Piezoelectric micromachined ultrasonic transducer and method of fabricating the same
A PMUT includes a substrate, a stopper, and a multi-layered structure, where the substrate includes a corner, and a cavity is disposed in the substrate. The stopper is in contact with the corner of the substrate and the cavity. The multi-layered structure is disposed over the cavity and attached to the stopper and the multi-layered structure includes at least one through hole in contact with the cavity.
1. A piezoelectric micromachined ultrasonic transducer (PMUT), comprising:
a substrate comprising a corner;
a cavity disposed in the substrate and not penetrate through the substrate;
a stopper being in contact with the corner of the substrate and the cavity; and
a multi-layered structure disposed over the cavity and attached to the stopper, wherein the multi-layered structure comprises at least one through hole in contact with the cavity.
2. The PMUT of claim 1 , wherein a height of the stopper is greater than ½ of a height of the at least one through hole.
3. The PMUT of claim 1 , wherein the multi-layered structure comprises at least two electrodes and a piezoelectric layer disposed between the electrodes.
4. The PMUT of claim 1 , further comprising a dielectric layer disposed on the multi-layered structure and filled into an upper portion of the at least one through hole.
5. The PMUT of claim 1 , wherein a material of the substrate is different from a material of the stopper, and an etch selectivity of substrate to the stopper is greater than 10 when vapor fluoric acid (VHF) is used as etchant.
6. The PMUT of claim 5 , wherein the substrate is made of crystalline silicon and the stopper is made of silicon oxide.
7. The PMUT of claim 1 , wherein the at least one through hole is a circular hole, a ring-shaped hole, a polygon-shaped hole, or an arc-shaped hole.
8. The PMUT of claim 1 , wherein a lower portion of the stopper is embedded in the substrate.
9. The PMUT of claim 1 , wherein a bottom surface of the cavity is higher than a bottom surface of the stopper.
10. The PMUT of claim 1 , wherein a sidewall of the stopper is coincident with a sidewall of the cavity.
11. The PMUT of claim 1 , further comprising a dielectric layer disposed between the substrate and the multi-layered structure, wherein the dielectric layer has the same composition as the stopper.
12. The PMUT of claim 1 , further comprising another cavity disposed under and in direct contact with the cavity, wherein a diameter of the another cavity is less than a diameter of the cavity.
13. The PMUT of claim 1 , wherein an upper sidewall of the stopper is misaligned with a lower sidewall of the stopper.
14. The PMUT of claim 1 , wherein the stopper is extended to cover a top surface of the substrate.
15. The PMUT of claim 1 , wherein a portion of the cavity is under the stopper.
16. The PMUT of claim 1 , further comprising another cavity over the cavity, wherein a sidewall of the stopper is coincident with a sidewall of the another cavity.