IP Library Granted Patent US 11,404,474
Granted Patent B2
US 11,404,474 · App. 17/006,459 · Granted Aug 2, 2022

Light-emitting device and manufacturing method thereof

Inventors: Cheng-Yu Chen (Hsinchu, TW); Hui-Chun Yeh (Hsinchu, TW); Chien-Fu Shen (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
H01L27/156H01L33/38
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Quick Facts
Patent No.
US 11,404,474
App. No.
17/006,459
Granted
Aug 2, 2022
Kind
B2
Abstract

A light-emitting device, includes: a substrate, comprising a top surface; a first edge and a second edge opposite to the first edge; a plurality of light-emitting units arranged in N rows on the substrate, wherein the N rows comprises a first row at the first edge and a N th row at the second edge; and a plurality of connection electrodes, formed on and electrically connecting the plurality of light-emitting units; wherein the plurality of light-emitting units comprises a first light-emitting unit in the first row, and the first light-emitting unit comprises a first notch on the first edge wherein the first notch comprises a bottom composed by the top surface.

Claims (31)

1. A light-emitting device, comprising:

a substrate, comprising a top surface;

a first edge and a second edge opposite to the first edge;

a plurality of light-emitting units arranged in N rows on the substrate, wherein the N rows comprises a first row at the first edge and a N th row at the second edge; and

a plurality of connection electrodes, formed on and electrically connecting the plurality of light-emitting units;

wherein the plurality of light-emitting units comprises a first light-emitting unit in the first row, and the first light-emitting unit comprises a first notch on the first edge wherein the first notch comprises a bottom composed by the top surface.

2. The light-emitting device according to claim 1 , wherein the first light-emitting unit includes a first side wall on the first edge, the substrate includes a second side wall on the first edge; and the first side wall and the second side wall are connected and coplanar.

3. The light-emitting device according to claim 2 , wherein the first side wall connects to the first notch.

4. The light-emitting device according to claim 2 , wherein the first notch comprises a third side wall; and an included angle between the third side wall and the top surface is smaller than an included angle between the first side wall and the top surface.

5. The light-emitting device according to claim 1 , wherein:

the plurality of light-emitting units comprises a second light-emitting unit and a third light-emitting unit in the N th row;

the light-emitting device further comprises a first trench between the second light-emitting unit and the third light-emitting unit and having an imaginary extending line; and

the first notch is located on the imaginary extending line of the first trench.

6. The light-emitting device according to claim 5 , wherein the first notch comprises a maximum bottom width, the first trench comprises a minimum bottom width, and a difference between the maximum bottom width and the minimum bottom width is less than 20%.

7. The light-emitting device according to claim 5 , wherein the first notch comprises a third side wall and the first trench comprises a fourth side wall; and wherein a difference between an included angle between the third side wall and the top surface and an included angle between the fourth side wall and the top surface is less than 10%.

8. The light-emitting device according to claim 5 , wherein the second light-emitting unit comprises a fourth side wall and the substrate includes a fifth side wall on the second edge; wherein the fourth side wall and the fifth side wall are connected and coplanar.

9. The light-emitting device according to claim 5 , wherein the first light-emitting unit comprises an area different from that of the second light-emitting unit and that of the third light-emitting unit.

10. The light-emitting device according to claim 5 , wherein the first light-emitting unit comprises a shape different from that of the second light-emitting unit and that of the third light-emitting unit.

11. The light-emitting device according to claim 5 , wherein the plurality of light-emitting units comprises a first group in the first row and a second group in the N th row, a number of light-emitting units of the second group is different from a number of light-emitting units of the first group.

12. The light-emitting device according to claim 5 , wherein the plurality of connection electrodes comprises a first connection electrode electrically connecting the first light-emitting unit and the second light-emitting unit and a second connection electrode electrically connecting the first light-emitting unit and the third light-emitting unit.

13. The light-emitting device according to claim 5 , wherein the plurality of connection electrodes comprises a first connection electrode formed on the first trench and electrically connecting the second light-emitting unit and the third light-emitting unit.

14. The light-emitting device according to claim 13 , further comprising a current blocking layer between the first connection electrode and the first trench.

15. The light-emitting device according to claim 5 , wherein the second light-emitting unit comprises a second notch on the second edge.

16. The light-emitting device according to claim 15 , further comprising:

a fourth light-emitting unit in the first row and adjacent to the first light-emitting unit; and

a second trench between the first light-emitting unit and the fourth light-emitting unit;

wherein the second notch is located on an imaginary extending line of the second trench.

17. The light-emitting device according to claim 5 , wherein the first trench comprises a bottom composed by the top surface.

18. The light-emitting device according to claim 2 , wherein an included angle between the first side wall and the top surface of the substrate is greater than 80 degrees.

19. The light-emitting device according to claim 1 , wherein the first light-emitting unit comprises a first semiconductor layer, an active region and a second semiconductor layer sequentially formed on the top surface; and the first notch is in the first semiconductor layer.

20. The light-emitting device according to claim 1 , wherein the first notch comprises a third side wall and an included angle between the third side wall and the top surface is between 20 degrees and 80 degrees.

Assignments (2)
CHANGE OF NAME Recorded Feb 26, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075152/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 31, 2020
From: CHEN, CHENG-YU; YEH, HUI-CHUN; SHEN, CHIEN-FU
To: EPISTAR CORPORATION
Reel/Frame 053644/0124 →
Priority Claims (1)
TW 108131271 · Aug 30, 2019 · national
Continuity (1)
Related Publication 20210066390A1 · Mar 4, 2021