Varistor for high temperature applications
The present invention is directed to a varistor comprising a dielectric material comprising a sintered ceramic composed of zinc oxide grains and a grain boundary layer between the zinc oxide grains. The grain boundary layer contains a positive temperature coefficient thermistor material in an amount of less than 10 mol % based on the grain boundary layer.
1. A varistor comprising:
alternating dielectric layers and electrode layers, wherein the electrode layers include a first active electrode electrically connected to a first external terminal and a second active electrode electrically connected to a second external terminal,
wherein the dielectric layers include a dielectric material comprising a sintered ceramic composed of zinc oxide grains and a grain boundary layer between the zinc oxide grains, wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of less than 10 mol % based on the grain boundary layer.
2. The varistor according to claim 1 , wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of from 0.1 mol % to 8 mol % based on the grain boundary layer.
3. The varistor according to claim 1 , wherein the grain boundary layer contains a positive temperature coefficient thermistor material in an amount of from 4 mol % to 6 mol % based on the grain boundary layer.
4. The varistor according to claim 1 , wherein the positive temperature coefficient thermistor material includes a titanate.
5. The varistor according to claim 4 , wherein the titanate includes a barium titanate.
6. The varistor according to claim 1 , wherein the positive temperature coefficient thermistor material includes an alkaline earth metal carbonate.
7. The varistor according to claim 6 , wherein the alkaline earth metal carbonate includes a calcium carbonate.
8. The varistor according to claim 1 , wherein the positive temperature coefficient thermistor material includes a rare earth metal oxide.
9. The varistor according to claim 8 , wherein the rare earth metal oxide includes a lanthanum oxide.
10. The varistor according to claim 1 , wherein the dielectric material includes a boron containing compound.
11. The varistor according to claim 10 , wherein the boron containing compound includes a boron acid.
12. The varistor according to claim 1 , wherein the varistor has a maximum operating temperature of from greater than 125° C. to 300° C.
13. The varistor according to claim 1 , wherein the varistor has a clamping voltage of from about 30 volts to about 75 volts at a temperature of 150° C.
14. The varistor according to claim 1 , wherein the varistor has a breakdown voltage of from about 10 volts to about 50 volts at a temperature of 150° C.
15. The varistor according to claim 1 , wherein the varistor has a breakdown voltage of 40 volts or less at a temperature of 150° C.
16. The varistor according to claim 1 , wherein the varistor has a capacitance of from about 500 pF to about 20,000 pF at a temperature of 150° C.
17. The varistor according to claim 1 , wherein the varistor exhibits a leakage current of 40 μA or less at a temperature of 150° C.
18. The varistor according to claim 1 , wherein the varistor exhibits a leakage current of 25 μA or less at a temperature of 150° C.
19. The varistor according to claim 1 , wherein the varistor exhibits a leakage current of 10 μA or less at a temperature of 150° C.
20. The varistor according to claim 1 , wherein the varistor exhibits a leakage current of 5 μA or less at a temperature of 150° C.
21. The varistor according to claim 1 , wherein the varistor exhibits a leakage current of 40 μA or less over a temperature of from 150° C. to 200° C.