Transversely-excited bulk acoustic resonator split ladder filter
Filter devices. A first chip includes a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base. A second chip includes a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base. A circuit card coupled to the first chip and the second chip includes at least one conductor for making an electrical connection between the first IDT and the second IDT.
1. A filter device, comprising:
a first chip comprising:
a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base;
a second chip comprising:
a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between the first IDT and the second IDT, wherein
a thickness of the interleaved fingers of the first IDT is different from a thickness of the interleaved fingers of the second IDT.
2. The filter device of claim 1 , wherein
the first piezoelectric wafer and the second piezoelectric wafer comprise one of lithium niobate and lithium tantalate.
3. A filter device, comprising:
a first chip comprising:
a first piezoelectric wafer having a first thickness, a back surface of the first piezoelectric wafer attached to a first base, and
a first conductor pattern formed on a front surface of the first piezoelectric wafer, the first conductor pattern including interdigital transducers (IDTs) of one or more first acoustic resonators, interleaved IDT fingers of each of the IDTs of the one or more first acoustic resonators disposed on respective diaphragms suspended over respective cavities formed in the first base;
a second chip comprising:
a second piezoelectric wafer having a second thickness less than the first thickness, a back surface of the second piezoelectric wafer attached to a second base, and
a second conductor pattern formed on a front surface of the second piezoelectric wafer, the second conductor pattern including interdigital transducers (IDTs) of one or more second acoustic resonators, interleaved IDT fingers of each of the one or more second acoustic resonators disposed on respective diaphragms suspended over respective cavities formed in the second base; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between one of the one or more first acoustic resonators and one of the one or more second acoustic resonators, wherein
an orientation of crystalline axes of the first piezoelectric wafer is different from an orientation of crystalline axes of the second piezoelectric wafer.
4. A filter device, comprising:
a first chip comprising:
a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base;
a second chip comprising:
a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between the first IDT and the second IDT, wherein
an orientation of crystalline axes of the first piezoelectric wafer is different from an orientation of crystalline axes of the second piezoelectric wafer.
5. A filter device, comprising:
a first chip comprising:
a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base;
a second chip comprising:
a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between the first IDT and the second IDT, wherein
the first chip, the second chip, and the circuit card collectively form a ladder filter circuit.
6. The filter device of claim 5 , wherein
the first acoustic resonator is a shunt resonator in the ladder filter circuit, and
the second acoustic resonator is a series resonator in the ladder filter circuit.
7. The filter device of claim 6 , wherein
the first chip comprises one or more additional shunt resonators of the ladder filter circuit, and
the second chip comprised one or more additional series resonators of the ladder filter circuit.
8. A filter device, comprising:
a first chip comprising:
a first piezoelectric wafer having a first thickness, a back surface of the first piezoelectric wafer attached to a first base, and
a first conductor pattern formed on a front surface of the first piezoelectric wafer, the first conductor pattern including interdigital transducers (IDTs) of one or more first acoustic resonators, interleaved IDT fingers of each of the IDTs of the one or more first acoustic resonators disposed on respective diaphragms suspended over respective cavities formed in the first base;
a second chip comprising:
a second piezoelectric wafer having a second thickness less than the first thickness, a back surface of the second piezoelectric wafer attached to a second base, and
a second conductor pattern formed on a front surface of the second piezoelectric wafer, the second conductor pattern including interdigital transducers (IDTs) of one or more second acoustic resonators, interleaved IDT fingers of each of the one or more second acoustic resonators disposed on respective diaphragms suspended over respective cavities formed in the second base; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between one of the one or more first acoustic resonators and one of the one or more second acoustic resonators, wherein
a thickness of the first conductor pattern is different from a thickness of the second conductor pattern.
9. The filter device of claim 8 , wherein
the first piezoelectric wafer and the second piezoelectric wafer comprise one of lithium niobate and lithium tantalate.
10. A filter device, comprising:
a first chip comprising:
a first piezoelectric wafer having a first thickness, a back surface of the first piezoelectric wafer attached to a first base, and
a first conductor pattern formed on a front surface of the first piezoelectric wafer, the first conductor pattern including interdigital transducers (IDTs) of one or more first acoustic resonators, interleaved IDT fingers of each of the IDTs of the one or more first acoustic resonators disposed on respective diaphragms suspended over respective cavities formed in the first base;
a second chip comprising:
a second piezoelectric wafer having a second thickness less than the first thickness, a back surface of the second piezoelectric wafer attached to a second base, and
a second conductor pattern formed on a front surface of the second piezoelectric wafer, the second conductor pattern including interdigital transducers (IDTs) of one or more second acoustic resonators, interleaved IDT fingers of each of the one or more second acoustic resonators disposed on respective diaphragms suspended over respective cavities formed in the second base; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between one of the one or more first acoustic resonators and one of the one or more second acoustic resonators, wherein
the first chip, the second chip, and the circuit card collectively form a ladder filter circuit.
11. The filter device of claim 10 , wherein
the one or more first acoustic resonators are shunt resonators in the ladder filter circuit, and
the one or more second acoustic resonators are series resonators in the ladder filter circuit.
12. The filter device of claim 11 , wherein
the first chip comprises all of the shunt resonators in the ladder filter circuit, and
the second chip comprises all of the series resonators in the ladder filter circuit.
13. A filter device, comprising:
a first chip comprising a first floating diaphragm resonator, the first floating diaphragm resonator comprising:
a first diaphragm of single-crystal piezoelectric material floating over a first cavity in a first base, and
a first interdigital transducer (IDT), interleaved fingers of the first IDT disposed on the first diaphragm;
a second chip comprising a second floating diaphragm resonator, the second floating diaphragm resonator comprising:
a second diaphragm of single-crystal piezoelectric material floating over a second cavity in a second base, and
a second IDT, interleaved fingers of the second IDT disposed on the second diaphragm; and
a circuit card coupled to the first chip and the second chip, the circuit card comprising at least one conductor for making an electrical connection between the first floating diaphragm resonator and the second floating diaphragm resonator, wherein
a thickness of the first diaphragm is greater than a thickness of the second diaphragm.
14. The filter device of claim 13 , wherein
the first diaphragm and the second diaphragm comprise one of lithium niobate and lithium tantalate.
15. The filter device of claim 13 , wherein
a thickness of the interleaved fingers of the first IDT is different from a thickness of the interleaved fingers of the second IDT.
16. The filter device of claim 13 , wherein
an orientation of crystalline axes of the first diaphragm is different from an orientation of crystalline axes of the second diaphragm.
17. The filter device of claim 13 , wherein
the first chip, the second chip, and the circuit card collectively form a ladder filter circuit.
18. The filter device of claim 17 , wherein
the first floating diaphragm resonator is a shunt resonator in the ladder filter circuit, and
the second floating diaphragm resonator is a series resonator in the ladder filter circuit.
19. The filter device of claim 17 , wherein
the first chip comprises all shunt resonators of the ladder filter circuit, and
the second chip comprises all series resonators of the ladder filter circuit.