Optoelectronic component and method for producing an optoelectronic component
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip. The encapsulation is a polysiloxane. A barrier layer can be used for protection against harmful gases, the barrier layer being arranged on the encapsulation. The barrier layer is a plasma-polymerized siloxane layer.
1. An optoelectronic component comprising:
an optoelectronic semiconductor chip configured to emit radiation;
an encapsulation around the semiconductor chip, wherein the encapsulation comprises a polysiloxane; and
a barrier layer for protection against harmful gases, the barrier layer being arranged on the encapsulation,
wherein the barrier layer is a plasma-polymerized siloxane layer which is made of at least one precursor of the general formulae:
wherein R 1 to R 8 are each, independently of one another, selected from hydrogen, alkyl and alkenyl, and
wherein n is selected from 0, 1, 2 and 3.
2. The optoelectronic component according to claim 1 , wherein the barrier layer comprises a layer thickness of 10 nm to 20 μm.
3. The optoelectronic component according to claim 1 , wherein the encapsulation comprises a surface forming an outer surface of the optoelectronic component, and wherein the barrier layer is arranged directly on the surface.
4. The optoelectronic component according to claim 3 , wherein the surface comprises a main beam exit surface of the optoelectronic component.
5. The optoelectronic component according to claim 1 , wherein the barrier layer is made of the precursor of the general formula:
wherein n equals 0 so that the precursor has the following formula:
and
wherein R 1 to R 6 are each, independently of one another, selected from hydrogen, methyl and vinyl.
6. The optoelectronic component according to claim 1 , wherein the precursor is selected from the group consisting of
and mixtures thereof.
7. The optoelectronic component according to claim 1 , wherein the barrier layer is deposited at atmospheric pressure or in a vacuum.
8. The optoelectronic component according to claim 1 , wherein a deposition of the barrier layer is carried out in presence of an oxidizing gas and/or in presence of an inert gas.
9. The optoelectronic component according to claim 1 , wherein a deposition of the barrier layer is carried out in presence of air.
10. The optoelectronic component according to claim 1 , wherein the barrier layer is deposited in a manner in which one or more deposition parameters are varied so that the barrier layer comprises a gradient.
11. The optoelectronic component according to claim 1 , further comprising a further barrier layer on the barrier layer, wherein the further barrier layer is also a plasma-polymerized layer.
12. A method for producing an optoelectronic component, the method comprising:
providing an optoelectronic semiconductor chip configured to emit radiation and an encapsulation around the semiconductor chip, wherein the encapsulation comprises a polysiloxane; and
depositing a barrier layer for protection against harmful gases on the encapsulation by plasma polymerization, wherein the barrier layer is a plasma-polymerized siloxane layer made of a precursor of the following general formulae:
wherein R 1 to R 8 are each, independently of one another, selected from hydrogen, alkyl and alkenyl, and
wherein n is selected from 0, 1, 2 and 3.
13. The method according to claim 12 , further comprising performing a pretreatment or cleaning of a surface of the encapsulation prior to depositing the barrier layer.
14. The method according to claim 13 , wherein performing the pretreatment or cleaning comprises a plasma pretreatment or cleaning.
15. The method according to claim 12 , wherein, prior to providing the optoelectronic semiconductor chip and the encapsulation around the semiconductor chip, a plurality of semiconductor chips is applied and attached to a substrate and provided with the encapsulation.
16. The method according to claim 15 , further comprising separating the semiconductor chips with the encapsulation prior to or after depositing the barrier layer.
17. The method according to claim 12 , wherein depositing the barrier layer comprises depositing the barrier layer by varying one or more deposition parameters so that the barrier layer comprises gradient.
18. The method according to claim 12 , wherein further barrier layer is deposited on the barrier layer, wherein the further barrier layer is also a plasma-polymerized layer.