Nitride semiconductor ultraviolet light-emitting element
To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element. In the n-type AlGaN-based semiconductor layer 21 constituting the nitride semiconductor light-emitting element 1 , a plurality of thin film-like Ga-rich layers that is a part of the n-type layer 21 having a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface of the n-type layer 21 , an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane, the plurality of Ga-rich layers exists in stripes on the second plane parallel to the upper surface of the n-type layer 21 in an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer 21 , AlN molar fractions of the Ga-rich layers 21 b are greater than AlN molar fraction of a well layer 22 b in an active layer 22 constituting the light-emitting element 1.
1. A nitride semiconductor ultraviolet light-emitting element comprising:
a semiconductor laminated portion including an n-type layer composed of an n-type AlGaN-based semiconductor layer, an active layer of an AlGaN-based semiconductor layer formed on a first region on an upper surface of the n-type layer, and a p-type layer composed of at least one p-type AlGaN-based semiconductor layer formed on an upper surface of the active layer;
an n-electrode formed on a second region that is not the first region on the upper surface of the n-type layer; and
a p-electrode formed on an upper surface of the p-type layer,
wherein the active layer has a quantum well structure comprising at least one well layer composed of an AlGaN-based semiconductor layer,
in the n-type layer below at least the first region of the upper surface of the n-type layer, a plurality of thin film Ga-rich layers that is a part of the n-type layer having a locally high Ga composition ratio exists spaced apart from each other in a vertical direction that is orthogonal to the upper surface,
an extending direction of at least a part of the plurality of Ga-rich layers on a first plane parallel to the vertical direction is inclined with respect to an intersection line between the upper surface of the n-type layer and the first plane,
in each of a plurality of second planes parallel to the upper surface of the n-type layer, the plurality of Ga-rich layers is present in stripes, and at least one of the plurality of second planes exists in an upper layer region having a thickness of 100 nm or less at lower side from the upper surface of the n-type layer,
AlN molar fractions of the Ga-rich layers present below the first region are larger than an AlN molar fraction of the well layer.
2. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein minute areas of 1 μm square or less in which composition modulation of Ga occurs due to partial presence of the Ga-rich layers in stripes is dispersed on at least one of the second planes in the upper layer region below the first region.
3. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein
the plurality of Ga-rich layers has at least portions separated in the vertical direction in the upper layer region, and
a minimum value of vertical separation distance between the vertically adjacent Ga-rich layers is 100 nm or less.
4. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein at least a part of the plurality of Ga-rich layers exists in the n-type layer below an area where the n-electrode is formed in the second region of the upper surface of the n-type layer.
5. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein at least a part of the plurality of Ga-rich layers has a low inclined portion in which an inclination angle of the extending direction of the Ga-rich layers on the first plane is 0° or more and 10° or less with respect to the intersection line.
6. The nitride semiconductor ultraviolet light-emitting element according to claim 5 , wherein the low inclined portion exists in the upper layer region.
7. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein the plurality of Ga-rich layers has at least portions intersecting with or diverging from another Ga-rich layer on the first plane.
8. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein a low impurity concentration layer having a relatively lower n-type impurity concentration than other regions in the n-type layer exists in the n-type layer as a layer parallel to the second plane.
9. The nitride semiconductor ultraviolet light-emitting element according to claim 8 , wherein the low impurity concentration layer is present in the upper layer region.
10. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , wherein an inclination angle of the extending direction with respect to the intersection line at any one point of the plurality of Ga-rich layers on the first plane is within a range of 0° or more and less than 45°.
11. The nitride semiconductor ultraviolet light-emitting element according to claim 1 , further comprising an underlying part including a sapphire substrate, wherein
the semiconductor laminated portion is formed on the underlying part, and
a plurality of step portions to be growth start points of the Ga-rich layers is dispersedly formed on an upper surface of the underlying part.