Semiconductor light emitting device
A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.
1. A semiconductor light emitting device, comprising:
a substrate; and
an array including three or more light emitting elements which are aligned above and along a main surface of the substrate and each emit light,
wherein the three or more light emitting elements each include:
a clad layer of a first conductivity type disposed above the substrate, the clad layer of the first conductivity type being a layer that is entirely a semiconductor of the first conductivity type,
an active layer containing In disposed above the clad layer of the first conductivity type, and
a clad layer of a second conductivity type disposed above the active layer, the clad layer of the second conductivity type being a layer that is entirely a semiconductor of the second conductivity type, the second conductivity type being different from the first conductivity type,
among the three or more light emitting elements, a compositional ratio of In in the active layer is smaller in a light emitting element located in a central area in an alignment direction than in light emitting elements located in both end areas in the alignment direction, and
among the three or more light emitting elements, an off angle of the substrate in a region including the light emitting element located in the central area in the alignment direction is smaller than an off angle of the substrate in regions including the light emitting elements located in both end areas in the alignment direction.
2. The semiconductor light emitting device according to claim 1 ,
wherein the active layer has a quantum well structure including a well layer and a barrier layer, and
among the three or more light emitting elements, a compositional ratio of In in the well layer is smaller in the light emitting element located in the central area in the alignment direction than in the light emitting elements located in both end areas in the alignment direction.