Integrated circuitry comprising a memory array comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
A method used in forming a memory array comprising strings of memory cells comprises forming an upper stack directly above a lower stack. The lower stack comprises vertically-alternating lower-first-tiers and lower-second-tiers. The upper stack comprises vertically-alternating upper-first-tiers and upper-second-tiers. Lower channel openings extend through the lower-first-tiers and the lower-second-tiers. The lower channel openings have sacrificial material therein. An upper of the lower-second-tiers or a lower of the upper-second-tiers comprises non-stoichiometric silicon dioxide that has a silicon-to-oxygen atomic ratio greater than 0.5. A higher of the upper-second-tiers that is above said lower upper-second-tier comprises silicon dioxide that has a silicon-to-oxygen atomic ratio less than or equal to 0.5. Upper channel openings are etched through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-second-tier or said lower upper-second-tier. After the stop, the sacrificial material is removed from the lower channel openings and channel-material strings are formed in the upper and lower channel openings. Other embodiments, including structure independent of method, are disclosed.
1. A method used in forming a memory array comprising strings of memory cells, comprising:
forming an upper stack directly above a lower stack, the lower stack comprising vertically-alternating lower-first-tiers and lower-second-tiers, the upper stack comprising vertically-alternating upper-first-tiers and upper-second-tiers, lower channel openings extending through the lower-first-tiers and the lower-second-tiers, the lower channel openings having sacrificial material therein;
an upper tier of the lower-second-tiers or a lower tier of the upper-second-tiers comprising non-stoichiometric silicon dioxide having a silicon-to-oxygen atomic ratio greater than 0.5, a higher tier of the upper-second-tiers that is above said lower upper-second-tier comprising silicon dioxide having a silicon-to-oxygen atomic ratio less than or equal to 0.5;
etching upper channel openings through the upper-first-tiers and the upper-second-tiers to stop on said upper lower-second-tier or said lower upper-second-tier; and
after the stop, removing the sacrificial material from the lower channel openings and forming channel-material strings in the upper and lower channel openings.
2. The method of claim 1 wherein the non-stoichiometric silicon dioxide has silicon-to-oxygen atomic ratio no greater than 1.0.
3. The method of claim 1 wherein the upper tier of the lower-second-tiers comprises the non-stoichiometric silicon dioxide.
4. The method of claim 3 wherein the upper tier of the lower-second-tiers is the uppermost tier of the lower-second-tiers.
5. The method of claim 3 wherein multiple of the upper lower-second-tiers comprise the non-stoichiometric silicon dioxide.
6. The method of claim 1 wherein the lower tier of the upper-second-tiers comprises the non-stoichiometric silicon dioxide.
7. The method of claim 6 wherein the lower tier of the upper-second-tiers is the lowest tier of the upper-second-tiers.
8. The method of claim 6 wherein multiple of the lower upper-second-tiers comprise the non-stoichiometric silicon dioxide.
9. The method of claim 1 wherein each of the upper tiers of the lower-second-tiers and the lower tiers of the upper-second-tiers comprises the non-stoichiometric silicon dioxide.
10. The method of claim 1 wherein the etching the upper channel openings to the stop exposes the sacrificial material.
11. The method of claim 1 wherein the etching the upper channel openings to the stop does not expose the sacrificial material, and further comprising thereafter etching through said upper lower-second-tier or said lower upper-second-tier to expose the sacrificial material.