Method for producing a semiconductor device and semiconductor device
A method for producing a semiconductor device may include applying one or more semiconductor components onto a device body where the device body has a substrate and an integrated circuit. The semiconductor component(s) may include an active zone configured to receive radiation. The method may further include transferring a multitude of semiconductor components from a sacrificial wafer to a target wafer with the device bodies still coupled by using a stamp to place them onto said device bodies. The stamp may be pressed onto the semiconductor components to adhere to the semiconductor components to the stamp and transfer them. As soon as the stamp moves in the opposite direction, the semiconductor component(s) may be separated from holding structures by breaking away webs or their projections on the second semiconductor body and leaving a breaking point directly on an outside of the semiconductor component.
1. A method for manufacturing a semiconductor device, wherein the method comprises:
separating a multitude of semiconductor components from holding structures of a sacrificial wafer comprising the semiconductor components by pressing a stamp onto the semiconductor components to adhere to the semiconductor components and by breaking away webs or their attachments to the semiconductor components by moving the stamp into a direction away from the sacrificial wafer, leaving a breaking point directly on an outside of the semiconductor component, wherein each semiconductor component comprises an active zone configured to receive radiation;
transferring the multitude of semiconductor components from the sacrificial wafer to a target wafer comprising a plurality of device bodies coupled to each other, each device body comprising a substrate and an integrated circuit;
simultaneously placing the multitude of semiconductor components onto the plurality of device bodies by micro-transfer printing, such that the semiconductor components are coupled to the device bodies;
and
arranging a diffuser or a refractive layer on the one or more semiconductor components.
2. A semiconductor device comprising:
a device body comprising a substrate and an integrated circuit,
a first and a second semiconductor component, wherein each semiconductor component comprises an active zone configured to receive radiation and a breaking point, wherein each semiconductor component is arranged on the device body, wherein each semiconductor component is electrically conductively coupled to the integrated circuit, and wherein a sensitive spectral range of the first semiconductor component differs from that of the second semiconductor component; and
a diffuser or a refractive layer arranged on the one or more semiconductor components.
3. The semiconductor device according to claim 2 ,
wherein the semiconductor component or the plurality of semiconductor components was applied to the device body by micro-transfer printing.
4. The semiconductor device according to claim 2 ,
wherein a material system of a first semiconductor component of the plurality of semiconductor components differs from that of a second semiconductor component of the plurality of semiconductor components.
5. The semiconductor device according to claim 4 ,
wherein the different material systems comprise at least one of the group comprising silicon, germanium, III-V compounds, and II-IV compounds.
6. The semiconductor device according to claim 2 ,
wherein the substrate of the device body comprises silicon.
7. The semiconductor device according to claim 2 ,
wherein the device body comprises a transimpedance amplifier, an evaluation unit, or combinations thereof.
8. The semiconductor device according to claim 2 ,
further comprising a layer that absorbs in a given wavelength range and is arranged on the semiconductor component or the plurality of semiconductor components or is applied to a detection region of the semiconductor component or to a detection region of at least one of the plurality of semiconductor components.
9. The semiconductor device according to claim 2 ,
wherein a first set of semiconductor components of the plurality of semiconductor components is arranged in a first cell, wherein a second set of semiconductor components of the plurality of semiconductor components is arranged in a second cell, wherein at least the first cell and the second cell form an array of cells.
10. The semiconductor device according to claim 9 ,
wherein the semiconductor components within the first cell or the second cell differ in their sensitive spectral ranges.
11. The semiconductor device according to claim 2 ,
further comprising at least one active zone configured to generate radiation.
12. The semiconductor device according to claim 11 ,
further comprising a further radiation-emitting semiconductor component or a plurality of further radiation-emitting semiconductor components, wherein further radiation-emitting semiconductor component comprises an active zone configured to generate radiation and a breaking point and is arranged on the device body and is electrically conductively coupled to the integrated circuit.