Surface-emitting semiconductor laser chip
Surface-emitting semiconductor laser chip ( 1 ) comprising a carrier ( 20 ), a layer stack ( 10 ) arranged on the carrier ( 20 ) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact ( 310 ) and a rear side contact ( 320 ), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack ( 10 ), wherein in the carrier ( 20 ) an electrical through-connection ( 200 ) is provided, which extends from a bottom surface ( 20 a ) of the carrier ( 20 ) facing away from the layer stack ( 10 ) to a surface of the carrier ( 20 ) facing the layer stack ( 10 ), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection ( 200 ) parallel to the layer plane (L) on the surface facing the layer stack.
1. A surface-emitting semiconductor laser chip having a carrier, a layer stack arranged on the carrier and having a layer plane extending perpendicular to a stacking direction, a front side contact and a rear side contact, in which
in operation a predetermined distribution of a current density is achieved by means of current constriction in the layer stack, where
in the carrier an electrical through-connection is provided, which extends from a bottom surface of the carrier facing away from the layer stack to a surface of the carrier facing the layer stack,
the distribution of the current density is significantly influenced by the shape and size of a cross-section of the through-connection parallel to the layer plane on the surface facing the layer stack, and
the rear side contact is arranged between the layer stack and the carrier and directly adjoins the layer stack on one side and directly adjoins the through-connection on the other side.
2. The surface-emitting semiconductor laser chip according to claim 1 ,
in which the semiconductor laser chip forms a gain-guided semiconductor laser.
3. The surface-emitting semiconductor laser chip ( 1 ) according to claim 1 , in which
the carrier comprises a base body, wherein the base body is formed with an electrically conductive material, and
the through-connection is separated from the base body by means of an electrically insulating coating.
4. The surface-emitting semiconductor laser chip according to claim 3 ,
in which the through-connection has a higher thermal conductivity than the base body.
5. The surface-emitting semiconductor laser chip according to claim 1 ,
in which the length of the through-connection through the carrier is at least ten times greater than the mean diameter of the through-connection parallel to the bottom surface.
6. The surface-emitting semiconductor laser chip according to claim 1 , wherein
the layer stack comprises an active region between a first Bragg mirror and a second Bragg mirror,
the second Bragg mirror is arranged on a side of the active region facing away from the carrier, and
the active region completely projects beyond at least some layers of the second Bragg mirror in a direction perpendicular to the stacking direction.
7. The surface-emitting semiconductor laser chip according to claim 6 , wherein
the layers of the layer stack are formed in a simply connected manner, and
the electrical conductivity of each layer is constant along the layer plane.
8. The surface-emitting semiconductor laser chip according to claim 1 , wherein
a second insulation layer is arranged on a side of the layer stack facing away from the carrier, wherein
the second insulation layer is annular.
9. The surface-emitting semiconductor laser chip according to claim 1 ,
in which a third Bragg mirror is arranged on a side of the layer stack facing away from the carrier, wherein the third Bragg mirror completely overlaps with the through-connection along the stacking direction.
10. A surface-emitting semiconductor laser chip having a carrier, a layer stack arranged on the carrier and having a layer plane extending perpendicular to a stacking direction, a front side contact and a rear side contact, in which in operation a predetermined distribution of a current density is achieved by means of current constriction in the layer stack,
where in the carrier an electrical through-connection is provided, which extends from a bottom surface of the carrier facing away from the layer stack to a surface of the carrier facing the layer stack, the distribution of the current density is significantly influenced by the shape and size of a cross-section of the through-connection parallel to the layer plane on the surface facing the layer stack,
wherein the carrier comprises a base body, the base body formed with an electrically conductive material, and the through-connection is separated from the base body by means of an electrically insulating coating.
11. A surface-emitting semiconductor laser chip having a carrier, a layer stack arranged on the carrier and having a layer plane extending perpendicular to a stacking direction, a front side contact and a rear side contact, in which
in operation a predetermined distribution of a current density is achieved by means of current constriction in the layer stack, wherein
in the carrier an electrical through-connection is provided, which extends from a bottom surface of the carrier facing away from the layer stack to a surface of the carrier facing the layer stack,
the distribution of the current density is significantly influenced by a shape and size of a cross-section of the through-connection parallel to the layer plane on the surface facing the layer stack, and
a length of the through-connection through the carrier is at least ten times greater than a mean diameter of the through-connection parallel to the bottom surface.