SWIR pcLED and perovskite type and garnet type phosphors emitting in the 1000-1700 nm range
A wavelength converting structure is disclosed, the wavelength converting structure including an SWIR phosphor material having emission wavelengths in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni 2+ , a perovskite type phosphor doped with Ni 2+ and Cr 3+ , and a garnet type phosphor doped with Ni 2+ and Cr 3+ .
1. A wavelength converting structure comprising an SWIR phosphor material having emission wavelength in the range of 1000 to 1700 nm, the SWIR phosphor material including: RET1-2pO3:Nip,Zp where RE=La, Gd, Y, Lu, Yb, Nd, Tm, or Er, or mixtures thereof, T=Al, Ga, Sc, or In, or mixtures thereof, and Z=Ti, Hf, Zr, Si, Ge, or Sn, or mixtures thereof; 0<p≤0.1.
2. The wavelength converting structure of claim 1 , wherein the SWIR phosphor comprises YAl 0.5 Ga 0.49 O 3 :Ni 0.005 ,Ge 0.005 .
3. A device comprising wavelength converting structure of claim 1 and a light source, the light source configured to emit a first light, the wavelength converting structure disposed in a path of the first light, wherein the SWIR phosphor material absorbs the first light and emits a second light, the second light having a wavelength range of 1000 to 1700 nm.
4. The device of claim 3 , wherein the light source comprises an AlInGaP LED.
5. The device of claim 3 , wherein the wavelength converting structure further comprises a second phosphor material, wherein the second phosphor material absorbs the first light emitted by the light source and emits a third light, and the SWIR phosphor material absorbs the third light and emits a second light, the second light having a wavelength range of 1000 to 1700 nm.
6. The device of claim 5 , wherein the second phosphor is a green to red emitting phosphor and the light source is a blue emitting LED.
7. The device of claim 6 , wherein the second phosphor includes at least one of (Sr,Ca)AlSiN 3 :Eu and (Ba,Sr,Ca) 2 Si 5−x Al x O x N 8−x :Eu.
8. The device of claim 7 , wherein the second phosphor includes Li 0.5−0.5x (Ga,Sc) 2.5−0.5x−y O 4 :Ni x ,Cr y (where 0≤x≤1, 0<y≤0.1) and (Ba,Sr) 2 Si 5 N 8 :Eu, and the light source is a blue light emitting InGaN LED.
9. The device of claim 7 , wherein the second phosphor includes at least one of LaMgGa 11 O 19 :Ni, MgO:Ni, MgF 2 :Ni, Ga 2 O 3 :Ni,Ge, and garnet type phosphors of composition RE 2 AEMg 2 TV 3 O 12 :Ni (RE=Y, La, Lu, Gd, Nd, Yb, Tm, Er; AE=Ca, Sr; TV=Si, Ge.
10. A wavelength converting structure comprising an SWIR phosphor material having emission wavelength in the range of 1000 to 1700 nm, the SWIR phosphor material including:
RE 3 AA 2−2q−s TT 3 O 12 :Ni q ,Z q ,Cr s where RE=La, Gd, Y, Lu, Yb, Nd, Tm, or Er, or mixtures thereof, AA=Ga, Sc, In, Al, or Lu, T=Al, or Ga, or mixtures thereof, Z=Ti, Hf, Zr, Si, Ge, or Sn, or mixtures thereof; 0<q≤0.1, 0<s≤0.2.
11. The wavelength converting structure of claim 10 , wherein the SWIR phosphor comprises at least one of Gd 3 Ga 3.82 AlO 12 :Cr 0.1 ,Ni 0.04 ,Zr 0.04 and Gd 3 Ga 3.82 AlO 12 :Ni 0.04 ,Zr 0.04 .
12. A device comprising wavelength converting structure of claim 10 and a light source, the light source configured to emit a first light, the wavelength converting structure disposed in a path of the first light, wherein the SWIR phosphor material absorbs the first light and emits a second light, the second light having a wavelength range of 1000 to 1700 nm.
13. The device of claim 12 , wherein the light source comprises an AlInGaP LED.
14. The device of claim 12 , wherein the wavelength converting structure further comprises a second phosphor material, wherein the second phosphor material absorbs the first light emitted by the light source and emits a third light, and the SWIR phosphor material absorbs the third light and emits a second light, the second light having a wavelength range of 1000 to 1700 nm.
15. The device of claim 14 , wherein the second phosphor is a green to red emitting phosphor and the light source is a blue emitting LED.
16. The device of claim 15 , wherein the second phosphor includes at least one of (Sr,Ca)AlSiN 3 :Eu and (Ba,Sr,Ca) 2 Si 5−x Al x O x N 8−x :Eu.
17. The device of claim 16 , wherein the second phosphor includes Li 0.5−0.5x (Ga,Sc) 2.5−0.5x−y O 4 :Ni x ,Cr y (where 0≤x≤1, 0<y≤0.1) and (Ba,Sr) 2 Si 5 N 8 :Eu, and the light source is a blue light emitting InGaN LED.
18. The device of claim 16 , wherein the second phosphor includes at least one of LaMgGa 11 O 9 :Ni, MgO:Ni, MgF 2 :Ni, Ga 2 O 3 :Ni,Ge, or garnets of composition RE 2 AEMg 2 TV 3 O 12 :Ni (RE=Y, La, Lu, Gd, Nd, Yb, Tm, Er; AE=Ca, Sr; TV=Si, Ge).
19. A wavelength converting structure comprising an SWIR phosphor material having emission wavelength in the range of 1000 to 1700 nm, the SWIR phosphor material including at least one of a perovskite type phosphor doped with Ni 2+ , a perovskite type phosphor doped with Ni 2+ and Cr 3+ , and a garnet type phosphor doped with Ni 2+ and Cr 3+ .