Electronic device
An electronic device, including a substrate, a transistor, a data line, a first transparent conductive layer, an insulating layer, and a metal layer, is provided. The transistor is disposed on the substrate. The data line is disposed on the substrate and electrically connected to the transistor. The first transparent conductive layer is disposed on the data line. The insulating layer is disposed on the first transparent conductive layer. The metal layer is disposed on the data line and overlapped with the data line. The electronic device of the disclosure may reduce an impedance of the transparent conductive layer, mitigate a problem of visual visibility caused by metal reflection, reduce a probability of light entering a semiconductor layer of the transistor, or increase an aperture ratio.
1. An electronic device, comprising:
a substrate;
a transistor disposed on the substrate;
a data line disposed on the substrate and electrically connected to the transistor;
a first transparent conductive layer disposed on the data line;
an insulating layer disposed on the first transparent conductive layer; and
a metal layer disposed on the data line and overlapped the data line,
wherein a material of the metal layer is a low-reflective metal material.
2. The electronic device as claimed in claim 1 , further comprising:
a second transparent conductive layer, disposed on the insulating layer, wherein the metal layer is located between the second transparent conductive layer and the first transparent conductive layer.
3. The electronic device as claimed in claim 2 , wherein the metal layer is electrically connected to the second transparent conductive layer or the metal layer is electrically connected to the first transparent conductive layer.
4. The electronic device as claimed in claim 2 , wherein the metal layer directly contacts the second transparent conductive layer or the metal layer directly contacts the first transparent conductive layer.
5. The electronic device as claimed in claim 1 , wherein the metal layer is overlapped with a part of the data line.
6. The electronic device as claimed in claim 1 , further comprising:
a scan line, disposed on the substrate and electrically connected to the transistor; and
a black matrix layer, disposed on the scan line and overlapped the scan line.
7. The electronic device as claimed in claim 6 , wherein the metal layer is overlapped the scan line.
8. The electronic device as claimed in claim 6 , wherein as measured in an extending direction of the scan line, a width of the metal layer is greater than a width of the data line.
9. The electronic device as claimed in claim 6 , wherein as measured in an extending direction of the scan line, a width of the metal layer is less than 3 μm.
10. The electronic device as claimed in claim 6 , wherein as measured in an extending direction of the data line, another width of the metal layer is greater than a width of the scan line, and a width of the black matrix layer is greater than the another width of the metal layer.
11. The electronic device as claimed in claim 6 , wherein as measured in an extending direction of the data line, a width of the black matrix layer is greater than a width of the scan line.
12. The electronic device as claimed in claim 6 , wherein the metal layer is disposed on the substrate, and the black matrix layer is disposed on the substrate.
13. The electronic device as claimed in claim 6 , further comprising:
another substrate, disposed opposite to the substrate; and
a plurality of color filter layers, disposed on the another substrate, wherein the metal layer is disposed corresponding to a boundary between two adjacent color filter layers.
14. The electronic device as claimed in claim 13 , wherein the metal layer is disposed on the another substrate.
15. The electronic device as claimed in claim 13 , wherein the metal layer is disposed on the substrate, and the black matrix layer is disposed on the another substrate.
16. The electronic device as claimed in claim 1 , wherein the first transparent conductive layer is disposed between the insulating layer and the transistor.
17. The electronic device as claimed in claim 1 , wherein as measured in a normal direction of the substrate, a thickness of the metal layer is less than 2000 angstroms.
18. The electronic device as claimed in claim 1 , further comprising:
a display area; and
a non-display area, disposed outside the display area, wherein the metal layer is disposed in the display area and the non-display area, and a signal of the non-display area is transmitted to the display area through the metal layer.
19. The electronic device as claimed in claim 18 , wherein the non-display area comprises a de-multiplexer circuits area, an electrostatic discharge circuits area, and a fanout area, and the metal layer is disposed in the de-multiplexer circuits area, the electrostatic discharge circuits area, and/or the fanout area.