Photovoltaic device comprising a metal halide perovskite and a passivating agent
The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to photovoltaic and optoelectronic devices comprising passivated metal halide perovskites. The device according to the invention comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite. The invention also provides a process for producing a photovoltaic device, which photovoltaic device comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite, wherein the process comprises treating a metal halide perovskite with a passivating agent, which passivating agent is an organic compound and is suitable for chemically bonding to anions or cations in the metal halide perovskite.
1. A photovoltaic device comprising a semiconductor, wherein the semiconductor comprises:
(a) a metal halide perovskite; and
(b) a passivating agent which is an organic compound;
wherein:
molecules of the passivating agent are disposed at grain boundaries within the metal halide perovskite and are not chemically bonded to anions or cations in the metal halide perovskite; and
the passivating agent is an organic compound having a molecular weight of less than 1000 g mol −1 and wherein the passivating agent comprises a non-polar polycyclic aromatic hydrocarbon.
2. A photovoltaic device according to claim 1 , wherein the molecules of the passivating agent block interaction between anions and cations in the metal halide perovskite at the grain boundaries.
3. A photovoltaic device according to claim 1 , wherein the passivating agent comprises any of naphthalene, anthracene, phenanthrene, pyrene, and fluoranthene.
4. A photovoltaic device according to claim 1 , wherein the metal halide perovskite is a perovskite of the formula (I):
[A][B][X] 3 (I)
wherein:
[A] is at least one organic cation;
[B] is at least one metal cation, wherein [B] comprises at least one of Ca 2+ , Sr 2+ , Cd 2+ , Cu 2+ , Ni 2+ , Mn 2+ , Fe 2+ , Co 2+ , Pd 2+ , Ge 2+ , Sn 2+ , Pb 2+ , Yb 2+ , and Eu 2+ ; and
[X] is at least one halide anion.
5. A photovoltaic device according to claim 4 , wherein [B] comprises at least one of Sn 2+ , Pb 2+ , Cu 2+ , Ge 2+ and Ni 2+ .
6. A photovoltaic device according to claim 1 , wherein the metal halide perovskite has a band gap of less than or equal to 3.0 eV.
7. A photovoltaic device according to claim 1 , wherein the metal halide perovskite has a band gap of less than or equal to 2.0 eV.
8. A photovoltaic device according to claim 1 , wherein the photovoltaic device comprises a layer of said semiconductor.
9. A photovoltaic device according to claim 8 , wherein the layer of the semiconductor is without open porosity.
10. A photovoltaic device according to claim 8 , wherein the layer of the semiconductor has a thickness of at least 100 nm.
11. A photovoltaic device according to claim 8 , wherein the photovoltaic device comprises
(a) an n-type region comprising at least one n-type layer;
(b) a p-type region comprising at least one p-type layer; and
(c) the layer of the semiconductor disposed between the n-type region and the p-type region.
12. A photovoltaic device according to claim 1 , wherein the photovoltaic device is a photodiode, a solar cell, a photodetector, or a photosensor.