Pixelated light-emitting diode for self-aligned photoresist patterning
A light source includes an array of light emitters, with at least some light emitters having a central patterned surface and an unpatterned border; a light blocking metal layer positioned between each of the array of light emitters; and down-converter material positioned on each of the array of light emitters.
1. A light source, comprising:
an array comprising:
a plurality of light emitters, each light emitter comprising:
a semiconductor layer having a first surface and a second surface,
the first surfaces of at least a portion of the light emitters comprising:
a central patterned surface and an unpatterned border having a width in a range of 1 to 50 microns, and
a down-converter material on the semiconductor layer; and
a light blocking metal layer positioned between each of the light emitters.
2. The light source of claim 1 , wherein there is a presence of the down-converter material on the central pattered surface, and an absence of the down-converter material on at least portions of the unpatterned border.
3. The light source of claim 1 , wherein each of the light emitters comprises a minimum width in a range of 5 microns to 500 microns.
4. The light source of claim 1 , wherein the semiconductor layer comprises GaN and the down-converter material comprises a phosphor material.
5. The light source of claim 1 , wherein the light blocking metal layer has a height of less than 5 microns.
6. The light source of claim 1 , wherein the array provides multicolor lighting with phosphors formed from particles bound together by a condensation cure silicone system.
7. The light source of claim 1 , wherein the plurality of light emitters is color tunable.
8. The light source of claim 1 , further comprising optical elements that are aligned with at least some of the light emitters.
9. The light source of claim 1 , wherein the light source is used for at least one of architectural, camera flash, and automotive lighting.
10. A method of manufacturing a light source by a self-aligned maskless method comprising:
coating an array of light emitters with a positive photoresist;
activating at least some of the light emitters to expose portions of the positive photoresist and create developed positive photoresist, each light emitter comprising: a semiconductor layer having a first surface and a second surface, the first surfaces of at least a portion of the light emitters comprising: a central patterned surface and an unpatterned border having a width in a range of 1 to 50 microns;
washing away the developed positive photoresist to leave cavities having positive photoresist sidewalls; and
at least partially filling the cavities with a down-converter material.
11. The method of claim 10 , wherein each of the light emitters comprises a minimum width in a range of 5 microns to 500 microns.
12. The method of claim 10 , wherein the semiconductor layer each of the light emitters comprises GaN.
13. The method of claim 10 , further comprising depositing a light blocking metal layer having a height of less than 5 microns between each of the light emitters.
14. The method of claim 10 , further comprising depositing and washing away a second positive photoresist layer.
15. The method of claim 10 , further comprising providing electrical contacts on a reverse side of a wafer supporting the array of light emitters.
16. The method of claim 10 , further comprising activating each of the array of light emitters.
17. The method of claim 10 , further comprising activating selected light emitters to define a desired pattern.
18. The method of claim 10 , further comprising aligning optical elements with at least some of the array of light emitters.