Light-emitting diode device
A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.
1. A light-emitting device, comprising:
a substrate, comprising a first edge, a second edge, a third edge and a fourth edge, wherein the first edge and the third edge are opposite each other, the second edge and the fourth edge are opposite each other and the first edge is longer than the second edge;
a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween;
a first electrode formed on the first semiconductor layer, comprising a first pad electrode;
a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode extending from the second pad electrode toward the second edge; and
a current blocking region between the first pad electrode and the first semiconductor layer,
wherein in a top view, the first pad electrode is adjacent to a corner of the substrate;
the second finger electrode is not parallel with the third edge and the first edge;
a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge; and
the first pad electrode has a width larger than that of the current blocking region.
2. The light-emitting device according to claim 1 , wherein the second pad electrode is located at a side of the fourth edge.
3. The light-emitting device according to claim 1 , wherein a contour of the first pad electrode exceeds a contour of the current blocking region more than 2 μm.
4. The light-emitting device according to claim 1 , wherein the first electrode doesn't have any finger electrodes extending from the first pad electrode.
5. A light-emitting device, comprising:
a substrate, comprising a first edge, a second edge, a third edge and a fourth edge, wherein the first edge and the third edge are opposite each other, the second edge and the fourth edge are opposite each other and the first edge is longer than the second edge;
a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween;
a first electrode formed on the first semiconductor layer, comprising a first finger electrode; and
a second electrode formed on the second semiconductor layer, comprising a second finger electrode;
wherein:
the first finger electrode is disposed at and along the first edge;
in a top view, the second finger electrode comprises a second overlapping portion overlapping the first finger electrode and a second non-overlapping portion that does not overlap the first finger electrode;
the second overlapping portion comprises a first end connecting the second non-overlapping portion and a second end opposite to the first end; and
the second overlapping portion extends from the first end toward the second end in an extending direction and the extending direction is not parallel with the first edge.
6. The light-emitting device according to claim 5 , wherein the second non-overlapping portion is parallel with the first edge.
7. The light-emitting device according to claim 5 , wherein the second overlapping portion comprises a curve.
8. The light-emitting device according to claim 5 , wherein the second overlapping portion is longer than the second non-overlapping portion.
9. The light-emitting device according to claim 5 , wherein the first electrode further comprises a first pad electrode connecting to the first finger electrode and the first pad electrode is disposed at the second edge and the first finger electrode extends along the second edge and the first edge.
10. The light-emitting device according to claim 5 , wherein the shortest distance between the second end of the second overlapping portion and a contour of the second semiconductor layer is smaller than 90 μm.
11. The light-emitting device according to claim 5 , wherein the second electrode further comprises a second pad electrode connecting to the second finger electrode and the light-emitting device further comprises a current blocking region under the second pad electrode; and wherein the current blocking region comprises a core region comprising a plurality of islands under the second pad electrode.
12. The light-emitting device according to claim 11 , further comprising a transparent conductive layer on the second semiconductor layer; wherein the transparent conductive layer comprises an opening exposing the core region.
13. The light-emitting device according to claim 12 , wherein a distance between an outer edge of the core region and the opening ranges from 1 μm to 10 μm.
14. The light-emitting device according to claim 5 , further comprising a current blocking region under the first finger electrode;
wherein the current blocking region comprises a plurality of islands and one of the island comprises a round corner or a round edge.
15. The light-emitting device according to claim 5 , wherein the second electrode further comprises a second pad electrode connecting to the second non-overlapping portion; and wherein in a top view:
the second overlapping portion does not extend beyond a tangent to the second pad electrode which is adjacent to and parallel with the third edge; and
the largest distance between the second overlapping portions and the first finger electrode is larger than the shortest distance between the second end and the second semiconductor layer.
16. A light-emitting device, comprising:
a substrate, comprising a first edge, a second edge, a third edge and a fourth edge, wherein the first edge and the third edge are opposite each other, and the second edge and the fourth edge are opposite each other;
a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween;
a transparent conductive layer, formed on the second semiconductor layer;
a first electrode formed on the first semiconductor layer, comprising a first pad electrode and a first finger electrode extending from the first pad electrode; and
a second electrode formed on the second semiconductor layer;
wherein in a top view, the second semiconductor layer comprises an contour, and the contour comprises a first sub-contour adjacent to the first finger electrode and a second sub-contour connecting to the first sub-contour and adjacent to the first edge; and wherein the transparent conductive layer does not exceed a pseudo extending line of the first sub-contour.
17. The light-emitting device according to claim 16 , wherein an area of the transparent conductive layer is smaller than 93% of an area of the second semiconductor layer in a top view.
18. The light-emitting device according to claim 16 , wherein a distance between the transparent conductive layer and the second sub-contour is greater than a distance between the transparent conductive layer and the contour of the second semiconductor layer at the second edge, the third edge or the fourth edge.
19. The light-emitting device according to claim 16 , wherein the second electrode further comprises a second finger electrode and the second finger electrode is not parallel with the first edge.