Semiconductor light receiving element and semiconductor relay
A semiconductor relay includes: a substrate; a semiconductor layer of a direct transition type which is on the substrate and which has semi-insulating properties; a p-type semiconductor layer on at least part of the semiconductor layer; a first electrode; and a second electrode. The first electrode is electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer. The second electrode is spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, and the first electrode includes a first opening part.
1. A semiconductor light receiving element, comprising:
a substrate;
a semiconductor layer of a direct transition type on the substrate, the semiconductor layer having semi-insulating properties;
a p-type semiconductor layer on at least part of the semiconductor layer;
a first electrode electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer; and
a second electrode spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, wherein
the first electrode includes a first opening part,
the p-type semiconductor layer includes a second opening part,
the second opening part includes a plurality of openings arranged side by side in a first direction,
each of the plurality of openings is elongated in shape and long in a second direction crossing the first direction,
an exposed part of the semiconductor layer exposed from the second opening part includes: a first region where the first electrode is provided on the exposed part; and a second region where the first electrode is not provided on the exposed part, and
the first region and the second region are located alternately in the first direction.
2. The semiconductor light receiving element according to claim 1 , wherein
the p-type semiconductor layer is exposed from the first opening part.
3. The semiconductor light receiving element according to claim 1 , wherein
the semiconductor layer is exposed from the first opening part.
4. The semiconductor light receiving element according to claim 1 , wherein
a border portion between the semiconductor layer and the p-type semiconductor layer is exposed from the first opening part.
5. The semiconductor light receiving element according to claim 1 , wherein
an active region of the semiconductor layer is rectangular.
6. The semiconductor light receiving element according to claim 1 , wherein
an active region of the semiconductor layer is circular.
7. The semiconductor light receiving element according to claim 1 , wherein
the second electrode is provided on a bottom surface of the substrate.
8. The semiconductor light receiving element according to claim 1 , wherein
the semiconductor layer has different impurity concentrations in a stacking direction.
9. The semiconductor light receiving element according to claim 8 , wherein
an impurity with which the semiconductor layer is doped is carbon.
10. The semiconductor light receiving element according to claim 1 , wherein
the semiconductor layer is formed based on In x Al y Ga (1-x-y) N, where 0≤x≤1, 0≤y≤1, and 0≤x+y≤1.
11. The semiconductor light receiving element according to claim 1 , wherein
the substrate is a GAN substrate.
12. A semiconductor relay, comprising:
the semiconductor light receiving element according to claim 1 ; and
a light emitting element which emits light toward the semiconductor light receiving element.
13. A semiconductor light receiving element, comprising:
a substrate;
a semiconductor layer of a direct transition type on the substrate, the semiconductor layer having semi-insulating properties;
a p-type semiconductor layer on at least part of the semiconductor layer;
a first electrode electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer; and
a second electrode spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, wherein
the first electrode includes a first opening part,
the p-type semiconductor layer includes a second opening part,
the first opening part includes a plurality of first openings each of which is elongated in shape and long in the first direction,
the second opening part includes a plurality of second openings each of which is elongated in shape and long in the second direction crossing the first direction,
the plurality of first openings are arranged side by side in a direction crossing the first direction,
the plurality of second openings are arranged side by side in a direction crossing the second direction, and
the semiconductor layer and the p-type semiconductor layer are exposed from each of the plurality of first openings.
14. The semiconductor light receiving element according to claim 13 , wherein
the first direction and the second direction are orthogonal to each other,
the plurality of first openings are arranged side by side in the second direction, and
the plurality of second openings are arranged side by side in the first direction.
15. A semiconductor relay, comprising:
the semiconductor light receiving element according to claim 13 , and
a light emitting element which emits light toward the semiconductor light receiving element.
16. A semiconductor light receiving element, comprising:
a substrate;
a semiconductor layer of a direct transition type on the substrate, the semiconductor layer having semi-insulating properties;
a p-type semiconductor layer on at least part of the semiconductor layer;
a first electrode electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer; and
a second electrode spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, wherein
the first electrode includes a first opening part, and
the second electrode is provided on the semiconductor layer, spaced apart from the first electrode and at least partially in contact with the semiconductor layer.
17. A semiconductor relay, comprising:
the semiconductor light receiving element according to claim 16 , and
a light emitting element which emits light toward the semiconductor light receiving element.
18. A semiconductor light receiving element, comprising:
a substrate;
a semiconductor layer of a direct transition type on the substrate, the semiconductor layer having semi-insulating properties;
a p-type semiconductor layer on at least part of the semiconductor layer;
a first electrode electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer; and
a second electrode spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, wherein
the first electrode includes a first opening part,
the second electrode is provided on a bottom surface of the substrate,
the semiconductor layer includes: a first semiconductor layer; and a second semiconductor layer closer to the substrate than the first semiconductor layer is, and
an impurity concentration of the first semiconductor layer is higher than an impurity concentration of the second semiconductor layer.
19. The semiconductor light receiving element according to claim 18 , wherein
the p-type semiconductor layer includes a second opening part,
the second opening part includes a plurality of openings each of which is annular in shape,
the plurality of openings are concentrically arranged,
an exposed part of the semiconductor layer exposed from the second opening part includes:
a first region where the first electrode is provided on the exposed part; and a second region where the first electrode is not provided on the exposed part, and
the first region and the second region are located alternately in a radial direction.
20. A semiconductor light receiving element, comprising:
a substrate;
a semiconductor layer of a direct transition type on the substrate, the semiconductor layer having semi-insulating properties;
a p-type semiconductor layer on at least part of the semiconductor layer;
a first electrode electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer; and
a second electrode spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, wherein
the first electrode includes a first opening part,
the second electrode is provided on a bottom surface of the substrate,
the semiconductor layer includes a portion where an impurity concentration in a stacking direction continuously changes, and
the impurity concentration of the portion is higher in an uppermost region than in any other region.