Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.
1. A method for selectively forming n-type doped material on a surface of a substrate, the method comprising the steps of:
providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber;
depositing an n-type doped semiconductor material overlying the surface, wherein the n-type doped semiconductor material forms as doped monocrystalline material overlying the first area and as doped non-monocrystalline material overlying the second area; and
depositing a semiconductor material overlying the n-type doped semiconductor material, wherein the semiconductor material forms as monocrystalline material overlying the first area and as non-monocrystalline material overlying the second area.
2. The method of claim 1 , wherein the semiconductor material comprises intrinsically-doped semiconductor material.
3. The method of claim 1 , wherein any extrinsic dopant concentration in the semiconductor material is less than 1 at-%, or less than 0.0 tat-%.
4. The method of claim 1 , wherein the semiconductor material comprises a Group IV semiconductor.
5. The method of claim 1 , wherein the n-type doped semiconductor material comprises one or more Group V dopants.
6. The method of claim 5 , wherein the one or more Group V dopants are selected from the group consisting of phosphorus, arsenic, and antimony, or a mixture of two or more Group V dopants.
7. The method of claim 1 , wherein a concentration of one or more n-type dopants in the n-type doped semiconductor material is greater than 0.3 at-%, greater than 2 at-%, greater than 3 at-%, greater than 4 at-%, greater than 5 at-%, greater than 6 at-%, greater than 7 at-%, greater than 8 at-%, and/or less than 20 at-%, less than 15 at-%, or less than 10 at-%.
8. The method of claim 1 , wherein a temperature within the reaction chamber is less than 700° C., less than 600° C., less than 550° C., less than 525° C., less than 500° C., less than 475° C., or between about 400° C. and about 600° C.
9. The method of claim 1 , further comprising a step of etching the monocrystalline material overlying the first area and the non-monocrystalline material overlying the second area.
10. The method of claim 1 , further comprising a step of selectively removing the n-type doped semiconductor material in the second area.
11. The method of claim 1 , wherein the first material is monocrystalline.
12. The method of claim 1 , wherein the second material is non-monocrystalline.
13. The method of claim 1 , wherein the first material comprises semiconductor material.
14. The method of claim 1 , wherein the second material comprises dielectric material.
15. A method for selectively forming n-type doped material on a surface of a substrate, the method comprising the steps of:
providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber;
depositing an n-type doped semiconductor material overlying the surface, wherein the n-type doped semiconductor material forms as doped monocrystalline material overlying the first area and as doped non-monocrystalline material overlying the second area;
depositing a semiconductor material overlying the n-type doped semiconductor material, wherein the semiconductor material forms as monocrystalline material overlying the first area and as non-monocrystalline material overlying the second area; and
etching the monocrystalline material overlying the first area and the non-monocrystalline material overlying the second area.
16. The method according to claim 15 , wherein an etchant used during the step of etching comprises a halide.
17. The method according to claim 16 , wherein the halide is selected from one or more of Cl 2 , Br 2 , HCl, HBr, I 2 , and HF.
18. The method according to claim 15 , wherein a gas used during the step of etching comprises an etchant and a diluent.
19. The method according to claim 18 , wherein the diluent comprises one or more of nitrogen, argon, and helium.
20. A method for selectively forming n-type doped material on a surface of a substrate, the method comprising the steps of:
providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber;
depositing an n-type doped semiconductor material overlying the surface, wherein the n-type doped semiconductor material forms as doped monocrystalline material overlying the first area and as doped non-monocrystalline material overlying the second area;
depositing a semiconductor material overlying the n-type doped semiconductor material, wherein the semiconductor material forms as monocrystalline material overlying the first area and as non-monocrystalline material overlying the second area; and
selectively removing the n-type doped semiconductor material in the second area.
21. The method according to claim 20 , wherein an etchant used during the step of selectively removing comprises a halide.
22. The method according to claim 21 , wherein the halide is selected from one or more of Cl 2 , Br 2 , HCl, HBr, I 2 , and HF.
23. The method according to claim 20 , wherein a gas used during the step of selectively removing comprises an etchant and a diluent.
24. The method according to claim 23 , wherein the diluent comprises one or more of nitrogen, argon, and helium.