Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a semiconductor substrate;

a field-effect transistor arranged at least partially on the semiconductor substrate and used in an analog circuit, and having a P-type gate electrode;

an interlayer insulating film arranged on the field-effect transistor; and

a hydrogen shielding film arranged on the interlayer insulting film and covering the P-type gate electrode and configured to shield hydrogen, wherein the hydrogen shielding film comprises at least one of a metal film or a metallic film; and

a metal wiring arranged through the interlayer insulting film and electrically connecting at least the P-type gate electrode to the hydrogen shielding film.

2. The semiconductor device according to claim 1 , wherein an area of the hydrogen shielding film is greater than that of the P-type gate electrode in at least an active region of the field-effect transistor as the semiconductor substrate is viewed in a plan view.

3. The semiconductor device according to claim 1 , wherein a material of the hydrogen shielding film is an aluminum alloy.

4. The semiconductor device according to claim 2 , wherein a material of the hydrogen shielding film is an aluminum alloy.

5. The semiconductor device according to claim 1 , wherein the analog circuit is a reference voltage generating circuit.

6. The semiconductor device according to claim 2 , wherein the analog circuit is a reference voltage generating circuit.

7. The semiconductor device according to claim 3 , wherein the analog circuit is a reference voltage generating circuit.

8. The semiconductor device according to claim 4 , wherein the analog circuit is a reference voltage generating circuit.

9. The semiconductor device according to claim 5 , wherein the reference voltage generating circuit has a depletion type field-effect transistor configured to generate a constant current and an enhancement type field-effect transistor configured to generate a voltage, based on the constant current, and

wherein at least either of the depletion type field-effect transistor and the enhancement type field-effect transistor is a field-effect transistor having the P-type gate electrode.

10. The semiconductor device according to claim 6 , wherein the reference voltage generating circuit has a depletion type field-effect transistor configured to generate a constant current and an enhancement type field-effect transistor configured to generate a voltage, based on the constant current, and

wherein at least either of the depletion type field-effect transistor and the enhancement type field-effect transistor is a field-effect transistor having the P-type gate electrode.

11. The semiconductor device according to claim 7 , wherein the reference voltage generating circuit has a depletion type field-effect transistor configured to generate a constant current and an enhancement type field-effect transistor configured to generate a voltage, based on the constant current, and

wherein at least either of the depletion type field-effect transistor and the enhancement type field-effect transistor is a field-effect transistor having the P-type gate electrode.

12. The semiconductor device according to claim 8 , wherein the reference voltage generating circuit has a depletion type field-effect transistor configured to generate a constant current and an enhancement type field-effect transistor configured to generate a voltage, based on the constant current, and

wherein at least either of the depletion type field-effect transistor and the enhancement type field-effect transistor is a field-effect transistor having the P-type gate electrode.

13. The semiconductor device according to claim 1 , further including:

at least one additional field-effect transistor; and

a wide region hydrogen shielding film arranged above the hydrogen shielding film so as to cover the field-effect transistor and the at least one additional field-effect transistor as the semiconductor device is viewed in a plan view, wherein the wide region hydrogen shielding film comprises at least one of a metal film or a metallic film.

14. The semiconductor device according to claim 2 , further including:

at least one additional field-effect transistor; and

a wide region hydrogen shielding film arranged above the hydrogen shielding film so as to cover the field-effect transistor and the at least one additional field-effect transistor as the semiconductor device is viewed in a plan view, wherein the wide region hydrogen shielding film comprises at least one of a metal film or a metallic film.

15. The semiconductor device according to claim 3 , further including:

at least one additional field-effect transistor; and

a wide region hydrogen shielding film arranged above the hydrogen shielding film so as to cover the field-effect transistor and the at least one additional field-effect transistor as the semiconductor device is viewed in a plan view, wherein the wide region hydrogen shielding film comprises at least one of a metal film or a metallic film.

16. The semiconductor device according to claim 7 , further including:

at least one additional field-effect transistor; and

a wide region hydrogen shielding film arranged above the hydrogen shielding film so as to cover the field-effect transistor and the at least one additional field-effect transistor as the semiconductor device is viewed in a plan view, wherein the wide region hydrogen shielding film comprises at least one of a metal film or a metallic film.

17. The semiconductor device according to claim 1 , wherein a metal silicide film is formed above the P-type gate electrode.

18. The semiconductor device according to claim 2 , wherein a metal silicide film is formed above the P-type gate electrode.

19. The semiconductor device according to claim 3 , wherein a metal silicide film is formed above the P-type gate electrode.

20. A method of manufacturing a semiconductor device, comprising:

forming a field-effect transistor arranged at least partially on a semiconductor substrate and used in an analog circuit, and having a P-type gate electrode;

forming an interlayer insulating film on the field-effect transistor;

forming a metal wiring through the interlayer insulating film to electrically connect to at least the P-type gate electrode; and

forming a hydrogen shielding film shielding hydrogen on the interlayer insulting film and covering the P-type gate electrode and electrically connected to the metal wiring such that at least the P-type gate electrode is electrically connected to the hydrogen shielding film, wherein the hydrogen shielding film includes at least one of a metal film or a metallic film.