Magnetic recording devices using virtual side shields for improved areal density capability
Embodiments of the present disclosure generally relate to a magnetic media drive employing a magnetic recording device. The magnetic recording device comprises a trailing gap disposed adjacent to a first surface of a main pole, a first side gap disposed adjacent to a second surface of the main pole, a second side gap disposed adjacent to a third surface of the main pole, and a leading gap disposed adjacent to a fourth surface of the main pole. A side shield surrounds the main pole and comprises a heavy metal first layer and a magnetic second layer. The first layer surrounds the first, second, and third surfaces of the main pole, or the second, third, and fourth surfaces of the main pole. The second layer surrounds the second and third surfaces of the main pole, and may further surround the fourth surface of the main pole.
1. A magnetic recording device, comprising:
a main pole having a first surface adjacent to a trailing gap, a second surface adjacent to the first surface, a third surface opposite the second surface, and a fourth surface adjacent to a leading gap;
a trailing shield disposed adjacent to the trailing gap; and
a side shield comprising a first layer surrounding the first surface, the second surface, and the third surface of the main pole, and a second layer surrounding surfaces of the main pole consisting of the second surface and the third surface, the second layer being disposed in contact with the first layer, wherein the first layer comprises beta phase tungsten (β-W), Pt, or beta phase tantalum (β-Ta), and wherein the second layer comprises CoFe, CoIr, NiFe, or a CoFeX alloy, where X is B, Ta, Re, or Ir.
2. The magnetic recording device of claim 1 , wherein the first layer is spaced from the second surface and the third surface.
3. The magnetic recording device of claim 1 , wherein the first layer has a thickness between about 1 nm to about 9 nm, and the second layer has a thickness between about 2 nm to about 10 nm.
4. The magnetic recording device of claim 1 , further comprising an energy assisted-magnetic recording stack disposed between the main pole and the trailing shield.
5. The magnetic recording device of claim 1 , wherein the trailing shield comprises NiFe.
6. The magnetic recording device of claim 1 , further comprising a hot seed layer disposed between the trailing shield and the trailing gap.
7. The magnetic recording device of claim 6 , wherein the hot seed layer comprises a high moment material.
8. The magnetic recording device of claim 7 , wherein the high moment material comprises CoFeN or FeXN, where X includes at least one of Rh, Al, Ta, Zr, and Ti.
9. A data storage device comprising the magnetic recording device of claim 1 .
10. A magnetic recording device, comprising:
a main pole having a first surface adjacent to a trailing gap, a second surface adjacent to the first surface and a first side gap, and a third surface opposite the second surface adjacent to a second side gap; and
a side shield comprising a first layer surrounding surfaces of the main pole consisting of the first surface, the second surface, and the third surface, and a second layer surrounding surfaces of the main pole consisting of the second surface and the third surface, wherein:
the first surface is disposed adjacent to the trailing gap and the first and second side gaps,
the second layer is disposed in contact with the first layer, and
when a bias current is applied to the first layer, a magnetization direction of the second layer is switched to be opposite a magnetization direction of the main pole.
11. The magnetic recording device of claim 10 , wherein the first layer comprises beta phase tungsten (β-W), Pt, or beta phase tantalum (β-Ta), and wherein the second layer comprises CoFe, Coir, NiFe, or a CoFeX alloy, where X is B, Ta, Re, or Ir.
12. The magnetic recording device of claim 10 , wherein the first layer has a thickness between about 1 nm to about 9 nm, and the second layer has a thickness between about 2 nm to about 10 nm.
13. The magnetic recording device of claim 10 , further comprising:
a trailing shield disposed adjacent to the trailing gap; and
an energy assisted-magnetic recording stack disposed between the main pole and the trailing shield.
14. The magnetic recording device of claim 13 , wherein a portion of the first layer functions as a layer of the energy assisted-magnetic recording stack.
15. The magnetic recording device of claim 13 , further comprising a hot seed layer disposed between the trailing shield and the trailing gap, wherein the hot seed layer comprises a high moment material.
16. The magnetic recording device of claim 15 , wherein the high moment material comprises CoFeN or FeXN, where X includes at least one of Rh, Al, Ta, Zr, and Ti.
17. A data storage device comprising the magnetic recording device of claim 10 .
18. A magnetic recording device, comprising:
a main pole having a first surface adjacent to a trailing gap, a second surface adjacent to the first surface, a third surface opposite the second surface, and a fourth surface adjacent to a leading gap;
a trailing shield disposed adjacent to the trailing gap; and
a side shield comprising a first layer surrounding the first surface, the second surface, and the third surface of the main pole, and a second layer surrounding surfaces of the main pole consisting of the second surface and the third surface, wherein the first layer contacts the first surface, and wherein the first layer is spaced from the second surface and the third surface.
19. A magnetic recording device, comprising:
a main pole having a first surface adjacent to a trailing gap, a second surface adjacent to the first surface, a third surface opposite the second surface, and a fourth surface adjacent to a leading gap;
a trailing shield disposed adjacent to the trailing gap; and
a side shield comprising a first layer surrounding the first surface, the second surface, and the third surface of the main pole, and a second layer surrounding surfaces of the main pole consisting of the second surface and the third surface, wherein when a bias current is applied to the first layer, a magnetization direction of the second layer is switched to be opposite a magnetization direction of the main pole.