Integrated circuit devices including a vertical field-effect transistor and methods of forming the same
Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a first active region including a first vertical field effect transistor (VFET), a second active region including a second VFET, and a diffusion break between the first active region and the second active region on a substrate. The diffusion break may include first and second isolation layers in the substrate and a diffusion break channel region protruding from a portion of the substrate. The portion of the substrate may be between the first isolation layer and the second isolation layer. In some embodiments, the first and second isolation layers may be adjacent to respective opposing sidewalls of the diffusion break channel region.
1. An integrated circuit device comprising:
a first active region and a second active region on a substrate, the first active region comprising a first vertical field effect transistor (VFET) and the second active region comprising a second VFET, wherein the first VFET comprises a first channel region protruding from the substrate and a first top source/drain region on the first channel region;
a diffusion break between the first active region and the second active region,
wherein the diffusion break comprises:
a first isolation layer and a second isolation layer in the substrate; and
a diffusion break channel region protruding from a portion of the substrate, wherein the portion of the substrate is between the first isolation layer and the second isolation layer,
wherein an upper surface of the diffusion break channel region is devoid of a top source/drain region, and
the diffusion break channel region comprises a semiconductor material.
2. The integrated circuit device of claim 1 ,
wherein the integrated circuit device further comprises an insulating layer on the diffusion break channel region, and the insulating layer contacts an entirety of the upper surface of the diffusion break channel region.
3. The integrated circuit device of claim 1 , wherein the first VFET comprises two first VFETs that comprise the first channel region and a second channel region, respectively, and
the first and second channel regions are spaced apart from each other by a first distance, and the first channel region and the diffusion break channel region are spaced apart from each other by a second distance that is equal to the first distance.
4. The integrated circuit device of claim 3 , wherein upper surfaces of the first and second channel regions are coplanar with the upper surface of the diffusion break channel region.
5. The integrated circuit device of claim 1 , wherein the first isolation layer contacts at least a portion of a sidewall of the first active region.
6. The integrated circuit device of claim 1 , wherein
the first isolation layer comprises an upper surface having a width that is not greater than a distance between the first channel region and the diffusion break channel region.
7. The integrated circuit device of claim 1 , wherein the first isolation layer contacts at least a portion of a sidewall of the first active region, and
the first channel region and the diffusion break channel region define a first gap therebetween, and a first center of the first gap is offset toward the first channel region from a second center of an upper surface of the first isolation layer.
8. The integrated circuit device of claim 1 , wherein
the first channel region and the diffusion break channel region have an equal width.
9. The integrated circuit device of claim 1 , wherein the diffusion break channel region comprises a first diffusion break channel region and a second diffusion break channel region that protrude from the substrate, and
the first and second diffusion break channel regions are between the first isolation layer and the second isolation layer in a plan view.
10. The integrated circuit device of claim 9 , further comprising a third isolation layer that is between the first and second diffusion break channel regions in the plan view.
11. The integrated circuit device of claim 1 , further comprising a first bottom source/drain region in the first active region, and a diffusion break bottom source/drain region in the portion of the substrate,
wherein opposing sidewalls of the first isolation layer contact the first bottom source/drain region and the diffusion break bottom source/drain region, respectively, and
the first bottom source/drain region is bigger than the diffusion break bottom source/drain region.
12. The integrated circuit device of claim 1 , wherein the first isolation layer contacts at least a portion of a sidewall of the first active region, and the second isolation layer contacts at least a portion of a sidewall of the second active region, and
the first isolation layer and the second isolation layer are spaced apart from the diffusion break channel region.
13. An integrated circuit device comprising:
a first active region and a second active region that are on a substrate and are spaced apart from each other in a first direction, the first active region comprising a first vertical field effect transistor (VFET) and the second active region comprising a second VFET;
a dummy region that is on the substrate between the first and second active regions;
a first isolation layer that is in the substrate between the first active region and the dummy region;
a dummy channel region protruding from the dummy region; and
a second isolation layer that is in the substrate between the second active region and the dummy region,
wherein the first VFET comprises a first channel region protruding from the first active region, and opposing sidewalls of the first isolation layer contact a sidewall of the first active region and a sidewall of the dummy region, respectively,
the dummy channel region comprises a semiconductor material, and
the first channel region and the dummy channel region define a first gap therebetween, and a first center of the first gap is offset toward the first channel region from a second center of an upper surface of the first isolation layer.
14. The integrated circuit device of claim 13 , wherein the first VFET further comprises a first top source/drain region that is on the first channel region and has a first width in the first direction, and
the integrated circuit device further comprises a dummy top source/drain region that is on the dummy channel region and has a second width in the first direction, and the second width is at most 0.8 times the first width.
15. The integrated circuit device of claim 13 , wherein the first VFET comprises two first VFETs that comprise the first channel region and a second channel region, respectively, and
the first and second channel regions are spaced apart from each other by a first distance, and the first channel region and the dummy channel region are spaced apart from each other by a second distance that is equal to the first distance.
16. The integrated circuit device of claim 13 , wherein
the upper surface of the first isolation layer has a width that is not greater than a distance between the first channel region and the dummy channel region.
17. The integrated circuit device of claim 13 , wherein the second isolation layer contacts a sidewall of the second active region.
18. The integrated circuit device of claim 13 , further comprising a first bottom source/drain region in the first active region, and a dummy bottom source/drain region in the dummy region,
wherein the opposing sidewalls of the first isolation layer contact the first bottom source/drain region and the dummy bottom source/drain region, respectively, and
the first bottom source/drain region is bigger than the dummy bottom source/drain region.
19. The integrated circuit device of claim 13 , wherein the first isolation layer and the second isolation layer are spaced apart from the dummy channel region.