Control of p-contact resistance in a semiconductor light emitting device
A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.
1. A device comprising:
a semiconductor structure comprising a light emitting layer between an n-type region and a p-type region, a surface of the p-type region comprising a first portion and a second portion, the first portion being less conductive than the second portion;
a metal n-contact on a portion of the n-type region and a first metal pad electrically connected to the metal n-contact;
a metal p-contact on the p-type region and a second metal pad electrically connected to the metal p-contact, the metal p-contact comprising:
a reflective first metal,
a second metal adjacent the reflective first metal, and
a blocking material over the first portion of the p-type region between the first and second metal pads and no blocking material over the second portion of the p-type region, the first portion of the p-type region being adjacent to the metal n-contact and the first portion is less conductive than the second portion.
2. The device of claim 1 , wherein the blocking material is an oxygen blocking material.
3. The device of claim 1 , wherein the blocking material comprises one of Co, Ni, Fe, Cu, Ti, W, Pt, Au, Ir, Ru, a conductive oxide, indium tin oxide, zinc oxide, indium zinc oxide, fluorine doped tin oxide, aluminium doped zinc oxide, and an alloy of one of Co, Ni, Fe, Cu, Ti, W, Pt, Au, Ir, and Ru.
4. The device of claim 1 , wherein the second metal is a hydrogen getter metal.
5. The device of claim 1 , wherein the second metal comprises one of Co, Ni, Fe, Cu, an alloy of Co, an alloy of Ni, an alloy of Fe, and an alloy of Cu.
6. The device of claim 1 , wherein the second metal is less oxidizable than the blocking material.
7. The device of claim 1 , wherein the second section does not include the p-type region and the light emitting layer.
8. A device comprising:
a semiconductor structure comprising:
a first section comprising a light emitting layer between a bottom surface of an n-type region and a top surface of a p-type region, and
a second section adjacent the first section comprising the n-type region;
an n-contact on the bottom surface of the n-type region in the second section and a first metal pad electrically connected to the n-contact; and
a p-contact on a bottom surface of the p-type region in the first section and a second metal pad electrically connected to the p-contact, the p-contact comprising:
a reflective first metal in ohmic contact with the p-type region,
a hydrogen getter second metal, and a blocking material under a portion of the first section that borders on the second section between the first and second metal pads and the portion of the first section is less conductive than the second section.
9. The device of claim 8 , wherein the first and second metals are between the blocking material and the p-type region.
10. The device of claim 8 , wherein a surface of the p-type region comprises a first portion and a second portion, the first portion being less conductive than the second portion, and the blocking material being below the first portion of the p-type region that is of lower conductivity.
11. The device of claim 8 , wherein the blocking material comprises an oxygen blocking material.
12. The device of claim 8 , wherein the hydrogen getter second metal comprises one of Co, Ni, Fe, Cu, an alloy of Co, an alloy of Ni, an alloy of Fe, and an alloy of Cu.
13. The device of claim 8 , wherein the blocking material comprises one of Co, Ni, Fe, Cu, Ti, W, Pt, Au, Ir, Ru, a conductive oxide, indium tin oxide, zinc oxide, indium zinc oxide, fluorine doped tin oxide, aluminium doped zinc oxide, and an alloy of one of Co, Ni, Fe, Cu, Ti, W, Pt, Au, Ir, and Ru.
14. The device of claim 8 , wherein the hydrogen getter second metal is less oxidizable than the third metal.
15. The device of claim 8 , wherein a portion of the reflective first metal above the hydrogen getter second metal has a thickness that enables passage of oxygen and a portion of the reflective first metal below the hydrogen getter material has a thickness that enables diffusion of hydrogen.
16. The device of claim 8 , wherein the reflective first metal has a total thickness that prevents diffusion of hydrogen from the p-type layer through the total thickness.