Semiconductor device and method of forming insulating layers around semiconductor die

1. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a contact pad formed over a first surface of the semiconductor wafer;

forming a trench into the first surface of the semiconductor wafer;

disposing an insulating material over the first surface of the semiconductor wafer and into the trench, wherein the insulating material covers the contact pad;

grinding the insulating material over the first surface of the semiconductor wafer to expose the contact pad;

backgrinding a second surface of the semiconductor wafer opposite the first surface to expose the insulating material in the trench;

forming an insulating layer over the second surface of the semiconductor wafer after backgrinding, wherein the insulating layer includes an adhesive tape; and

dicing the semiconductor wafer through the trench and insulating layer.

2. The method of claim 1 , further including forming a nickel plating over the contact pad prior to disposing the insulating material.

3. The method of claim 2 , wherein grinding the insulating material exposes the nickel plating.

4. The method of claim 1 , further including forming a conductive layer over the contact pad after depositing the insulating material.

5. The method of claim 1 , wherein the contact pad comprises copper.

6. The method of claim 1 , further including laminating the insulating layer over the second surface of the semiconductor wafer.

7. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a contact pad formed over a first surface of the semiconductor wafer;

forming a trench into the first surface of the semiconductor wafer;

disposing an insulating material over the first surface of the semiconductor wafer and into the trench, wherein the insulating material covers the contact pad;

grinding the insulating material over the first surface of the semiconductor wafer to expose the contact pad; and

forming a conductive layer over the contact pad after grinding the insulating material, wherein a discrete portion of the conductive layer is limited to within a footprint of the contact pad.

8. The method of claim 7 , further including forming a nickel plating over the contact pad prior to disposing the insulating material.

9. The method of claim 8 , wherein grinding the insulating material exposes the nickel plating.

10. The method of claim 7 , wherein the contact pad comprises copper.

11. The method of claim 7 , further including:

backgrinding a second surface of the semiconductor wafer opposite the first surface to expose the insulating material in the trench; and

laminating an insulating layer over the second surface of the semiconductor wafer after backgrinding.

12. The method of claim 11 , wherein the insulating layer contacts the insulating material.

13. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a contact pad;

forming a trench into the semiconductor wafer;

disposing an insulating material over the semiconductor wafer and into the trench;

grinding the insulating material to expose the contact pad;

forming a conductive layer over the contact pad after grinding the insulating material;

forming an insulating layer to cover an entire footprint of the semiconductor wafer opposite the contact pad; and

singulating the semiconductor wafer through the insulating material and insulating layer.

14. The method of claim 13 , wherein the contact pad includes a flat upper surface and a nickel plating formed over the flat upper surface prior to disposing the insulating material over the semiconductor wafer.

15. The method of claim 14 , wherein the nickel plating of the contact pad is exposed from the insulating material by the grinding step.

16. The method of claim 15 , wherein the insulating material includes a planar section extending from the contact pad to over the trench after the grinding step.

17. The method of claim 13 , further including:

removing a portion of the semiconductor wafer opposite the contact pad to expose the insulating material in the trench; and

dicing the semiconductor wafer through the insulating material in the trench.

18. The method of claim 17 , further including forming the insulating layer over the semiconductor wafer opposite the contact pad after removing the portion of the semiconductor wafer and before dicing the semiconductor wafer.

19. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a contact pad;

forming a trench into the semiconductor wafer;

disposing an insulating material over the semiconductor wafer and into the trench with the contact pad exposed from the insulating material;

backgrinding the semiconductor wafer to expose the insulating material in the trench and form a back surface of the semiconductor wafer;

forming an insulating layer over and completely covering the back surface of the semiconductor wafer; and

singulating the semiconductor wafer through the insulating material and insulating layer.

20. The method of claim 19 , wherein the surface of the insulating material includes a planar section extending from the contact pad to over the trench.

21. The method of claim 19 , wherein the contact pad includes a nickel plating.

22. The method of claim 19 , further including forming a conductive layer over the contact pad.

23. The method of claim 19 , further including disposing a solder bump directly over the contact pad.

24. The method of claim 1 , wherein the adhesive tape is an LC type backside coating adhesive tape.