Composition for etching and method for manufacturing semiconductor device using same
View Patent ↗A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.
1. A semiconductor element comprising:
a cell gate structure formed on a substrate on which a plurality of interlayer insulating layers and a plurality of gate electrode layers are alternatively stacked, wherein the cell gate structure formed by selectively etching a plurality of nitride layers by a composition for the selective etching,
wherein the composition for etching comprises:
a first inorganic acid,
a first additive, being any one selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof,
a second additive comprising a silane inorganic acid salt produced by reaction between a nitric acid and a second silane compound; and
a solvent,
wherein:
the silane compound is a compound selected from Chemical Formulas 10, 20, and their combination,
the silane inorganic acid salt is represented by Chemical Formula C260-1,
wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 20% by weight, and the solvent as the balance,
(In Chemical Formula 10 and Chemical Formula 20, each R 1 to R 10 is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least one of R 1 to R 4 is hydrogen, or an alkoxy group having 1 to 10 carbon atoms, and n is one of integer numbers from 1 to 10),
(In Chemical Formula C260-1, each R 111 to R 112 is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, each R 113 to R 114 is independently hydrogen, n 4 is one of integer numbers from 0 to 2, l 1 is one of integer numbers from 0 to 10, m 1 is 0 or 1).
2. The semiconductor element of claim 1 , wherein any one of hydrogen of R 113 to R 114 in the Chemical Formula C260-1 is substituted by Chemical Formula C280-1,
(In Chemical Formula C280-1, any one of R 131 to R 132 is a coupler coupling to Chemical Formula C260-1, the other is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, and each R 113 to R 115 is independently hydrogen atom, or substituted by a substituent represented by Chemical Formula C280-1, n 4 is one of integer numbers from 0 to 2, l 1 is one of integer numbers from 0 to 10, m 1 is 0 or 1).
3. The semiconductor element of claim 1 , wherein the silane inorganic acid salt represented by Chemical Formula C260-1 is any one selected from the group consisting of Chemical Formulas 72, 73, 77, 264 and their combination,
(In Chemical Formulas 72, 73, 77, and 264, each R 1-1 , R 1-2 , R 1-3 , R 1-4 , R 21 , and R 23 is independently selected from the group consisting of hydrogen atom, halogen atom, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms).
4. A semiconductor element comprising:
a cell gate structure formed on a substrate on which a plurality of interlayer insulating layers and a plurality of gate electrode layers are alternatively stacked, wherein the cell gate structure formed by selectively etching a plurality of nitride layers by a composition for the selective etching,
wherein the composition for etching comprises:
a first inorganic acid,
a first additive, being any one selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof,
a second additive comprising a compound represented by Chemical Formulas 300, 350, and their combination,
a solvent,
wherein the composition for etching comprises the first additive at a proportion of 0.01% to 15% by weight, the first inorganic acid at a proportion of 70% to 99% by weight, the second additive at a proportion of 0.01% to 20% by weight, and the solvent as the balance,
(In Chemical Formula 300, each R 1 to R 4 is independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, and two or three of each R 1 to R 4 is independently a hydroxy group, at least one of R 1 to R 4 is an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms),
(In Chemical Formula 350, each R 2 to R 5 is independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alky group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, at least any one of R 2 to R 5 is an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, or an aminoalkoxy group having 1 to 10 carbon atoms, n is an integer from 1 to 4).