RF BAW resonator filter architecture for 6.5GHz Wi-Fi 6E coexistence and other ultra-wideband applications
A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.
1. A multi-stage matching network filter circuit device, the device comprising:
a first resonator coupled between a first node and the input node, the first resonator comprising
a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,
a first bottom electrode within a portion of the first cavity region,
a first piezoelectric material overlying the first upper surface region and the first bottom electrode,
a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and
a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;
a second resonator coupled between the first node and a second node, the second resonator comprising
a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second cavity region and a second upper surface region contiguous with a second opening of the second cavity region,
a second bottom electrode within a portion of the second cavity region,
a second piezoelectric material overlying the second upper surface region and the second bottom electrode,
a second top electrode overlying the second piezoelectric material and overlying the second bottom electrode, and
a second insulating material overlying the second top electrode and configured with a second thickness to tune the second resonator;
a third resonator coupled between the second node and a third node, the third resonator comprising a third capacitor device, the third capacitor device comprising
a third substrate member, the third substrate member having a third cavity region and a third upper surface region contiguous with a third opening of the third cavity region,
a third bottom electrode within a portion of the third cavity region,
a third piezoelectric material overlying the third upper surface region and the third bottom electrode,
a third top electrode overlying the third piezoelectric material and overlying the third bottom electrode, and
a third insulating material overlying the third top electrode and configured with a third thickness to tune the third resonator;
a fourth resonator coupled between the third node and a fourth node, the fourth resonator comprising a fourth capacitor device, the fourth capacitor device comprising
a fourth substrate member, the fourth substrate member having a fourth cavity region and a fourth upper surface region contiguous with a fourth opening of the fourth cavity region,
a fourth bottom electrode within a portion of the fourth cavity region,
a fourth piezoelectric material overlying the fourth upper surface region and the fourth bottom electrode,
a fourth top electrode overlying the fourth piezoelectric material and overlying the fourth bottom electrode, and
a fourth insulating material overlying the fourth top electrode and configured with a fourth thickness to tune the fourth resonator;
a serial configuration comprising the input port, the first node, the first resonator, the second node, the second resonator, the third node, the third resonator, the fourth resonator, the fourth node, and the output node;
a first shunt configuration resonator coupled to the first node;
a second shunt configuration resonator coupled to the second node;
a third shunt configuration resonator coupled to the third node; and
a fourth shunt configuration resonator coupled to the fourth node;
a parallel configuration comprising the first shunt configuration resonator, the second shunt configuration resonator, the third shunt configuration resonator, and the fourth shunt configuration resonator; and
a circuit response between the input port and the output port and configured from the serial configuration and the parallel configuration to achieve a transmission loss from a pass band having a characteristic frequency centered around 6.530 GHz and having a bandwidth from 5.935 GHz to 7.125 GHz such that the characteristic frequency centered around 6.535 GHz is tuned from a lower frequency ranging from about 5.9 GHz to 6.4 GHz.
2. The device of claim 1 wherein the ground connection network circuit is configured to couple the first, second, third, and fourth shunt configuration resonators to the circuit ground node.
3. The device of claim 1 wherein the first piezoelectric material, the second piezoelectric material, the third piezoelectric material, and the fourth piezoelectric comprise a single crystal material, the single crystal material including an aluminum nitride (AlN) bearing material, an aluminum scandium nitride (AlScN) bearing material, a magnesium hafnium aluminum nitride (MgHfAlN) material, a gallium nitride (GaN) bearing material, or a gallium aluminum nitride (GaAlN) bearing material.
4. The device of claim 1 wherein the first piezoelectric material, the second piezoelectric material, the third piezoelectric material, and the fourth piezoelectric material comprise polycrystalline material, the polycrystalline material including an aluminum nitride (AlN) bearing material, an aluminum scandium nitride (AlScN) bearing material, a magnesium hafnium aluminum nitride (MgHfAlN) material, a gallium nitride (GaN) bearing material, or a gallium aluminum nitride (GaAlN) bearing material.