1 , wherein the first layer and/or the second layer have a thickness of at least half the wavelength of the primary radiation.
14. The optoelectronic component as claimed in claim 1 , wherein the first matrix material has a refractive index of at least 1.5.
15. The optoelectronic component as claimed in claim 1 , wherein
the semiconductor chip generates primary radiation in the blue spectral range and/or in the UV range in the intended operation,
in the intended operation the conversion element converts the primary radiation partially or completely into radiation in the green and/or red spectral range.
16. The optoelectronic component as claimed in claim 1 , wherein
the conversion element comprises at least one additional layer on one side of the second layer facing away from the semiconductor chip,
the additional layer comprises a matrix material with phosphors embedded therein,
the matrix material of the additional layer has a lower refractive index than the second matrix material of the second layer.
17. An optoelectronic component, comprising:
an optoelectronic semiconductor chip with an emission side;
a conversion element on the emission side, wherein
the conversion element is configured for converting a primary radiation emitted by the semiconductor chip in operation as intended,
the conversion element is divided into at least a first layer and a second layer,
the first layer is arranged between the second layer and the emission side,
the first layer comprises a first matrix material with phosphor particles incorporated therein,
the second layer comprises a second matrix material with phosphor particles incorporated therein,
the first matrix material of the first layer has a higher refractive index than the second matrix material of the second layer,
the maximum thickness of the first and second layer is 100 μm or 50 μm, and
the proportion by mass of phosphor particles in the first and second layer is at least 30%.