Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component
An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent.
1. An optoelectronic semiconductor component comprising:
a semiconductor body with a contact metallization located at a main surface of the semiconductor body;
a protective layer partially covering the semiconductor body and the contact metallization;
a substrate firmly bonded to the semiconductor body at the main surface,
a recess and a terminal layer arranged within the recess,
wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and
wherein the terminal layer electrically contacts the contact metallization; and
a connection layer located between the substrate and the semiconductor body, the connection layer comprising a first region and a second region,
wherein the first region is bonded together with the second region without using a bonding agent.
2. The optoelectronic semiconductor component according to claim 1 , wherein the connection layer comprises SiO 2 .
3. The optoelectronic semiconductor component according to claim 1 , wherein the substrate comprises silicon.
4. The optoelectronic semiconductor component according to claim 1 , wherein the protective layer comprises nitride or oxide.
5. The optoelectronic semiconductor component according to claim 1 , wherein the protective layer comprises TaN, Ta 2 O 5 , TiN, TiO 2 , Si 3 N 4 , Si 2 ON 2 , SiO, SiO 2 , AlN or Al 2 O 3 .
6. The optoelectronic semiconductor component according to claim 1 , wherein the protective layer is formed by an ALD process.
7. The optoelectronic semiconductor component according to claim 1 , wherein the contact metallization contains a precious metal or a precious metal alloy.
8. The optoelectronic semiconductor component according to claim 1 , wherein the terminal layer comprises tungsten and/or copper.
9. The optoelectronic semiconductor component according to claim 1 , wherein a nickel- or gold- layer is arranged on the terminal layer in a region of the recess.
10. The optoelectronic semiconductor component according to claim 1 , wherein an adhesive layer is formed between the terminal layer and an inner wall of the recess.
11. The optoelectronic semiconductor component according to claim 10 , wherein the adhesive layer comprises TiN or TaN.
12. A method for producing an optoelectronic semiconductor component, the method comprising:
providing a substrate on which a first region of a connection layer is arranged, a semiconductor body, a protective layer, a contact metallization arranged between the protective layer and the semiconductor body and a second region of the connection layer, which is arranged on a side of the protective layer remote from the semiconductor body;
connecting the first region of the connection layer to the second region of the connection layer;
forming a recess from a side of the substrate facing away from the semiconductor body, which completely penetrates the substrate, the connection layer and the protective layer; and
forming a terminal layer into the recess to create an electrically conductive connection between the terminal layer and the contact metallization.
13. The method according to claim 12 , wherein forming the recess comprises:
etching through the substrate by a first etchant;
etching the connection layer by a second etchant; and
etching through the protective layer by a third etchant,
wherein the protective layer is stable with respect to the second etchant, and
wherein the contact metallization is stable with respect to the third etchant.
14. The method according to claim 12 , wherein the second region of the connection layer is planarized on the side remote from the semiconductor body after providing the connection layer and before connecting the first region of the connection layer to the second region of the connection layer.
15. The method according to claim 12 , wherein connecting the first region of the connection layer to the second region of the connection layer comprising connecting by direct bonding.
16. The method according to claim 12 , wherein forming the terminal layer comprises forming the terminal layer at temperatures up to at most 400° C.
17. The method according to claim 12 , wherein forming the terminal layer comprises forming the terminal layer at temperatures up to at most 250° C.