Heterostructure including a semiconductor layer with graded composition
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.
1. A heterostructure comprising:
a group III nitride active region including at least one quantum well and at least one barrier;
a group III nitride p-type contact layer having a p-type doping, the p-type contact layer located on a first side of the active region; and
a group III nitride electron blocking layer located between the active region and the p-type contact layer, wherein the electron blocking layer has a composition profile that includes a region of graded transition located immediately adjacent to the active region, the region of graded transition having an alloy composition that continuously increases in a direction away from the active region from a composition approximately comparable to one of: the at least one quantum well or the at least one barrier in the active region to a peak alloy composition for the electron blocking layer, wherein the peak alloy composition is located closer to an active region side of the group III nitride electron blocking layer than a p-type contact layer side of the group III nitride electron blocking layer.
2. The heterostructure of claim 1 , wherein a composition of the region of graded transition increases linearly.
3. The heterostructure of claim 1 , wherein a composition of the region of graded transition increases nonlinearly.
4. The heterostructure of claim 1 , wherein the region of graded transition starts from a composition comparable to a last quantum well in the active region.
5. The heterostructure of claim 1 , wherein the region of graded transition starts from a composition comparable to a last barrier in the active region.
6. The heterostructure of claim 1 , wherein the composition profile of the electron blocking layer continuously changes across an entire thickness of the electron blocking layer.
7. The heterostructure of claim 1 , wherein the composition profile of the electron blocking layer includes a region of constant composition that is located adjacent to the region of graded transition.
8. The heterostructure of claim 1 , further comprising a group III nitride p-type interlayer located between the electron blocking layer and the p-type contact layer.
9. The heterostructure of claim 8 , wherein the p-type interlayer includes a region of linearly graded transition.
10. The heterostructure of claim 9 , wherein the p-type interlayer includes a region of constant composition located adjacent to the region of linearly graded transition.
11. The heterostructure of claim 10 , further comprising a sharp difference between a composition of the region of constant composition in the p-type interlayer and a composition of the p-type contact layer.
12. A heterostructure comprising:
a group III nitride active region including at least one quantum well and at least one barrier;
a group III nitride p-type contact layer having a p-type doping, the p-type contact layer located on a first side of the active region;
a group III nitride electron blocking layer located between the active region and the p-type contact layer, wherein a region of the electron blocking layer immediately adjacent to the active region includes a graded transition that increases in a direction away from the active region to a peak alloy composition for the electron blocking layer; and
a group III nitride p-type interlayer located between the electron blocking layer and the p-type contact layer, wherein the p-type interlayer includes a region of linearly graded transition and a region of constant composition located adjacent to the region of linearly graded transition, wherein the region of constant composition is located immediately adjacent to the p-type contact layer.
13. The heterostructure of claim 12 , wherein the region of linearly graded transition of the p-type interlayer starts with a composition comparable to a composition of the electron blocking layer.
14. The heterostructure of claim 12 , wherein the p region of constant composition has a composition that is higher than a composition of the p-type contact layer.
15. The heterostructure of claim 14 , further comprising a sharp difference between the composition of the region of constant composition in the p-type interlayer and the composition of the p-type contact layer.
16. The heterostructure of claim 12 , wherein the region of graded transition that increases in a direction away from the active region transitions from a composition comparable to one of: the at least one quantum well or the as least one barrier in the active region.
17. The heterostructure of claim 16 , wherein a composition of the region of graded transition of the electron blocking layer increases linearly.
18. The heterostructure of claim 16 , wherein a composition of the region of graded transition of the electron blocking layer increases nonlinearly.
19. A heterostructure comprising:
a group III nitride active region including at least one quantum well and at least one barrier;
a group III nitride n-type contact layer having an n-type doping, the n-type contact layer located on a first side of the active region;
a group III nitride p-type contact layer having a p-type doping, the p-type contact layer located on a second side of the active region opposite the first side;
a group III nitride electron blocking layer located between the active region and the p-type contact layer; and
a group III nitride p-type interlayer located between the electron blocking layer and the p-type contact layer, wherein the p-type interlayer includes a region of linearly graded transition and a region of constant composition located adjacent to the region of linearly graded transition, wherein the region of constant composition is located immediately adjacent to the p-type contact layer.
20. The heterostructure of claim 19 , further comprising a sharp difference between a composition of the region of constant composition in the p-type interlayer and a composition of the p-type contact layer.