Optoelectronic semiconductor device comprising a first and a second current spreading structure

1. An optoelectronic semiconductor device comprising:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type arranged over a substrate;

wherein the first semiconductor layer is arranged between the second semiconductor layer and the substrate;

a first current spreading structure electrically connected to the first semiconductor layer;

a second current spreading structure electrically connected to the second semiconductor layer;

wherein the first current spreading structure is arranged at a larger distance from the first semiconductor layer than the second current spreading structure;

an insulating intermediate layer arranged between the second current spreading structure and the second semiconductor layer; wherein the insulating intermediate layer comprises a dielectric mirror layer, and wherein the first current spreading structure and the second current spreading structure overlap one another in a plane perpendicular to a main surface of the substrate; and

wherein the optoelectronic semiconductor device is configured to emit radiation via a main surface of the optoelectronic semiconductor device facing away from the substrate.

2. The optoelectronic semiconductor device according to claim 1 , wherein the insulating intermediate layer is interrupted in sections.

3. The optoelectronic semiconductor device according to claim 1 , wherein the first dielectric mirror layer directly contacts the second current spreading structure.

4. The optoelectronic semiconductor device according to claim 1 , wherein the first current spreading structure is connected to the first semiconductor layer via contact elements.

5. The optoelectronic semiconductor device according to claim 4 , wherein the contact elements penetrate the second current spreading structure.

6. The optoelectronic semiconductor device according to claim 4 , further comprising a vertical dielectric mirror layer arranged on the side walls of the contact elements.

7. The optoelectronic semiconductor device according to claim 1 , further comprising a first transparent conductive layer in an area outside the first current spreading structure and the second current spreading structure.

8. The optoelectronic semiconductor device according to claim 5 , wherein the first transparent conductive layer is arranged in a plane between the first current spreading structure and the second current spreading structure.

9. The optoelectronic semiconductor device according to claim 8 , further comprising:

a second transparent conductive layer arranged between the second semiconductor layer and the first transparent conductive layer; and

an insulating intermediate layer arranged between the first transparent conductive layer and the second transparent conductive layer.

10. The optoelectronic semiconductor device according to claim 1 , further comprising a second dielectric mirror layer arranged between the first current spreading structure and the second current spreading structure.

11. The optoelectronic semiconductor device according to claim 10 , wherein the second dielectric mirror layer directly contacts the first current spreading structure.

12. The optoelectronic semiconductor device according to claim 1 , further comprising a third dielectric mirror layer arranged over the first current spreading structure.

13. The optoelectronic semiconductor device according to claim 1 , further comprising an insulating layer between the first current spreading structure and the second current spreading structure, the insulating layer comprising a converter material.

14. The optoelectronic semiconductor device according to claim 13 , wherein the converter material comprises quantum dots, quantum wells, quantum wires, or combinations thereof.

15. The optoelectronic semiconductor device according to claim 13 , wherein the converter material comprises an epitaxially grown semiconductor layer.

16. The optoelectronic semiconductor device according to claim 1 , further comprising a nanostructured outcoupling layer over the second semiconductor layer.

17. The optoelectronic semiconductor device according to claim 1 , further comprising:

a first contact region contacting the first current spreading structure; and

a second contact region contacting the second current spreading structure, wherein the first contact region and the second contact region protrude from a surface of the optoelectronic semiconductor device.

18. An optoelectronic device comprising:

an optoelectronic semiconductor device according to claim 1 ; and

a carrier, wherein the optoelectronic semiconductor device is connected to the carrier in such a manner that the second semiconductor layer is arranged at a shorter distance from the carrier than the first semiconductor layer.