Array substrate having detection and compensation lead lines, display apparatus, method of fabricating array substrate, and pixel driving circuit having connection bridge
An array substrate includes an array of a plurality of subpixels including a plurality of columns of subpixels respectively spaced apart by a plurality of inter-subpixel regions; a plurality of pixel driving circuits respectively driving light emission of the plurality of subpixels; and a plurality of detection and compensation lead lines respectively configured to respectively detect signals in the plurality of subpixels and respectively compensate signals in the plurality of subpixels. A respective one of a plurality of detection and compensation lead lines is disposed in a first inter-subpixel region between two directly adjacent columns of subpixels. The respective one of the plurality of detection and compensation lead lines is spaced apart by at least one columns of subpixels from a signal line configured to transmit an alternating current and arranged along a direction parallel to the respective one of the plurality of detection and compensation lead lines.
1. An array substrate comprising:
an array of a plurality of subpixels comprising a plurality of columns of subpixels respectively spaced apart by a plurality of inter-subpixel regions;
a plurality of pixel driving circuits respectively driving light emission of the plurality of subpixels; and
a plurality of detection and compensation lead lines respectively configured to respectively detect signals in the plurality of subpixels and respectively compensate signals in the plurality of subpixels;
wherein one of a plurality of detection and compensation lead lines electrically connects a respective one of the plurality of pixel driving circuits to a data detection and compensation circuit;
a respective one of the plurality of detection and compensation lead lines is disposed in a first inter-subpixel region between two directly adjacent columns of subpixels; and
the respective one of the plurality of detection and compensation lead lines is spaced apart by at least one columns of subpixels from a signal line configured to transmit an alternating current and arranged along a direction parallel to the respective one of the plurality of detection and compensation lead lines.
2. The array substrate of claim 1 , further comprising a plurality of data lines configured to respectively transmit data signals to the plurality of subpixels;
wherein the plurality of data lines and the plurality of detection and compensation lead lines are arranged along a substantially same direction; and
the respective one of the plurality of detection and compensation lead lines is spaced apart by at least one columns of subpixels from any data line.
3. The array substrate of claim 2 , wherein, in at least a second inter-subpixel region of the plurality of inter-subpixel regions, two data lines of the plurality of data lines are in a same inter-subpixel region between two directly adjacent columns of sub pixels.
4. The array substrate of claim 1 , further comprising a plurality of low voltage signal lines configured to provide a low voltage signal to a cathode of a light emitting element in a respective one of the plurality of subpixels;
wherein the plurality of low voltage signal lines and the plurality of detection and compensation lead lines are arranged along a substantially same direction; and
a respective one of the plurality of low voltage signal lines and the respective one of the plurality of detection and compensation lead lines are in a same inter-subpixel region between two directly adjacent columns of subpixels.
5. The array substrate of claim 1 , further comprising a plurality of power supply lines configured to provide a high voltage signal to a respective one of the plurality of pixel driving circuit;
wherein the plurality of power supply lines and the plurality of detection and compensation lead lines are arranged along a substantially same direction;
a respective one of the plurality of power supply lines is disposed in a third inter-subpixel region between two directly adjacent columns of subpixels; and
the third inter-subpixel region is spaced apart from the first inter-subpixel region by at least one columns of subpixels.
6. The array substrate of claim 5 , wherein N columns of the plurality of columns of subpixels, N number of data lines of a plurality of data lines, the respective one of the plurality of detection and compensation lead lines, and a respective one of a plurality of low voltage signal lines are disposed between two most adjacent power supply lines of the plurality of power supply lines, N >2.
7. The array substrate of claim 6 , wherein the respective one of the plurality of detection and compensation lead lines and the respective one of the plurality of low voltage signal lines are disposed in a central-most inter-subpixel region between two adjacent central-most columns of the N columns of the plurality of columns of subpixels; and
in at least a second inter-subpixel region of the plurality of inter-subpixel regions, two data lines of the plurality of data lines are in a same inter-subpixel region between two directly adjacent columns of subpixels.
8. The array substrate of claim 1 , further comprising a plurality of detection and compensation lines electrically connected to the plurality of detection and compensation lead lines;
wherein a respective one of the plurality of detection and compensation lines electrically connects pixel driving circuits in a respective row of subpixels to the data detection and compensation circuit; and
a respective one of the plurality of detection and compensation lines is disposed in an inter-subpixel region between two directly adjacent rows of subpixels.
9. The array substrate of claim 8 , wherein a respective one of the plurality of pixel driving circuits comprises a storage capacitor;
the storage capacitor comprises a first capacitor and a second capacitor electrically connected in parallel;
the first capacitor comprises a semiconductor electrode layer, a first capacitor electrode, and an insulating layer between the semiconductor electrode layer and the first capacitor electrode; and
the second capacitor comprises the semiconductor electrode layer, a second capacitor electrode, and an inter-layer dielectric layer between the semiconductor electrode layer and the second capacitor electrode;
wherein the first capacitor electrode is configured to at least partially shield light irradiating on an active layer of a thin film transistor in the respective one of the plurality of pixel driving circuits;
an orthographic projection of the first capacitor electrode on a base substrate at least partially overlapping with an orthographic projection of the active layer of the thin film transistor in the respective one of the plurality of pixel driving circuits on the base substrate; and
the second capacitor electrode is in a same layer as a source electrode of the thin film transistor in the respective one of the plurality of pixel driving circuits.
10. The array substrate of claim 9 , wherein the respective one of the plurality of pixel driving circuits further comprises a driving thin film transistor and a switching thin film transistor;
a source electrode of the switching thin film transistor is connected to a respective one of a plurality of data lines;
a drain electrode of the switching thin film transistor is connected to the semiconductor electrode layer;
a gate electrode of the switching thin film transistor is connected to a respective one of a plurality of first gate lines;
a source electrode of the driving thin film transistor is connected to a respective one of a plurality of power supply lines;
a drain electrode of the driving thin film transistor is connected to a light emitting element in a respective one of the plurality of subpixels; and
a gate electrode of the driving thin film transistor is connected to a drain electrode of the switching thin film transistor;
wherein the semiconductor electrode layer and an active layer of the switching thin film transistor are parts of a unitary structure;
the respective one of the plurality of pixel driving circuits comprises a connection bridge electrically connecting the semiconductor electrode layer and the active layer of the switching thin film transistor;
the connection bridge is on a side of an extension portion of the gate electrode of the driving thin film transistor away from the base substrate;
the connection bridge comprises a first portion in direct contact with the extension portion of the gate electrode of the driving thin film transistor, a second portion in direct contact with the semiconductor electrode layer, and a third portion in direct contact with the active layer of the switching thin film transistor; and
the third portion functions as the source electrode of the switching thin film transistor.
11. The array substrate of claim 10 , wherein the connection bridge is in a same layer as the source electrode and the drain electrode of the driving thin film transistor;
the connection bridge extends through the inter-layer dielectric layer respectively on two sides of the extension portion of the gate electrode of the driving thin film transistor to respectively connected to two portions of the semiconductor electrode layer; and
an orthographic projection of the connection bridge on the base substrate partially overlaps with an orthographic projection of the gate electrode of the driving thin film transistor on the base substrate.
12. The array substrate of claim 10 , wherein the respective one of the plurality of pixel driving circuits further comprises a detection switch thin film transistor;
a source electrode of the detection switch thin film transistor is connected to the drain electrode of the driving thin film transistor;
a drain electrode of the detection switch thin film transistor is connected to the respective one of the plurality of detection and compensation lines;
a gate electrode of the detection switch thin film transistor is connected to a respective one of a plurality of second gate lines;
the second capacitor electrode, the source electrode of the detection switch thin film transistor, and the drain electrode of driving thin film transistor in the respective one of the plurality of pixel driving circuits are parts of a unitary structure;
the array substrate further comprises a passivation layer between the second capacitor electrode and an anode of a light element in a respective one of the plurality of subpixels; and
the anode of the light element in the respective one of the plurality of subpixels extends through the passivation layer to connect to the unitary structure.
13. The array substrate of claim 12 , wherein the respective one of the plurality of detection and compensation lines, a respective one of the plurality of first gate lines, and a respective one of the plurality of second gate lines are disposed in a same inter-subpixel region between two directly adjacent rows of subpixels.
14. The array substrate of claim 4 , further comprising:
an auxiliary cathode on a base substrate and electrically connected to a respective one of the plurality of low voltage signal lines;
at least a passivation layer on a side of the auxiliary cathode away from the base substrate;
wherein a cathode of a light emitting element extends through at least the passivation layer to connect to the auxiliary cathode.
15. A display apparatus, comprising the array substrate of claim 1 , and one or more integrated circuits connected to the array substrate.
16. A pixel driving circuit, comprising a storage capacitor;
wherein the storage capacitor comprises a first capacitor and a second capacitor electrically connected in parallel;
the first capacitor comprises a semiconductor electrode layer, a first capacitor electrode, and an insulating layer between the semiconductor electrode layer and the first capacitor electrode; and
the second capacitor comprises the semiconductor electrode layer, a second capacitor electrode, and an inter-layer dielectric layer between the semiconductor electrode layer and the second capacitor electrode;
wherein the first capacitor electrode is configured to at least partially shield light irradiating on an active layer of a thin film transistor in the respective one of a plurality of pixel driving circuits;
an orthographic projection of the first capacitor electrode on a base substrate at least partially overlapping with an orthographic projection of the active layer of the thin film transistor in the respective one of the plurality of pixel driving circuits on the base substrate; and
the second capacitor electrode is in a same layer as a source electrode of the thin film transistor in the respective one of the plurality of pixel driving circuits
wherein the pixel driving circuit further comprises a driving thin film transistor and a switching thin film transistor;
a source electrode of the switching thin film transistor is connected to a respective one of a plurality of data lines;
a drain electrode of the switching thin film transistor is connected to the semiconductor electrode layer;
a gate electrode of the switching thin film transistor is connected to a respective one of a plurality of first gate lines;
a source electrode of the driving thin film transistor is connected to a respective one of a plurality of power supply lines;
a drain electrode of the driving thin film transistor is connected to a light emitting element in a respective one of a plurality of subpixels; and
a gate electrode of the driving thin film transistor is connected to a drain electrode of the switching thin film transistor;
wherein the semiconductor electrode layer and an active layer of the switching thin film transistor are parts of a unitary structure;
the respective one of the plurality of pixel driving circuits comprises a connection bridge electrically connecting the semiconductor electrode layer and the active layer of the switching thin film transistor;
the connection bridge is on a side of an extension portion of the gate electrode of the driving thin film transistor away from the base substrate;
the connection bridge comprises a first portion in direct contact with the extension portion of the gate electrode of the driving thin film transistor, a second portion in direct contact with the semiconductor electrode layer, and a third portion in direct contact with the active layer of the switching thin film transistor; and
the third portion functions as the source electrode of the switching thin film transistor.
17. The pixel driving circuits of claim 16 , wherein the connection bridge is in a same layer as the source electrode and the drain electrode of the driving thin film transistor;
the connection bridge extends through the inter-layer dielectric layer respectively on two sides of the extension portion of the gate electrode of the driving thin film transistor to respectively connected to two portions of the semiconductor electrode layer; and
an orthographic projection of the connection bridge on the base substrate partially overlaps with an orthographic projection of the gate electrode of the driving thin film transistor on the base substrate.
18. The pixel driving circuits of claim 16 , further comprising a detection switch thin film transistor;
a source electrode of the detection switch thin film transistor is connected to the drain electrode of the driving thin film transistor;
a drain electrode of the detection switch thin film transistor is connected to the respective one of a plurality of detection and compensation lines;
a gate electrode of the detection switch thin film transistor is connected to a respective one of a plurality of second gate lines;
the second capacitor electrode, the source electrode of the detection switch thin film transistor, and the drain electrode of driving thin film transistor in the respective one of the plurality of pixel driving circuits are parts of a unitary structure;
the pixel driving circuits further comprises a passivation layer between the second capacitor electrode and an anode of a light element in a respective one of the plurality of subpixels; and
the anode of the light element in the respective one of the plurality of subpixels extends through the passivation layer to connect to the unitary structure.
19. A method of fabricating an array substrate, comprising:
forming an array of a plurality of subpixels comprising a plurality of columns of subpixels respectively spaced apart by a plurality of inter-subpixel regions;
forming a plurality of pixel driving circuits respectively driving light emission of the plurality of subpixels; and
forming a plurality of detection and compensation lead lines respectively configured to respectively detect signals in the plurality of subpixels and respectively compensate signals in the plurality of subpixels;
wherein one of the plurality of detection and compensation lead lines electrically connects a respective one of the plurality of pixel driving circuits to a data detection and compensation circuit;
a respective one of the plurality of detection and compensation lead lines is disposed in a first inter-subpixel region between two directly adjacent columns of subpixels; and
the respective one of the plurality of detection and compensation lead lines is spaced apart by at least one columns of subpixels from a signal line configured to transmit an alternating current and arranged along a direction parallel to the respective one of the plurality of detection and compensation lead lines.