Semiconductor device with thin redistribution layers
A semiconductor device with thin redistribution layers is disclosed and may include forming a first redistribution layer on a dummy substrate, electrically coupling a semiconductor die to the first redistribution layer, and forming a first encapsulant layer on the redistribution layer and around the semiconductor die. The dummy substrate may be removed thereby exposing a second surface of the first redistribution layer. A dummy film may be temporarily affixed to the exposed second surface of the redistribution layer and a second encapsulant layer may be formed on the exposed top surface of the semiconductor die, a top surface and side edges of the first encapsulant layer, and side edges of the first redistribution layer. The dummy film may be removed to again expose the second surface of the first redistribution layer, and a second redistribution layer may be formed on the first redistribution layer and on the second encapsulant layer.
1. A semiconductor device comprising:
a first signal distribution structure (SDS1) comprising a top SDS1 side and a bottom SDS1 side, the first signal distribution structure (SDS1) comprising:
a plurality of SDS1 dielectric layers; and
a plurality of SDS1 conductive layers comprising:
an SDS1 conductive via; and
an SDS1 laterally-running trace connected to the SDS1 conductive via;
a first semiconductor die on the top SDS1 side;
a second semiconductor die on the top SDS1 side;
a first material on the top SDS1 side, where the first material laterally surrounds the first and second semiconductor dies;
a second signal distribution structure (SDS2) comprising a top SDS2 side that faces the bottom SDS1 side, and comprising a bottom SDS2 side, the second signal distribution structure (SDS2) comprising:
a plurality of SDS2 dielectric layers; and
a plurality of SDS2 conductive layers comprising:
an SDS2 conductive via; and
an SDS2 laterally-running trace connected to the SDS2 conductive via; and
a second material on the top SDS2 side, where:
the second material laterally surrounds the first material and the first signal distribution structure; and
the second material comprises an epoxy or a paste, directly coupled to the top SDS2 side.
2. The semiconductor device of claim 1 , comprising an underfill material comprising:
a first underfill portion that is directly vertically between the first semiconductor die and the top SDS1 side;
a second underfill portion that is directly vertically between the second semiconductor die and the top SDS1 side; and
a third underfill portion that is directly laterally between the first semiconductor die and the second semiconductor die.
3. The semiconductor device of claim 1 , comprising a plated metal interface, where the first signal distribution structure and the second signal distribution structure are electrically connected to each other through the plated metal interface.
4. The semiconductor device of claim 1 , wherein the bottom SDS1 side comprises an etched surface.
5. The semiconductor device of claim 1 , wherein the first signal distribution structure (SDS1) comprises a lateral SDS1 side, and the first material comprises a first lateral side that is flush with the lateral SDS1 side.
6. The semiconductor device of claim 5 , wherein the second signal distribution structure (SDS2) comprises a lateral SDS2 side, and the second material comprises a second lateral side that is flush with the lateral SDS2 side.
7. The semiconductor device of claim 1 , wherein said epoxy or paste of the second material is directly coupled to a top side of the first semiconductor die, a top side of the second semiconductor die, and a top side of the first material.
8. The semiconductor device of claim 1 , wherein the second material contacts the first material and laterally surrounds an entirety of the first material.
9. A semiconductor device comprising:
a first signal distribution structure (SDS1) comprising a top SDS1 side and a bottom SDS1 side, the first signal distribution structure (SDS1) comprising:
a plurality of SDS1 dielectric layers; and
a plurality of SDS1 conductive layers comprising:
an SDS1 conductive via; and
an SDS1 laterally-running trace connected to the SDS1 conductive via;
a first semiconductor die on the top SDS1 side;
a second semiconductor die on the top SDS1 side;
a first material on the top SDS1 side, where the first material laterally surrounds the first and second semiconductor dies;
a second signal distribution structure (SDS2) comprising a top SDS2 side that faces the bottom SDS1 side, and comprising a bottom SDS2 side, the second signal distribution structure (SDS2) comprising:
a plurality of SDS2 dielectric layers; and
a plurality of SDS2 conductive layers comprising:
an SDS2 conductive via; and
an SDS2 laterally-running trace connected to the SDS2 conductive via; and
a second material on the top SDS2 side, where:
the second material laterally surrounds the first material and the first signal distribution structure, and
the second material comprises an epoxy or a paste, directly coupled to a top side of the first semiconductor die, a top side of the second semiconductor die, and a top side of the first material.
10. The semiconductor device of claim 9 , comprising an underfill material comprising:
a first underfill portion that is directly vertically between the first semiconductor die and the top SDS1 side;
a second underfill portion that is directly vertically between the second semiconductor die and the top SDS1 side; and
a third underfill portion that is directly laterally between the first semiconductor die and the second semiconductor die.
11. The semiconductor device of claim 9 , comprising a plated metal interface, where the first signal distribution structure and the second signal distribution structure are electrically connected to each other through the plated metal interface.
12. The semiconductor device of claim 9 , wherein the bottom SDS1 side comprises an etched surface.
13. The semiconductor device of claim 9 , wherein the first signal distribution structure (SDS1) comprises a lateral SDS1 side, and the first material comprises a first lateral side that is flush with the lateral SDS1 side.
14. The semiconductor device of claim 13 , wherein the second signal distribution structure (SDS2) comprises a lateral SDS2 side, and the second material comprises a second lateral side that is flush with the lateral SDS2 side.
15. A method of manufacturing a semiconductor device, the method comprising:
receiving a first signal distribution structure (SDS1) comprising a top SDS1 side and a bottom SDS1 side, the first signal distribution structure (SDS1) comprising:
a plurality of SDS1 dielectric layers; and
a plurality of SDS1 conductive layers comprising:
an SDS1 conductive via; and
an SDS1 laterally-running trace connected to the SDS1 conductive via;
mounting a first semiconductor die on the top SDS1 side;
mounting a second semiconductor die on the top SDS1 side;
providing a first material on the top SDS1 side, where the first material laterally surrounds the first and second semiconductor dies;
providing a second signal distribution structure (SDS2) comprising a top SDS2 side that faces the bottom SDS1 side, and comprising a bottom SDS2 side, the second signal distribution structure (SDS2) comprising:
a plurality of SDS2 dielectric layers; and
a plurality of SDS2 conductive layers comprising:
an SDS2 conductive via; and
an SDS2 laterally-running trace connected to the SDS2 conductive via; and
providing a second material on the top SDS2 side, where:
the second material laterally surrounds the first material and the first signal distribution structure, and
the second material comprises an epoxy or a paste, directly coupled to the top SDS2 side.
16. The method of claim 15 , comprising providing a plated metal interface, where the first signal distribution structure and the second signal distribution structure are electrically connected to each other through the plated metal interface.
17. The method of claim 15 , wherein the bottom SDS1 side comprises an etched surface.
18. The method of claim 15 , wherein the first signal distribution structure (SDS1) comprises a lateral SDS1 side, and the first material comprises a first lateral side that is coplanar with the lateral SDS1 side.
19. The method of claim 18 , wherein the second signal distribution structure (SDS2) comprises a lateral SDS2 side, and the second material comprises a second lateral side that is coplanar with the lateral SDS2 side.
20. The method of claim 15 , wherein the epoxy or paste of the second material is directly coupled to a top side of the first semiconductor die, a top side of the second semiconductor die, and a top side of the first material.