IP Library Granted Patent US 11,532,458
Granted Patent B2
US 11,532,458 · App. 17/045,762 · Granted Dec 20, 2022

Active gas generation apparatus

Inventors: Ren Arita (Tokyo, JP); Kensuke Watanabe (Tokyo, JP); Shinichi Nishimura (Tokyo, JP)
Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
H01J37/32348H01J37/3255H01J37/32357H01J37/32541H01J2237/327
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Quick Facts
Patent No.
US 11,532,458
App. No.
17/045,762
Filed
Oct 7, 2020
Granted
Dec 20, 2022
Kind
B2
Art Unit
2844
USPC
315/111.21
Abstract

In the present invention, a high-voltage side electrode component further includes a conductive film disposed on an upper surface of a dielectric electrode independently of a metal electrode. The conductive film is disposed between at least one gas ejection port and the metal electrode in plan view, and the conductive film is set to ground potential.

Claims (15)

1. An active gas generation apparatus generating active gas obtained by activating source gas supplied to a discharge space, said active gas generation apparatus comprising:

a first electrode component; and

a second electrode component disposed below said first electrode component, wherein

said first electrode component includes a first dielectric electrode and a first metal electrode disposed on an upper surface of said first dielectric electrode, said second electrode component includes a second dielectric electrode and a second metal electrode disposed on a lower surface of said second dielectric electrode, an AC voltage is applied across said first metal electrode and said second metal electrode, and, in a dielectric space in which said first dielectric electrode and said second dielectric electrode oppose each other, a region in which said first metal electrode and said second metal electrode overlap each other in plan view is included as said discharge space,

said second dielectric electrode has at least one gas ejection port to externally jet said active gas, and a path from said discharge space to said at least one gas ejection port is defined as an active gas flow path,

said active gas generation apparatus further includes

an orifice part disposed in said second dielectric electrode itself or below said second dielectric electrode, and having at least one through hole

corresponding to said at least one gas ejection port,

said first electrode component further includes

an auxiliary conductive film disposed on said upper surface of said first dielectric electrode independently of said first metal electrode, said auxiliary conductive film and said first metal electrode are disposed by a predetermined distance, and

said auxiliary conductive film is disposed to overlap a portion of said active gas flow path in plan view, and is set to ground potential.

2. The active gas generation apparatus according to claim 1 , wherein

a constituent material of said orifice part includes at least one of ceramic, glass, and sapphire.

3. The active gas generation apparatus according to claim 1 , wherein

said source gas is gas containing at least one of hydrogen, nitrogen, oxygen, fluorine, and chlorine gas.

Assignments (2)
CHANGE OF NAME Recorded Apr 26, 2024
From: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
To: TMEIC CORPORATION
Reel/Frame 067244/0359 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2020
From: ARITA, REN; WATANABE, KENSUKE; NISHIMURA, SHINICHI
To: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
Reel/Frame 054000/0374 →
Continuity (1)
Related Publication 20210057192A1 · Feb 25, 2021
Cited By (1)
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