Power semiconductor device
An object of the present invention is to improve assemblability of a power semiconductor device. A power semiconductor device includes a plurality of submodules that includes a semiconductor element interposed between a source conductor and a drain conductor, a sense wiring that transmits a sense signal of the semiconductor element, and an insulating portion at which the sense wiring and the sense conductor are arranged, and a source outer conductor that is formed to surround the source conductor and is joined to the source conductor in each of the plurality of submodules. Each source conductor included in the plurality of submodules includes protrusion portions that are formed toward the sensor wiring from the source conductor, are connected to the sense wiring, and define a distance between the sense wiring and the source outer conductor.
1. A power semiconductor device comprising:
a plurality of submodules that includes a semiconductor element interposed between a source conductor and a drain conductor, a sense wiring that transmits a sense signal of the semiconductor element, and an insulating portion at which the sense wiring and the source conductor are arranged; and
a source outer conductor that is formed to surround the source conductor and is joined to the source conductor in each of the plurality of submodules,
wherein each source conductor included in the plurality of submodules includes protrusion portions that are formed toward the sensor wiring from the source conductor, are connected to the sense wiring, and define a distance between the sense wiring and the source outer conductor.
2. The power semiconductor device according to claim 1 , wherein the protrusion portions are formed by using a member different from the source conductor, and are connected to the source conductor by metal joint portions.
3. The power semiconductor device according to claim 1 , wherein
each of the plurality of submodules includes a plurality of semiconductor elements including the semiconductor element, and
the protrusion portions are formed at positions that do not overlap with first regions in which the plurality of semiconductor elements is arranged and a second region between the plurality of semiconductor elements when viewed from an arrangement direction of the source conductor and the drain conductor.
4. The power semiconductor device according to claim 1 , wherein
each of the plurality of submodules includes a plurality of semiconductor elements including the semiconductor element, and
the protrusion portions are formed such that the number of protrusion portions is the same as the number of semiconductor elements or is larger than the number of semiconductor elements.
5. The power semiconductor device according to claim 4 , wherein, when viewed from an arrangement direction of the source conductor and the drain conductor, the sense wiring is formed so as to be formed between the plurality of semiconductor elements.