Capacitance sensing in a MEMS mirror structure

1. A micro-electromechanical system (MEMS) apparatus comprising:

a MEMS mirror structure having a rotatable mirror that produces a change in a measured capacitance corresponding to an angle of rotation;

a driving voltage source coupled to the MEMS mirror structure;

a first oxide layer below the MEMS mirror structure;

a substrate below the first oxide layer;

wherein there is a parasitic capacitance between the MEMS mirror structure and the substrate; and

an added capacitor providing an added capacitance between the substrate and a voltage source, wherein the added capacitance is a plurality of times larger than the parasitic capacitance, the added capacitor including

an added conductor around a perimeter of the MEMS mirror structure, the conductor being separated from the MEMS mirror structure, and

a DC bias voltage source connected to the conductor.

2. The micro-electromechanical system (MEMS) apparatus of claim 1 further comprising:

first and second supporting springs, wherein the first and second supporting springs have first ends, respectively, connected to first and second respective sides of the rotatable mirror, on opposite sides, to support the rotatable mirror;

first and second common terminals connected to the first and second supporting springs, respectively, on second ends of the first and second supporting springs;

a mirror mass;

a plurality of first fingers extending from the mirror mass on first and second sides orthogonal to the first and second supporting springs;

first and second bias terminals opposite the first and second sides of the mirror mass;

a plurality of second fingers extending from the first and second bias terminals, the plurality of second fingers being interleaved with the plurality of first fingers and partially overlapping the plurality of first fingers;

wherein the first oxide layer is below the first and second common terminals and the first and second bias terminals;

wherein there is a sensed capacitance (C BC ) between the common terminals (C) and the bias terminals (B), with the sensed capacitance (C BC ) being proportional to the overlap between the plurality of first fingers and the plurality of second fingers;

wherein the parasitic capacitance comprises a first parasitic capacitance (C CS ) between the common terminals and the substrate and a second parasitic capacitance (C BS ) between the bias terminals and the substrate.

3. The micro-electromechanical system (MEMS) apparatus of claim 2 wherein the added capacitance comprises a structure outside the first and second common terminals and the first and second bias terminals, in the same layer as the first and second common terminals and the first and second bias terminals.

4. The micro-electromechanical system (MEMS) apparatus of claim 2 further comprising:

a second oxide layer on an opposite side of the substrate from the first oxide layer;

a conductor layer on a side of the second oxide layer opposite the substrate; and

a connection to ground coupled to the conductor layer;

a via extending through the substrate and second oxide layer; and

a conductive connector extending through the via to connect to the conductor layer to provide the connection to ground from a same side of the MEMS apparatus as the first and second bias terminals and the first and second common terminals.

5. The micro-electromechanical system (MEMS) apparatus of claim 4 wherein the second oxide layer and the conductor layer cover an area corresponding to the mirror mass, springs, fingers, first and second common terminals, and first and second bias terminals.

6. The micro-electromechanical system (MEMS) apparatus of claim 2 further comprising a driving voltage source connected between at least one of the first and second common terminals, and at least one of the first and second bias terminals.

7. The micro-electromechanical system (MEMS) apparatus of claim 6 further comprising a sensing system connected between at least one of the first and second common terminals, and at least one of the first and second bias terminals.

8. The micro-electromechanical system (MEMS) apparatus of claim 1 wherein the voltage source is ground.

9. The micro-electromechanical system (MEMS) apparatus of claim 1 wherein the added capacitance comprises a capacitor structure outside the MEMS mirror structure, in the same layer as the MEMS mirror structure.

10. The micro-electromechanical system (MEMS) apparatus of claim 9 wherein the capacitor structure comprises a rectangular ring enclosing the MEMS mirror structure.

11. The micro-electromechanical system (MEMS) apparatus of claim 10 wherein the rectangular ring is coupled to ground, and the substrate is coupled to a DC voltage source.

12. The micro-electromechanical system (MEMS) apparatus of claim 10 wherein the rectangular ring has a width between 100-200 μm.

13. The micro-electromechanical system (MEMS) apparatus of claim 1 wherein the added capacitor further comprises:

a second oxide layer on an opposite side of the substrate from the first oxide layer;

wherein the added conductor comprises a conductor layer on a side of the second oxide layer opposite the substrate;

a connection to ground coupled to the conductor layer; and

wherein the DC bias voltage source is connected to the substrate.

14. The micro-electromechanical system (MEMS) apparatus of claim 13 wherein the conductor layer extends across an entire footprint of the MEMS mirror structure.

15. The micro-electromechanical system (MEMS) apparatus of claim 1 further comprising:

wherein the added conductor comprises a ring enclosing the MEMS mirror structure;

a ground voltage source connected to the ring.

16. The micro-electromechanical system (MEMS) apparatus of claim 15 wherein the DC bias voltage source is connected to the substrate.

17. The micro-electromechanical system (MEMS) apparatus of claim 15 wherein the ring is rectangular.