Antenna package with via structure and method of formation thereof
A semiconductor device comprises a semiconductor chip comprising a radio frequency (RF) circuit, a feedline structure coupled to the RF circuit, and an antenna structure comprising a main body stretching along a direction orthogonal to at least one side of a front side and a backside of the semiconductor device, wherein the antenna structure is coupled to the RF circuit through the feedline structure.
1. A semiconductor device with a front side and a backside opposite to the front side, the semiconductor device comprising:
a semiconductor chip comprising a radio frequency (RF) circuit;
a feedline structure coupled to the RF circuit; and
an antenna structure comprising a main body having a longitudinal side stretching along a direction orthogonal to at least one side of the front side and the backside of the semiconductor device, and an extended portion stretching a direction orthogonal to the direction of the main body, wherein the longitudinal side of the main body extends from the feedline structure to the at least one side of the front side and the backside of the semiconductor device, and the extended portion extends to an edge of the backside of the semiconductor device, and wherein a longitudinal side of the extended portion is coplanar to the edge of the backside of the semiconductor device, and wherein the longitudinal side of the extended portion is the longest dimension of the extended portion, and wherein the antenna structure is coupled to the RF circuit through the feedline structure.
2. The semiconductor device of claim 1 , wherein:
the antenna structure comprises at least one via capture pad connected to the feedline structure.
3. The semiconductor device of claim 2 , wherein:
the at least one via capture pad is located at one end of the main body of the antenna structure.
4. The semiconductor device of claim 2 , wherein:
the at least one via capture pad is at a location between two ends of the main body of the antenna structure.
5. The semiconductor device of claim 1 , wherein:
the main body of the antenna structure comprises at least one portion formed by a plating arranged as a sidewall of a hole of the semiconductor device.
6. The semiconductor device of claim 1 , wherein:
the feedline structure comprises a single feedline coupling the antenna structure to the RF circuit.
7. The semiconductor device of claim 1 , wherein:
the feedline structure comprises at least two feedlines coupling the antenna structure to the RF circuit.
8. A semiconductor package with a first side and a second side opposite to the first side, the semiconductor package comprising:
a semiconductor chip comprising a radio frequency (RF) circuit;
a feedline disposed over the semiconductor chip, wherein the feedline is coupled to the RF circuit; and
an antenna structure coupled to the feedline through a via capture pad, and wherein a main body of the antenna structure is in the semiconductor package and a longitudinal side of the main body is oriented along a direction orthogonal to the first side of the semiconductor package, and wherein the longitudinal side of the main body extends from the feedline to the second side of the semiconductor package, and an extended portion of the antenna structure extends to an edge of the second side of the semiconductor package, and wherein a longitudinal side of the extended portion of the antenna structure is coplanar to the edge of the second side of the semiconductor package, and wherein the longitudinal side of the extended portion of the antenna structure is the longest dimension of the extended portion.
9. The semiconductor package of claim 8 , further comprising:
a plurality of conductive layers and laminate layers disposed between the first side and the second side of the semiconductor package, wherein the conductive layers and the laminate layers are arranged in an alternating manner;
an underfill layer disposed between the semiconductor chip and the plurality of conductive layers and laminate layers; and
a plurality of input/output structures mounted on the first side of the semiconductor package, wherein the plurality of input/output structures is electrically coupled to the RF circuit through input/output bumps of the semiconductor chip.
10. The semiconductor package of claim 8 , wherein:
the main body of the antenna structure comprises at least a portion formed as a conductive surface arranged within a hole of the semiconductor package.
11. The semiconductor package of claim 8 , wherein the semiconductor chip comprises:
a substrate comprising the RF circuit;
a passivation layer over the substrate;
a buffer layer over the passivation layer; and
a plurality of bumps over the buffer layer, wherein the plurality of bumps is electrically coupled to the RF circuit.
12. A semiconductor device comprising:
a semiconductor chip comprising a radio frequency (RF) circuit;
a feedline structure coupled to the RF circuit, wherein the feedline structure is formed in an interconnect layer of an interconnect structure over the semiconductor chip; and
an antenna structure comprising a main body and an extended portion, wherein a longitudinal side of the main body of the antenna structure is formed along a direction orthogonal to a top surface of the semiconductor device, and the extended portion of the antenna structure is formed over a top surface of the interconnect structure and extends to an edge of the semiconductor device, and wherein a longitudinal side of the extended portion of the antenna structure is coplanar to the edge of the semiconductor device, and wherein the longitudinal side of the extended portion of the antenna structure is the longest dimension of the extended portion, and wherein the main body is coupled to the RF circuit through the feedline structure.
13. The semiconductor device of claim 12 , wherein:
the main body of the antenna structure comprises a via comprising a hole having a conductive sidewall, and wherein the via is connected to the feedline structure through a via capture pad.
14. The semiconductor device of claim 13 , wherein the main body of the antenna structure further comprises:
a first via cap covering a first terminal of the hole; and
a second via cap covering a second terminal of the hole.
15. The semiconductor device of claim 13 , wherein:
at least a portion of the hole is filled with a conductive material.
16. The semiconductor device of claim 12 , further comprising:
a shielding layer and a plurality of shielding vias connected to the shielding layer, wherein the extended portion is placed between the shielding layer and the edge of the semiconductor device.
17. The semiconductor device of claim 12 , wherein the interconnect structure comprises:
a plurality of conductive layers and laminate layers arranged in an alternating manner;
an underfill layer disposed between the semiconductor chip and the plurality of conductive layers and laminate layers; and
a plurality of bumps mounted on a bottom surface of the semiconductor device, and wherein the plurality of bumps of the semiconductor device is electrically coupled to the RF circuit through input/output bumps of the semiconductor chip.