Systems and methods for assembling processor systems
This disclosure generally relates to processor systems comprising printed circuit boards, I/O chips and processor chips with mated contacts. Contacts are formed on an upper surface of a printed circuit board having a through-hole and on a processor chip inside the through-hole. The processor chip may be a superconducting quantum processor chip comprising qubits, couplers, Digital to Analog converters, QFP shift registers and analog lines. Contacts are formed on an upper surface on an I/O chip and mated with the contacts on the printed circuit board and the processor chip. Contacts may be Indium bump bonds or superconducting solder bonds. The processor chip and the I/O chip may include a shield layer, a substrate layer and a thermally conductive layer.
1. A processor system comprising:
a processor chip, the processor chip having a major face, a perimeter which bounds the major face of the processor chip and that has a set of dimensions, and a plurality of contacts, the contacts of the processor chip distributed along the perimeter of the processor chip;
a printed circuit board, the printed circuit board having a through-hole and a plurality of contacts, the through-hole having a perimeter with a set of dimensions, the dimensions of the through-hole larger than corresponding dimensions of the processor chip to receive the processor chip at least partially by the through-hole, the contacts of the printed circuit board distributed about the perimeter of the through-hole; and
an input/output (I/O) chip, the I/O chip having a major face, a perimeter which bounds the major face of the I/O chip and that has a set of dimensions that are larger than corresponding dimensions of the through-hole of the printed circuit board, a first plurality of contacts, and a second plurality of contacts, the first plurality of contacts of the I/O chip distributed along the perimeter of the I/O chip, the second plurality of contacts distributed along the perimeter of the I/O chip spaced inwardly from the first plurality of contacts with respect to the perimeter of the I/O chip, at least a portion of the major face of the I/O chip covering at least a portion of the major face of the processor chip and at least a portion of the major face of the I/O chip covering at least a portion of the major face of the printed circuit board, the first plurality of contacts of the I/O chip positioned to mate with the plurality of contacts of the printed circuit board, and the second plurality of contacts of the I/O chip positioned to mate with the plurality of contacts of the processor chip,
wherein the I/O chip further comprises a shield layer below the first and the second plurality of contacts, the shield layer comprising a first material with high critical temperature relative to a material comprising the processor chip, the shield layer pierced by superconducting vias that provide a communicative coupling to the first and the second plurality of contacts.
2. The processor system of claim 1 wherein the plurality of contacts of the processor chip, the plurality of contacts of the printed circuit board and the first and the second plurality of contacts of the I/O chip are at least one of: Indium bump bonds and superconducting solder bonds.
3. The processor system of claim 1 wherein the processor chip is a superconducting processor chip including a plurality of qubits, couplers, Digital to Analog Converters, QFP shift registers and analog lines; and the I/O chip includes Digital to Analog Converters, frequency-multiplexed resonant (FMR) read-in, frequency-multiplexed resonant (FMR) readout, microwave and analog lines.
4. The processor system of claim 1 wherein the I/O chip further comprises:
a substrate layer having a first surface that covers a second surface of the I/O chip, the second surface of the I/O chip opposed to the first surface of the I/O chip across a thickness of the I/O chip.
5. The processor system of claim 4 wherein the I/O chip further comprises a thermally conductive layer that covers a second surface of the substrate layer, the second surface of the substrate layer opposed to the first surface of the substrate layer across a thickness of the substrate layer.
6. The processor system of claim 1 wherein the first and the second plurality of contacts of the I/O chip are located in the shield layer.
7. The processor system of claim 1 wherein the processor chip further comprises a shield layer below the plurality of contacts of the processor chip, the shield layer comprising a second material with high critical temperature relative to other material comprising the processor chip, and a number of superconducting vias that through the shield layer to provide a communicatively coupling to the plurality of contacts of the processor chip, wherein the second material is different from the first material.
8. The processor system of claim 1 wherein the processor chip further comprises a substrate layer having a first surface that covers a second surface of the processor chip, the first surface of the substrate layer opposed to the first surface of the processor chip across a thickness of the processor chip.
9. The processor system of claim 8 wherein the processor chip further comprises a thermally conductive layer that covers a second surface of the substrate layer, the second surface of the substrate layer opposed to the first surface of the substrate layer across a thickness of the substrate layer.