Packaged pressure sensor device
Embodiments of a packaged electronic device and method of fabricating such a device are provided, where the packaged electronic device includes: a pressure sensor die having a diaphragm on a front side; an encapsulant material that encapsulates the pressure sensor die, wherein the front side of the pressure sensor die is exposed at a first major surface of the encapsulant material; an interconnect structure formed over the front side of the pressure sensor die and the first major surface of the encapsulant material, wherein an opening through the interconnect structure is generally aligned to the diaphragm; and a cap attached to an outer dielectric layer of the interconnect structure, the cap having a vent hole generally aligned with the opening through the interconnect structure.
1. A method for fabricating a packaged electronic device, the method comprising:
attaching a front side of a pressure sensor die to a carrier, the pressure sensor die having a diaphragm on the front side;
overmolding the pressure sensor die with an encapsulant material to form an embedded pressure sensor die, wherein the front side of the pressure sensor die is exposed at a first major surface of the encapsulant material;
removing the embedded pressure sensor die from the carrier;
forming an interconnect structure over the front side of the pressure sensor die and the first major surface of the encapsulant material, wherein an opening through the interconnect structure is generally aligned to the diaphragm; and
attaching a cap directly to an outer dielectric layer of the interconnect structure, the cap being an integral structure having a vent hole generally aligned with the opening through the interconnect structure, wherein the cap, except for the vent hole, covers an entirety of the outer dielectric layer of the interconnect structure.
2. The method of claim 1 , wherein the cap comprises a metal lid.
3. The method of claim 1 , wherein
the cap comprises a B-stage epoxy sheet; and
the method further comprises: curing the B-stage epoxy sheet after attaching the B-stage epoxy sheet to the outer dielectric layer.
4. The method of claim 1 , further comprising:
spinning a gel into the opening through the interconnect structure and curing the gel, before to attaching the cap.
5. The method of claim 1 , further comprising:
attaching a backside signal connection structure to the carrier, wherein a first surface of the backside signal connection structure is exposed at the first major surface of the encapsulant material after the overmolding.
6. The method of claim 5 , wherein
the forming the interconnect structure comprises forming a connection to the first surface of the backside signal connection structure.
7. The method of claim 5 , further comprising:
backgrinding the encapsulant material to form a second major surface of the encapsulant material before removing the embedded pressure sensor die from the carrier, wherein a second surface of the backside signal connection structure is exposed at the second major surface of the encapsulant material.
8. The method of claim 1 , wherein
the pressure sensor die further comprises at least one pad exposed at the first major surface of the encapsulant material, and
the forming the interconnect structure comprises forming a connection to the at least one pad of the pressure sensor die.
9. The method of claim 1 , further comprising:
prior to the overmolding, attaching to the carrier one or more of:
an integrated circuit (IC) component comprising a radio frequency (RF) transmitter, and a gyroscope sensor die, wherein
the forming the interconnect structure comprises forming a connection between the pressure sensor die and the one or more of the IC component and the gyroscope sensor die.
10. The method of claim 1 , wherein the opening through the interconnect structure has sloped walls formed with the encapsulant material with a narrowest portion of the opening being closest to the diaphragm on the front side of the pressure sensor die.