Component with electrically conductive converter layer

1. A component comprising:

a semiconductor body;

a converter layer arranged on the semiconductor body; wherein the converter layer is divided into a plurality of spatially separated sub-layers capable of being individually electrically contacted, wherein each sub-layer of the converter layer is electrically insulated from the other sub-layers of the converter layer; wherein each sub-layer of the converter layer comprises:

fluorescent particles, and an electrically conductive matrix material, wherein the fluorescent particles are embedded in the matrix material; and

the semiconductor body has an active zone for generating electromagnetic radiation, wherein the spatially separated sub-layers of the converter layer are configured for the local electrical contacting of the active zone; and

a first electrode on its front main surface and a second common electrode on its rear main surface, wherein the first electrode having a plurality of planar individual contact layers, each of the planar individual contact layers being connected in an electrically conductive manner to one of the sub-layers of the converter layer.

2. The component as claimed in claim 1 ,

wherein a current spreading layer is absent between the converter layer and the semiconductor body.

3. The component as claimed in claim 1 ,

wherein the converter layer is arranged directly on the semiconductor body.

4. The component as claimed in claim 1 ,

wherein the converter layer has at least three sub-layers with different types of fluorescent particles or with different fluorescent substance compositions, wherein the at least three sub-layers partially cover the same active zone of the semiconductor body in plan view.

5. The component as claimed in claim 1 ,

wherein the fluorescent particles have an average particle size ranging from 1 nm to 1 μm inclusive.

6. The component as claimed in claim 1 ,

wherein the fluorescent particles are quantum dots having an average particle size ranging from 1 nm to 10 nm inclusive.

7. The component as claimed in claim 1 ,

wherein in the operation of the component, the active zone has at least one radiation-inactive sub-region and a plurality of radiation-active sub-regions, wherein in plan view of the semiconductor body

the converter layer and the radiation-inactive sub-region do not overlap, and

the radiation-active sub-regions are covered by the sub-layers of the converter layer.

8. The component as claimed in claim 7 ,

wherein the radiation-inactive sub-region and the radiation-active sub-regions are adjacent regions of the same coherently formed active zone of the semiconductor body.

9. The component as claimed in claim 1 ,

wherein the matrix material has a radiation-permeable and electrically conductive oxide.

10. The component as claimed in claim 1 ,

wherein the converter layer has metallic additive particles embedded in the matrix material to increase the electrical conductivity of the converter layer.

11. The component as claimed in claim 1 ,

wherein the converter layer has organic or inorganic additive particles embedded in the matrix material to reduce internal mechanical stresses in the converter layer.

12. The component as claimed in claim 1 ,

wherein the converter layer has additional particles embedded in the matrix material for adjusting the degree of reflection and/or permeability of the converter layer, the additional particles being formed of a material with a refractive index greater than a refractive index of the matrix material.

13. The component as claimed in claim 12 ,

wherein the additional particles are nanoparticles of titanium oxide and/or zirconium oxide.

14. The component as claimed in claim 1 ,

further comprising a first electrode and a second electrode on its main surface facing away from the converter layer, the first electrode having a plurality of vias extending in each case from the main surface through the second electrode and the semiconductor body to one of the sub-layers of the converter layer.

15. A display device having the component as claimed in claim 1 ,

wherein a sub-region of the semiconductor body and a group of at least three sub-layers of the converter layer form a pixel group of the display device to display any chromaticity coordinate, and

wherein a further sub-region of the semiconductor body and a further group of at least three additional sub-layers of the converter layer form an additional pixel group of the display device for displaying any chromaticity coordinate, wherein the sub-region and the further sub-region of the semiconductor body are designed in a contiguous manner.

16. A method for producing a component as claimed in claim 1 ,

wherein the method comprises producing the converter layer by a sol-gel process.

17. A component comprising:

a semiconductor body;

a converter layer arranged on the semiconductor body; wherein the converter layer is divided into a plurality of spatially separated sub-layers capable of being individually electrically contacted, wherein each sub-layer of the converter layer is electrically insulated from the other sub-layers of the converter layer; wherein each sub-layer of the converter layer comprises:

fluorescent particles, and an electrically conductive matrix material, wherein the fluorescent particles are embedded in the matrix material; and

the semiconductor body has an active zone for generating electromagnetic radiation,

wherein the spatially separated sub-layers of the converter layer are configured for the local electrical contacting of the active zone;

a first electrode and a second electrode on its main surface facing away from the converter layer, the first electrode having a plurality of vias extending in each case from the main surface through the second electrode and the semiconductor body to directly contact one of the sub-layers of the converter layer.