Magnetic memory device

1. A magnetic memory device, comprising:

a lower contact plug on a substrate; and

a data storage structure on the lower contact plug,

wherein the data storage structure comprises a bottom electrode, a magnetic tunnel junction pattern, and a top electrode that are sequentially stacked on the lower contact plug, and

wherein the lower contact plug and the data storage structure have a first thickness and a second thickness, respectively, in a first direction perpendicular to a top surface of the substrate,

wherein the first thickness of the lower contact plug is about 2.0 to 3.6 times the second thickness of the data storage structure.

2. The magnetic memory device of claim 1 , further comprising:

a lower line between the substrate and the lower contact plug, wherein the lower line connects the lower contact plug to a select element; and

an upper line on the data storage structure, wherein the upper line connects the data storage structure to a bit line.

3. The magnetic memory device of claim 2 , wherein:

a bottom surface of the lower contact plug is in contact with the lower line;

a top surface of the lower contact plug is in contact with the bottom electrode of the data storage structure; and

the first thickness is defined between the bottom surface of the lower contact plug and the top surface of the lower contact plug.

4. The magnetic memory device of claim 2 , wherein:

a bottom surface of the bottom electrode is in contact with the lower contact plug;

a top surface of the top electrode is in contact with the upper line;

the magnetic tunnel junction pattern is between the bottom electrode and the top electrode; and

the second thickness is defined between the bottom surface of the bottom electrode and the top surface of the top electrode.

5. The magnetic memory device of claim 2 , wherein the upper line extends onto a top surface of the top electrode, and onto a portion of a lateral surface of the top electrode.

6. The magnetic memory device of claim 2 , wherein the upper line has a third thickness in the first direction, and wherein the third thickness of the upper line is about 1.0 to 2.2 times the second thickness of the data storage structure.

7. The magnetic memory device of claim 6 , wherein:

a bottom surface of the upper line is in contact with the top electrode of the data storage structure; and

the third thickness is defined between the bottom surface of the upper line and a top surface of the upper line.

8. The magnetic memory device of claim 2 , further comprising:

a first lower interlayer dielectric layer on the substrate and covering the lower line;

a second lower interlayer dielectric layer on the first lower interlayer dielectric layer and covering the lower contact plug; and

a lower dielectric layer between the first and second lower interlayer dielectric layers,

wherein the data storage structure is on the second lower interlayer dielectric layer,

wherein the lower contact plug penetrates the second lower interlayer dielectric layer and the lower dielectric layer and contacts the lower line, and

wherein the second lower interlayer dielectric layer comprises a recess therein at a side of the data storage structure,

wherein a lowermost surface of the recess of the second lower interlayer dielectric layer is closer to the substrate than a top surface of the lower contact plug.

9. The magnetic memory device of claim 8 , wherein:

the substrate comprises a cell region and a peripheral circuit region;

the lower line, the lower contact plug, the data storage structure, and the upper line are on the cell region;

the first and second lower interlayer dielectric layers and the lower dielectric layer cover the cell region and the peripheral circuit region; and

a top surface of the second lower interlayer dielectric layer on the peripheral circuit region is closer to the substrate than the lowermost surface of the recess of the second lower interlayer dielectric layer on the cell region.

10. The magnetic memory device of claim 9 , further comprising:

a first upper interlayer dielectric layer on the second lower interlayer dielectric layer and covering the data storage structure;

a second upper interlayer dielectric layer on the first upper interlayer dielectric layer and covering the upper line; and

an upper dielectric layer between the first and second upper interlayer dielectric layers,

wherein the upper line penetrates the second upper interlayer dielectric layer and the upper dielectric layer and contacts the data storage structure,

wherein the first and second upper interlayer dielectric layers and the upper dielectric layer cover the cell region and the peripheral circuit region, and

wherein a first top surface of the upper dielectric layer on the peripheral circuit region is closer to the substrate than a second top surface of the upper dielectric layer on the cell region.

11. The magnetic memory device of claim 10 , further comprising:

a protective dielectric layer that is between the first upper interlayer dielectric layer and a lateral surface of the data storage structure, and is between the first upper interlayer dielectric layer and the recess of the second lower interlayer dielectric layer on the cell region,

wherein the protective dielectric layer further extends between the second lower interlayer dielectric layer and the first upper interlayer dielectric layer on the peripheral circuit region.

12. A magnetic memory device, comprising:

a lower contact plug connected to a select element on a substrate; and

a data storage structure comprising a magnetic tunnel junction pattern on the lower contact plug,

wherein a first thickness of the lower contact plug is about 2.0 to 3.6 times a second thickness of the data storage structure in a first direction perpendicular to a top surface of the substrate, and

wherein, a middle portion of the magnetic tunnel junction pattern is wider than an upper portion and a lower portion of the magnetic tunnel junction pattern in a second direction parallel to the top surface of the substrate.