BAW resonator with improved power durability and heat resistance and RF filter comprising a BAW resonator
A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL 2 ) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.
1. A bulk acoustic wave (BAW) resonator, comprising:
a layer stack with a bottom electrode, a top electrode and a piezoelectric material between the bottom electrode and the top electrode; and
a shunt path, parallel to the layer stack, connecting a ground potential to at least one of the top electrode or the bottom electrode, wherein the shunt path has a temperature dependent conductance configured to enable a radio frequency (RF) signal to bypass the layer stack or permit the RF signal to be input into the layer stack depending on a temperature of the shunt path.
2. The BAW resonator of claim 1 , further comprising an acoustic mirror below the bottom electrode, wherein the acoustic mirror establishes an element of the shunt path.
3. The BAW resonator of claim 1 , wherein:
the BAW resonator is arranged on a carrier substrate, and
the carrier substrate establishes an element of the shunt path.
4. The BAW resonator of claim 1 , further comprising a protection element, wherein the protection element establishes an element of the shunt path.
5. The BAW resonator of claim 1 , wherein the BAW resonator is arranged on a carrier substrate comprising Silicon.
6. The BAW resonator of claim 5 , wherein the Silicon is doped Silicon.
7. The BAW resonator of claim 6 , wherein the doped Silicon has a conductivity below 10-3 1/Ω cm at temperatures below 100° C. and a conductivity above 10-3 1/Ω cm at temperatures above 200° C.
8. The BAW resonator of claim 1 , wherein a Silicon Oxide layer is arranged between the bottom electrode and a carrier substrate.
9. The BAW resonator of claim 8 , wherein the Silicon Oxide layer has a thickness between 100 nm and 600 nm.
10. The BAW resonator of claim 1 , wherein the temperature dependent conductance of the shunt path is configured to:
enable the RF signal to bypass the layer stack when the temperature of shunt path exceeds a temperature threshold; and
permit the RF signal to be input into the layer stack when the temperature of the shunt path is less than or equal to the temperature threshold.
11. The BAW resonator of claim 1 , wherein the shunt path comprises a section with a doping level different from a surrounding of the section.
12. A radio frequency (RF) filter, comprising:
a bulk acoustic wave (BAW) resonator, the BAW resonator comprising:
a layer stack with a bottom electrode, a top electrode and a piezoelectric material between the bottom electrode and the top electrode; and
a shunt path, parallel to the layer stack, connecting a ground potential to at least one of the top electrode or the bottom electrode, wherein the shunt path has a temperature dependent conductance configured to enable an RF signal to bypass the layer stack or permit the RF signal to be input into the layer stack depending on a temperature of the shunt path.
13. The RF filter of claim 12 , comprising an acoustic mirror below the bottom electrode, wherein the acoustic mirror establishes an element of the shunt path.
14. The RF filter of claim 12 , wherein:
the BAW resonator is arranged on a carrier substrate, and
the carrier substrate establishes an element of the shunt path.
15. The RF filter of claim 12 , further comprising a protection element, wherein the protection element establishes an element of the shunt path.
16. The RF filter of claim 12 , wherein the BAW resonator is arranged on a carrier substrate comprising Silicon.
17. The RF filter of claim 16 , wherein the Silicon is doped Silicon, and the doped Silicon has a conductivity below 10-3 1/Ω cm at temperatures below 100° C. and a conductivity above 10-3 1/Ω cm at temperatures above 200° C.
18. The RF filter of claim 12 , wherein the shunt path comprises a section with a doping level different from a surrounding of the section.
19. The RF filter of claim 12 , wherein a Silicon Oxide layer is arranged between the bottom electrode and a carrier substrate.
20. The RF filter of claim 19 , wherein the Silicon Oxide layer has a thickness between 100 nm and 600 nm.