Performing processing-in-memory operations related to pre-synaptic spike signals, and related methods and systems
Spiking events in a spiking neural network may be processed via a memory system. A memory system may store data corresponding to a group of destination neurons. The memory system may, at each time interval of a SNN, pass through data corresponding to a group of pre-synaptic spike events from respective source neurons. The data corresponding to the group of pre-synaptic spike events may be subsequently stored in the memory system.
1. A system, comprising:
a memory array comprising a number of memory cells at intersections of a number of word lines and a number of bit lines, wherein data written to the number of memory cells corresponds to synaptic weights values;
a driver configured to drive the number of word lines; and
circuitry comprising a sense amplifier coupled to the number of bit lines and configured to generate a spike signal of a neuron, the circuitry configured to:
receive output signals from the number of bit lines;
in response to a first signal driven on a word line of the number of word lines before generation of the spike signal of the neuron, generate a second signal with a voltage, current, or timing characteristic, or combination thereof that increases a conductance of a first memory cell of the number of memory cells according to a spike timing dependent plasticity (STDP) characteristic of the first memory cell;
in response to the first signal driven on the word line after the generation of the spike signal of the neuron, generate a third signal with a different voltage, current, or timing characteristic, or combination thereof that decreases the conductance of the first memory cell according to the STDP characteristic; and
in response to the first signal driven on the word line:
integrate current on a first bit line of the number of bit lines intersecting—
enable threshold modulation on a second bit line of the number of bit lines intersecting the word line.
2. The system of claim 1 , wherein the circuitry is further configured to, in response to the generation of the spike signal of the neuron, transmit a feedback signal to a bit line of the number of bit lines, wherein the feedback signal is a decaying bias.
3. The system of claim 2 , wherein the second signal is applied to each of the number of memory cells on the bit line.
4. The system of claim 2 , wherein the circuitry is further configured to, in response to a fourth signal driven on the word line after the generation of the spike signal of the neuron and during the decaying bias, adjust a conductance value of the first memory cell according to the decaying bias.
5. The system of claim 1 , wherein the circuitry is further configured to, in response to the generation of the spike signal of the neuron, apply a threshold modulating bias to a bit line of the number of bit lines.
6. The system of claim 5 , wherein the threshold modulating bias is applied immediately after the generation of the spike signal.
7. The system of claim 1 , wherein the circuitry is further configured to, in response to the first signal driven on the word line after the generation of the spike signal of the neuron, apply an individual decaying bias to each memory cell of the number of memory cells on a bit line of the number of bit lines.
8. The system of claim 1 , wherein the circuitry is further configured to, in response to the generation of the spike signal of the neuron, apply a decaying feedback signal to each memory cell on a bit line of the number of bit lines, wherein the decaying feedback signal emulates a decaying long-term depression (LTD) window.
9. The system of claim 1 , wherein the circuitry is further configured to, in response to the first signal driven on the word line before the generation of the spike signal of the neuron, apply another signal to one or more memory cells of the number of memory cells on the word line, wherein a conductance of the one or more memory cells returns to an original conductance state after a predetermined time duration.
10. The system of claim 1 , wherein a time stamp of the first signal is stored in one or more of the number of memory cells in the memory array.
11. The system of claim 1 , wherein the circuitry is further configured to, in response to the first signal driven on the word line:
inject current on a second memory cell of the number of memory cells on a first bit line of the number of bit lines intersecting the word line; and
adjust threshold bias on a third memory cell of the number of memory cells on a second bit line of the number of bit lines intersecting the word line.
12. The system of claim 1 , further comprising a memory controller configured to, during a long-term potentiation LTP window and in response the generation of the spike signal of the neuron, copy conductance on a second memory cell of the number of memory cells on a second bit line of the number of bit lines intersecting the word line to the first memory cell on a first bit line of the number of bit lines intersecting the word line.
13. The system of claim 1 , wherein the circuitry is further configured to integrate conductance of memory cells on a bit line of the number of bit lines.
14. The system of claim 1 , wherein the circuitry is further configured to, in response to a membrane potential of the neuron meeting a predetermined threshold based at least in part on the output signals, generate the spike signal.
15. A method, comprising:
driving a first signal on a word line;
in response to the first signal driven on the word line before generation of a spike signal of a neuron:
generating, via circuitry configured to generate the spike signal, a second signal with a voltage, current, or timing characteristic, or combination thereof that increases a conductance of a memory cell in a long-term potentiation (LTP) window of a spike timing dependent plasticity (STDP) characteristic; and
transmitting the second signal to a bit line in response to the generation of a spike signal of a neuron, wherein the memory cell is coupled to the word line and the bit line;
in response to the first signal driven on the word line after the generation of the spike signal of the neuron:
generating, via the circuitry configured to generate the spike signal, a third signal with a different voltage, current, or timing characteristic, or combination thereof that decreases the conductance of the memory cell in a long-term depression (LTD) window according to the STDP characteristic; and
transmitting the third signal to the bit line; and
in response to the generation of the spike signal of the neuron driven on the bit line, transmit a feedback signal from the circuitry to each of a plurality of memory cells on the bit line, wherein the feedback signal is a decaying bias.
16. The method of claim 15 , further comprising, in response to the first signal driven on the word line before generation of spike signal of neuron, generating a decaying signal to change conductivity of the memory cell in a decaying manner.
17. The method of claim 16 , further comprising, in response to the generation of the spike signal of the neuron and during a decaying signal, adjusting a conductance value of the memory cell according to the decaying signal, the conductivity of the memory cell, or both.
18. The method of claim 15 , further comprising, in response to the first signal driven on the word line before the generation of the spike signal of the neuron:
applying a current to a first memory cell on first bit line intersecting the word line; and
adjusting a threshold bias on a second memory cell on a second bit line intersecting the word line.
19. An electronic system, comprising:
at least one input device;
at least one output device;
at least one processor device operably coupled to the input device and the output device; and
at least one memory device operably coupled to the at least one processor device and comprising:
a memory array comprising a number of memory cells at intersections of a number of word lines and a number of bit lines, wherein data written to the number of memory cells correspond to synaptic weight values;
circuitry comprising a sense amplifier coupled to the number of bit lines and configured to generate a spike signal of a neuron, the circuitry configured to:
generate, in response to a first signal driven on a word line of the number of word lines before generation of the spike signal of the neuron, a second signal with a voltage, current, or timing characteristic, or combination thereof that increases a conductance of a memory cell of the number of memory cells;
generate, in response to the first signal driven on the word line after the generation of the spike signal of the neuron, a third signal with a different voltage, current, or timing characteristic, or combination thereof that decreases a conductance of the memory cell; and
in response to the generation of the spike signal of the neuron driven on a bit line of the number of bit lines, transmit a feedback signal from the sense amplifier to each of a plurality of memory cells on the bit line, wherein the feedback signal is a decaying bias.
20. The electronic system of claim 19 , further comprising a memory controller configured to, during a long-term potentiation (LTP) window and in response the generation of the spike signal of the neuron, copy a conductance on a second memory cell of the number of memory cells on a second bit line of the number of bit lines intersecting the word line to a first memory cell of the number of memory cells on a first bit line of the number of bit lines intersecting the word line.
21. The electronic system of claim 19 , wherein the circuitry is further configured to integrate conductance of memory cells on the bit line.
22. The electronic system of claim 19 , wherein the circuitry is further configured to, in response to a membrane potential of the neuron meeting a predetermined membrane potential threshold, generate the spike signal.