Process liquid composition for extreme ultraviolet lithography and pattern forming method using same
A processing solution composition for reducing micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, and 98 to 99.9998 wt % of water, reduces the number of micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source, and has a low LWR (Line Width Roughness) value, thus effectively improving the uniformity of the pattern.
1. A method of forming a photoresist pattern, comprising:
(a) forming a photoresist film by applying a photoresist on a semiconductor substrate;
(b) forming a photoresist pattern by exposing and developing the photoresist film; and
(c) cleaning the photoresist pattern with a processing solution composition for photolithography,
wherein the processing solution composition for reducing micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source comprises:
0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16;
0.0001 to 1 wt % of an alkaline material; and
98 to 99.9998 wt % of water.
2. The method of claim 1 , wherein the exposing is performed using an extreme-ultraviolet exposure source.
3. The method of claim 1 , wherein the nonionic surfactant is selected from the group consisting of polyoxyethylene alkyl ether, polyoxypropylene alkyl ether, polyoxyethylene oxypropylene alkyl ether, and mixtures thereof.
4. The method of claim 1 , wherein the nonionic surfactant is polyoxyethylene alkyl ether.
5. The method of claim 1 , wherein the HLB value of the nonionic surfactant is in a range of 12 to 16.
6. The method of claim 1 , wherein the alkaline material is selected from the group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof.
7. The method of claim 1 , wherein the alkaline material is tetrabutylammonium hydroxide.