Light-emitting device having package structure with quantum dot material and manufacturing method thereof
A light-emitting device includes a light-emitting unit comprising a top surface and a first side surface; a light-transmitting layer covers the top surface and the first side surface; a wavelength conversion structure disposed on the light-transmitting layer; a protective layer covering the second side surface and the light-transmitting layer; and a reflective layer surrounding the protective layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface.
1. A light-emitting device, comprising:
a light-emitting unit comprising a top surface and a first side surface;
a light-transmitting layer covers the top surface and the first side surface;
a wavelength conversion structure disposed on the light-transmitting layer, comprising a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, the wavelength conversion layer, the first barrier layer, and the second barrier layer are collectively formed a second side surface; and
a protective layer covering the second side surface and the light-transmitting layer; and
a reflective layer surrounding the protective layer.
2. The light-emitting device according to claim 1 , wherein the protective layer comprises a first portion located between the reflective layer and the light-transmitting layer.
3. The light-emitting device according to claim 1 , wherein the protective layer comprises a second portion located between the second side surface and the reflective layer.
4. The light-emitting device according to claim 1 , wherein the wavelength conversion structure has a topmost surface and the protective layer is inclined to the topmost surface of the wavelength conversion structure.
5. The light-emitting device according to claim 1 , further comprising an area ratio of the wavelength conversion structure to the light-emitting unit in a range of 1.5˜10 in a top view.
6. The light-emitting device according to claim 1 , wherein the second side surface is an inclined surface.
7. The light-emitting device according to claim 1 , wherein the protective layer comprises metal.
8. The light-emitting device according to claim 1 , wherein the second barrier layer is directly in contact with the light-transmitting layer.
9. The light-emitting device according to claim 1 , wherein wavelength conversion structure is a trapezoid.
10. The light-emitting device according to claim 1 , wherein the wavelength conversion layer comprises the quantum dot material.