LIGHT EMITTING STRUCTURE
The invention discloses a light emitting array structure. The light emitting array structure comprising: multiple light emitting dice on a substrate; wherein each light emitting die is physical and electrical separated by a street region; and each light emitting die comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer interposed between a first surface of the first type semiconductor layer and a first surface of the second type semiconductor layer; a first reflector located above the second surface of the first type semiconductor layer, wherein the first reflector having an aperture allowing photons to escape from the second surface of the first type semiconductor layer; a second reflector located away from the first reflector and under the second surface of the second type semiconductor layer; an isolation layer formed on the sidewall surface of the first type semiconductor layer, the sidewall of the second type semiconductor layer and the sidewall of the active layer; a light collection module formed around the aperture.
1 . A light emitting array structure comprising:
multiple light emitting dice on a substrate;
wherein each light emitting die is physical and electrical separated by a street region; and each light emitting die comprising:
a first type semiconductor layer;
a second type semiconductor layer;
an active layer interposed between a first surface of the first type semiconductor layer and a first surface of the second type semiconductor layer;
a first reflector located above the second surface of the first type semiconductor layer,
wherein the first reflector having an aperture allowing photons to escape from the second surface of the first type semiconductor layer;
a second reflector located away from the first reflector and under the second surface of the second type semiconductor layer;
an isolation layer formed on the sidewall surface of the first type semiconductor layer, the sidewall of the second type semiconductor layer and the sidewall of the active layer;
a light collection module formed around the aperture.
2 . The light emitting array structure according to claim 1 , further comprising a third reflector covering the isolation layer.
3 . The light emitting array structure according to claim 1 , further comprising:
a first pad electrically connected to the first type semiconductor layer;
a second pad electrically connected to the second type semiconductor layer.
4 . The light emitting array structure according to claim 3 , further comprising:
a first bump disposed on the first pad; and
a second bump disposed on the second pad.
5 . The light emitting array structure according to claim 1 , wherein the light collection module is a micro lens.
6 . The light emitting array structure according to claim 1 , wherein the light collection module comprises a light channel tube protruding out of the first reflector.
7 . The light emitting array structure according to claim 6 , further comprising:
a polymer placed in the light channel tube.
8 . The light emitting array structure according to claim 1 , wherein the reflector is a reflection metal layer and selected at least from Al, Ag, Ni, Ti, Cr, Ni, Cu, Au.
9 . The light emitting array structure according to claim 1 , wherein the reflector is multiple dielectric layers such as a DBR (distributed Bragg reflector) structure or a resonant cavity structure.
10 . The light emitting array structure according to claim 1 , further comprising another carrier substrate underneath of the substrate.
11 . A light emitting array structure comprising:
multiple light emitting dice on a substrate;
wherein each light emitting die is physical and electrical separated by a street region; and each light emitting die comprising:
a first type semiconductor layer;
a second type semiconductor layer;
an active layer interposed between the first surface of the first type semiconductor layer and the first surface of the second type semiconductor layer;
a first reflector located above the second surface of the first type semiconductor layer,
wherein the first reflector having an aperture allowing photons to escape from the second surface of the first type semiconductor layer;
a second reflector located away from the first reflector and under the second type semiconductor layer;
a first pad electrically connected to the first type semiconductor layer;
a second pad electrically connected to the exposed etching region of the second type semiconductor layer;
an isolation layer formed on the sidewall surface of the first type semiconductor layer, the sidewall of the second type semiconductor layer and the sidewall of the active layer;
a light collection module formed around the aperture.
12 . The light emitting array structure according to claim 11 , further comprising a third reflector covering the isolation layer.
13 . The light emitting array structure according to claim 11 , each light emitting die could be a vertical cavity surface emitting laser, a laser, a light emitting diode (LED), a resonant cavity light emitting diode (RCLED), a photonic crystal LED, or a photonic crystal vertical cavity surface emitting laser.
14 . The light emitting array structure according to claim 11 , further comprising:
a first bump disposed on the first pad; and
a second bump disposed on the second pad.
15 . The light emitting array structure according to claim 11 , wherein the light collection module is a micro lens.
16 . The light emitting array structure according to claim 11 , wherein the light collection module comprises a light channel tube protruding out of the first reflector.
17 . The light emitting array structure according to claim 16 , further comprising:
a polymer placed in the light channel tube.
18 . The light emitting array structure according to claim 11 , wherein the reflector is a reflection metal layer and selected at least from Al, Ag, Ni, Ti, Cr, Ni, Cu, Au.
19 . The light emitting array structure according to claim 11 , wherein the reflector is multiple dielectric layers such as a DBR (distributed Br