Large-grain tin sputtering target
The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.
1. A method of manufacturing a planar sputtering target having a planar sputtering surface, and a back surface opposite the planar sputtering surface, wherein the planar sputtering target is formed from tin having a purity of at least 2N and an average grain size from at least 10 mm to at most 100 mm, and a maximum grain size to a mean grain size ratio from 1.9 to 2.4 the method consisting of the steps:
casting molten tin of at least 2N purity;
thermomechanical processing the cast tin to form a thermomechanically processed tin; and
heat treating the thermomechanically processed tin at a temperature of from at least 175° C. to at most 225° C. for a time of from at least 2 hours to at most 48 hours to form the planar sputtering target having the average grain size from at least 10 mm to at most 100 mm, and a maximum grain size to a mean grain size ratio from 1.9 to 2.4.
2. The method of claim 1 , wherein the step of casting molten tin includes having a crucible temperature of from about 235° C. to about 350° C. for about one hour followed by pouring the molten tin into a mold to form a near net casting.
3. The method of claim 2 , wherein the mold is preheated to a temperature of from about 250° C. to about 375° C. for a time of about 30 minutes.
4. The method of claim 2 , wherein the step of pouring the molten tin into the mold is followed by slow cooling at a rate of 250° C. per hour or less.
5. The method of claim 2 , wherein the near net casting is sized to a diameter from about 150 mm to about 600 mm and to a thickness from about 20 mm to about 69 mm.
6. The method of claim 2 , wherein the step of thermomechanically processing the near net casting includes cross-rolling reduction from about 5% to about 15%.
7. The method of claim 2 , wherein the step of thermomechanically processing is performed by a method other than rolling such as forging, extrusion, ECAE/ECAP, torsion, RCS, and variants thereof.
8. The method of claim 2 , wherein the step of heat treating the thermomechanically processed tin is at a temperature of from at about 200° C. for a time of about 4 hours.
9. The method of claim 1 , wherein the step of casting molten tin forms a billet followed by slicing the billet to form a plurality of blanks.
10. The method of claim 9 , wherein the billet is sized to a diameter of about 171 mm (6.75 inches) and to a height of about 457 mm (18 inches).
11. The method of claim 9 , wherein the step of thermomechanically processing the billet includes individually thermomechanically processing the plurality of blanks by cross-rolling reduction by at least 50%.
12. The method of claim 11 , wherein the step of thermomechanically processing the billet includes individually thermomechanically processing the plurality of blanks by cross-rolling reduction by at least 60% to at most 80%.
13. The method of claim 9 , wherein the step of thermomechanically processing the billet is performed by a method other than rolling such as forging, extrusion, ECAE/ECAP, torsion, RCS, and variants thereof.
14. The method of claim 9 , wherein the step of heat treating the thermomechanically processed tin is at a temperature of from at about 200° C. for a time of about 4 hours.
15. A planar sputtering target comprising:
a planar sputtering surface; and,
a back surface opposite the planar sputtering surface;
wherein the planar sputtering target is formed from tin having a purity of at least 2N, an average grain size from at least 10 mm to at most 100 mm, and a maximum grain size to minimum grain size ratio from 3.1 to 7.3.
16. The planar sputtering target of claim 15 , wherein the tin is a high purity tin having an impurity content of at most 15 ppm.
17. The planar sputtering target of claim 15 , wherein the tin is a high purity tin having an alpha count of less than 0.01 cph/cm 2 .
18. A planar sputtering target comprising:
a planar sputtering surface; and,
a back surface opposite the planar sputtering surface;
wherein the planar sputtering target is formed from tin having a purity of at least 2N, an average grain size from at least 10 mm to at most 100 mm, and a grain size standard deviation to mean grain size ratio from 0.3 to 0.6.
19. The planar sputtering target of claim 18 , wherein the tin is a high purity tin having an impurity content of at most 15 ppm.
20. The planar sputtering target of claim 18 , wherein the tin is a high purity tin having an alpha count of less than 0.01 cph/cm 2 .