IP Library Granted Patent US 11,538,971
Granted Patent B2
US 11,538,971 · App. 17/085,368 · Granted Dec 27, 2022

Light source

Inventor: Noritaka Tanabe (Osaka, JP)
Assignee: FUNAI ELECTRIC CO., LTD.
H01L33/60G02B6/0045G02F1/133553G02F1/133603G02F1/133605H01L33/46H01L33/54H05B33/04H05B33/10H01L25/0753H01L33/22H01L33/508
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Quick Facts
Patent No.
US 11,538,971
App. No.
17/085,368
Granted
Dec 27, 2022
Kind
B2
Abstract

A light source includes a semiconductor element with a substrate, a translucent sealing resin that covers the semiconductor element, and a reflective layer that is disposed on an upper face of the sealing resin.

Claims (48)

1. A light source comprising:

a semiconductor element with a substrate;

a translucent sealing resin that covers the semiconductor element;

a reflective layer that is disposed on an upper face of the sealing resin; and

a phosphor layer that is disposed between the sealing resin and the semiconductor element, the phosphor layer being disposed on side faces of the semiconductor element such that the phosphor layer surrounds an outer periphery of the semiconductor element that is defined by the side faces of the semiconductor element.

2. The light source according to claim 1 , wherein

the reflective layer has an outer periphery that is disposed further outside than the outer periphery of the semiconductor element as viewed in a direction perpendicular to an upper face of the light source.

3. The light source according to claim 1 , wherein

the substrate is disposed at a top of the semiconductor element, and

an upper face of the substrate and a lower face of the reflective layer are separated by the sealing resin.

4. The light source according to claim 1 , wherein

the reflective layer includes a specific pattern that transmits part of light from the semiconductor element.

5. The light source according to claim 4 , wherein

the specific pattern has a lattice-shape or has a shape in which rectangles are arranged in a specific direction.

6. A light source comprising:

a semiconductor element with a substrate;

a translucent sealing resin that covers the semiconductor element;

a reflective layer that is disposed on an upper face of the sealing resin; and

a phosphor layer that is disposed between the sealing resin and the semiconductor element,

the phosphor layer being disposed on side faces of the semiconductor element, and overlapping the reflective layer as viewed in a direction perpendicular to an upper face of the light source, and

the sealing resin and an upper face of the semiconductor element closely contacting with each other.

7. The light source according to claim 1 , wherein

the sealing resin and the side faces of the semiconductor element closely contact with each other.

8. The light source according to claim 1 , wherein

the reflective layer is formed substantially flat.

9. The light source according to claim 1 , wherein

the substrate is made of a sapphire substrate, and

the semiconductor element includes the sapphire substrate, a first conductivity type GaN layer, a light emitting layer and a second conductivity type GaN layer that are arranged in this order starting from an upper face side of the sealing resin.

10. The light source according to claim 1 , wherein

the reflective layer has an outer periphery that substantially overlaps with an outer periphery of the sealing resin as viewed in a direction perpendicular to an upper face of the light source.

11. The light source according to claim 1 , wherein

the reflective layer has an upper face that forms an uppermost face of the light source.

12. The light source according to claim 1 , wherein

the substrate has an uneven upper face.

13. The light source according to claim 1 , wherein

the sealing resin entirely covers the semiconductor element and the phosphor layer.

14. The light source according to claim 1 , wherein

the upper face of the sealing resin exposes outside through a gap in the reflective layer.

15. The light source according to claim 1 , wherein

the reflective layer covers an entirety of the upper face of the sealing resin.

16. The light source comprising:

a semiconductor element with a substrate;

a translucent sealing resin that covers the semiconductor element; and

a reflective layer that is disposed on an upper face of the sealing resin, the reflective layer covering an entirety of the upper face of the sealing resin such that the upper face of the sealing resin does not expose outside,

the sealing resin having an outer periphery that surrounds the sealing resin and forms an outer periphery of the light source, an entirety of the outer periphery of the sealing resin exposing outside of the light source.

17. A backlight unit comprising:

the light source according to claim 1 ; and

a reflective sheet that reflects light from the light source.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2025
From: FUNAI GROUP CO., LTD
To: FUNAI ELECTRIC CO., LTD.
Reel/Frame 073121/0824 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2025
From: FUNAI ELECTRIC CO., LTD. (F/K/A FE-TECH CO., LTD.)
To: FEC IP LLC
Reel/Frame 073121/0883 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 30, 2020
From: TANABE, NORITAKA
To: FUNAI ELECTRIC CO., LTD.
Reel/Frame 054225/0417 →