POLISHING COMPOSITION CONTAINING ZIRCONIA PARTICLES AND AN OXIDIZER
Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.
1 . A method of increasing the removal rate of amorphous carbon, spin-on carbon (SoC), or diamond like carbon (DLC) from a surface, comprising contacting the surface with a slurry comprising an abrasive having zirconia particles and a metal-containing oxidizer, and polishing the surface.
2 . The method of claim 1 , wherein the removal rate is increased when compared to a removal rate using a similar slurry composition having silica and/or a non-metal-containing oxidizer in place of zirconia particles and/or the metal-containing oxidizer.
3 . The method of claim 1 , wherein the zirconia particle is an aggregate comprising primary particles.
4 . The method of claim 3 , wherein the zirconia particle comprises a primary particle size with a diameter of about 8-10 nm and a secondary size of the aggregates with a diameter of about 70 nm.
5 . The method of claim 1 , the metal-containing oxidizer comprises an element selected from the group consisting of manganese, cerium, vanadium, and iron.
6 . The method of claim 1 , wherein the metal-containing oxidizer is selected from the group consisting of KMnO 4 , (NH 4 ) 2 Ce(NO 3 ) 6 , NaVO 3 , NH 4 VO 3 , and Fe(NO 3 ) 3 .
7 . The method of claim 1 , wherein the composition has a pH of about 3 to about 6.
8 . The method of claim 1 , wherein the zirconia particles are present in an amount of about 0.01 wt. % or more.
9 . The method of claim 1 , wherein the zirconia particles are present in an amount of about 2.5 wt. % of less.
10 . The method of claim 1 , wherein the metal-containing oxidizer is present in an amount of about 0.05 mM or more.
11 . The method of claim 1 , wherein the zirconia particles comprise colloidal zirconia.
12 . The method of claim 1 , wherein the zirconia particles comprise calcined zirconia.
13 . The method of claim 1 , wherein the zirconia particles are doped with yttrium.
14 . The method of claim 13 , zirconia particle is doped with greater than 9 mol % Y 2 O 3 .
15 . A chemical mechanical polishing (CMP) composition comprising colloidal zirconia particles and a metal-containing oxidizer.
16 . The CMP composition of claim 15 , wherein the colloidal zirconia particle is an aggregate comprising primary particles.
17 . The CMP composition of claim 16 , wherein the colloidal zirconia particle comprises a primary particle size with a diameter of about 8 to about 10 nm and a secondary size of the aggregates with a diameter of about 70 nm.
18 . The CMP composition of claim 15 , wherein the metal-containing oxidizer comprises an element selected from the group consisting of manganese, cerium, vanadium, and iron.
19 . The CMP composition of claim 15 , wherein the metal-containing oxidizer is selected from the group consisting of KMnO 4 , (NH 4 ) 2 Ce(NO 3 ) 6 , NaVO 3 , NH 4 VO 3 , and Fe(NO 3 ) 3 .
20 . The CMP composition of claim 15 , wherein the composition has a pH of about 3 to about 6.
21 . The CMP composition of claim 15 , wherein the zirconia particles are present in an amount of about 0.01 wt. % or more.
22 . A reaction product formed by contacting the CMP composition of claim 15 with an amorphous carbon, spin-on carbon (SoC), or DLC surface.
23 . A chemical mechanical polishing (CMP) composition comprising zirconia particles doped with yttrium and a metal-containing oxidizer, wherein the particle size of the particles is less than 80 nm.
24 . The CMP composition of claim 23 , wherein the zirconia particles are doped with greater than 9 mol % Y 2 O 3 .