RED MICRO-LED WITH DOPANTS IN ACTIVE REGION
A light source includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light. The active region includes a plurality of barrier layers and one or more quantum well layers. The plurality of barrier layers of the active region includes at least one n-doped barrier layer that includes an n-type dopant. The active region is characterized by a lateral linear dimension equal to or less than about 10 μm. The n-type dopant includes, for example, silicon, selenium, or tellurium.
1 . A light source comprising:
a p-type semiconductor layer;
an n-type semiconductor layer; and
an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit light, the active region including a plurality of barrier layers and one or more quantum well layers, wherein:
the plurality of barrier layers of the active region includes at least one n-doped barrier layer that includes an n-type dopant; and
the active region is characterized by a lateral linear dimension equal to or less than 10 μm.
2 . The light source of claim 1 , wherein the active region includes an AlInGaP, AlGaAs, or InGaAlAsP based material.
3 . The light source of claim 1 , wherein the n-type dopant includes silicon, selenium, or tellurium.
4 . The light source of claim 1 , wherein a concentration of the n-type dopant in the at least one n-doped barrier layer is between 1×10 17 /cm 3 and 5×10 18 /cm 3 .
5 . The light source of claim 1 , wherein the lateral linear dimension of the active region is equal to or less than 5 μm.
6 . The light source of claim 1 , wherein the active region is configured to emit light characterized by a wavelength equal to or greater than 590 nm.
7 . The light source of claim 1 , wherein the at least one n-doped barrier layer includes an n-doped barrier layer that physically contacts the p-type semiconductor layer.
8 . The light source of claim 1 , wherein the at least one n-dope barrier layer includes an undoped region between a doped region of the at least one n-doped barrier layer and a quantum well layer of the plurality of quantum well layers.
9 . The light source of claim 1 , wherein the at least one n-doped barrier layer includes a single n-doped barrier layer that physically contacts the p-type semiconductor layer.
10 . The light source of claim 1 , wherein the at least one n-doped barrier layer includes two or more n-doped barrier layers.
11 . The light source of claim 1 , wherein each of the plurality of barrier layers includes the n-type dopant.
12 . The light source of claim 1 , wherein the n-type dopant is introduced into the at least one n-doped barrier layer during epitaxial growth of the active region.
13 . The light source of claim 1 , wherein the p-type semiconductor layer is epitaxially grown on the active region.
14 . The light source of claim 1 , wherein the one or more quantum well layers of the active region include a single quantum well layer.
15 . The light source of claim 1 , wherein a current density of the light source to achieve a peak efficiency is greater than 10 A/cm 2 .
16 . A display device comprising a two-dimensional array of micro-LEDs, each micro-LED of the two-dimensional array of micro-LEDs comprising:
a p-type semiconductor layer;
an n-type semiconductor layer; and
an active region between the p-type semiconductor layer and the n-type semiconductor layer and configured to emit visible light, the active region including a plurality of barrier layers and one or more quantum well layers, wherein:
the plurality of barrier layers of the active region includes at least one n-doped barrier layer that includes an n-type dopant; and
the active region is characterized by a lateral linear dimension equal to or less than 10 μm.
17 . The display device of claim 16 , wherein the active region includes an AlInGaP, AlGaAs, or InGaAlAsP based material.
18 . The display device of claim 16 , wherein the n-type dopant includes silicon, selenium, or tellurium.
19 . The display device of claim 16 , wherein a concentration of the n-type dopant in the at least one n-doped barrier layer is between 1×10 17 /cm 3 and 5×10 18 /cm 3 .
20 . The display device of claim 16 , wherein the one or more quantum well layers of the active region include a single quantum well layer.