IP Library Granted Patent US 11,302,679
Granted Patent B2
US 11,302,679 · App. 16/990,998 · Granted Apr 12, 2022

Manufacturing method of micro-LED display panel

Inventors: Ying-Tsang Liu (Hsinchu County, TW); Yu-Chu Li (Hsinchu County, TW); Pei-Hsin Chen (Hsinchu County, TW); Yi-Ching Chen (Hsinchu County, TW)
Assignee: PlayNitride Inc.
H01L25/0753H01L24/32H01L24/81H01L24/83H01L24/95H01L25/167H01L33/38H01L33/62H01L24/14H01L24/16H01L24/29H01L24/73H01L33/0093H01L2224/1403H01L2224/2929H01L2224/29298H01L2224/32145H01L2224/73204H01L2224/81903H01L2224/83005H01L2224/83192H01L2224/83203H01L2224/83851H01L2224/95001H01L2924/00014H01L2924/10156H01L2924/12041H01L2933/0066
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Quick Facts
Patent No.
US 11,302,679
App. No.
16/990,998
Granted
Apr 12, 2022
Kind
B2
Abstract

A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 μm to 30 μm.

Claims (10)

1. A manufacturing method of a micro-LED display panel, comprising:

(A) providing a substrate with an anisotropic conductive film;

(B) transferring a plurality of micro-LEDs to a temporary carrier from different growth substrate with different color, wherein each of the micro-LEDs comprises an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layer comprises a first electrode and a second electrode, wherein a ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer is in a range of 0.1 to 0.5;

(C) repeating the step (B) to dispose a required number of the micro-LEDs on the temporary carrier; and

(D) processing by heating and pressuring to electrically bond the micro-LEDs from the temporary carrier to the substrate, wherein the step (D) is performed after every transferring process in the step (B),

wherein the anisotropic conductive film is disposed between the first electrode and the second electrode of each of the micro-LEDs, and the electrode layer is located between the substrate and the epitaxial layer.

2. The manufacturing method of the micro-LED display panel according to claim 1 , wherein in the step (B), the micro-LEDs are aligned with a plurality of pads of the substrate respectively.

3. The manufacturing method of the micro-LED display panel according to claim 2 , wherein the step (D) is performed after transferring all the micro-LEDs required for the substrate, and the bonding layer is formed between all the micro-LEDs and the corresponding pads of the substrate.

4. The manufacturing method of the micro-LED display panel according to claim 1 , wherein in the step (D), a bonding layer is formed between one of the micro-LEDs and one of the pads to electrically connect the one of the micro-LEDs and the substrate.

5. The manufacturing method of the micro-LED display panel according to claim 1 , wherein in the step (D), the first electrode and the second electrode of each micro-LED are embedded in the anisotropic conductive film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 27, 2024
From: PLAYNITRIDE INC.
To: PLAYNITRIDE DISPLAY CO., LTD.
Reel/Frame 066912/0298 →
Priority Claims (1)
TW 106137561 · Oct 31, 2017 · national
Continuity (2)
Division 16164816 · Oct 19, 2018
Related Publication 20200373282A1 · Nov 26, 2020