Method for manufacturing an electrically operable heating body for an inhaler
Method for manufacturing an electrically operable heating body for an inhaler, wherein a semiconductor material is provided so as to be substantially planar, and a plurality of channels are incorporated into the semiconductor material substantially in the direction of the surface normal of the planar semiconductor material, such that a fluid can pass through the semiconductor material in the channels.
1. A method for manufacturing an electrically operable, planar heating body for an inhaler, comprising:
providing a substantially planar metal-free semiconductor material;
forming a plurality of channels into the substantially planar semiconductor material, wherein the plurality of channels are substantially in a direction of a surface normal of the substantially planar metal-free semiconductor material, wherein a fluid can pass through the substantially planar semiconductor material in the plurality of channels,
applying, at least in regions, at least one coating to the substantially planar semiconductor material on at least one face of the substantially planar semiconductor material, and wherein the at least one coating is a metal coating so as to form heating elements, and wherein the metal coating is annular in portions of the channels or in the walls of the channels.
2. The method according to claim 1 , wherein the substantially planar semiconductor material is silicon.
3. The method according to claim 1 , wherein an electrical conductivity of the substantially planar semiconductor material is improved at least in regions by doping.
4. The method according to claim 3 , wherein the substantially planar semiconductor material is n-doped.
5. The method according to claim 1 , further comprising:
providing the substantially planar semiconductor material with electrical contacts using the at least one metal coating.
6. The method according to claim 1 , further comprising:
oxidizing the substantially planar semiconductor material at least in regions of the metal-free semiconductor material.
7. The method according to claim 1 , further comprising:
forming the plurality of channels in the semiconductor material by etching.
8. The method according to claim 7 , wherein reactive ion etching is used in forming the plurality of channels.
9. The method according to claim 7 , wherein the plurality of channels are fluidically accessible from both sides of the substantially planar semiconductor material.
10. The method according to claim 1 , further comprising:
forming a plurality of heating bodies on a wafer; and
removing individual heating bodies or groups of heating bodies from the wafer.
11. The method according to claim 10 , wherein the individual heating bodies or the groups of heating bodies are further used as a bare chip.
12. The method according to claim 1 , wherein the heating body is for evaporating liquid in an electronic cigarette product.
13. A heating body for an inhaler, wherein the heating body is manufactured using the method according to claim 1 .
14. A wafer made of a semiconductor material, comprising a plurality of elements which are suitable as heating bodies and are manufactured using the method according to claim 1 .