Semiconductor device and semiconductor component including ihe same
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.
1. A semiconductor device, comprising:
a first semiconductor structure comprising a first dopant;
a second semiconductor structure located on the first semiconductor structure and comprising a second dopant different from the first dopant; and
an active region comprising a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure wherein one of the plurality of semiconductor pairs has a barrier layer and a well layer and comprises the first dopant,
wherein the first semiconductor structure further comprises a first confinement layer physically contacts the active region, and the first confinement layer has a third Al content and a third thickness, the second semiconductor structure further comprises a second confinement layer physically contacts the active region, and the second confinement layer has a fourth Al content and a fourth thickness, wherein the third Al content is greater than the second Al content and the fourth Al content is greater than the second Al content; wherein the third thickness is greater than or equal to the second thickness and the fourth thickness is greater than or equal to the second thickness: and
wherein the barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, wherein the second thickness is less than the first thickness, and the second Al content is less than the first Al content.
2. The semiconductor device of claim 1 , wherein the semiconductor device has a rectangular shape in a top view and the rectangle has a length and a width that are respectively less than or equal to 500 μm and greater than 1 μm.
3. The semiconductor device of claim 1 , wherein the first Al content is 25% or more.
4. The semiconductor device of claim 1 , wherein a ratio of the first thickness to the second thickness is in a range of 2:1 to 40:1.
5. The semiconductor device of claim 1 , wherein the number of the semiconductor pairs is less than or equal to 10.
6. The semiconductor device of claim 1 , wherein the first dopant comprises a group II element, a group IV element, or a group VI element of the periodic table.
7. The semiconductor device of claim 1 , wherein the first dopant has a doping concentration greater than or equal to 1×10 16 /cm 3 in the active region.